1/19/2022 | 8542326100 | MICROCIRCUITS - MEMORY DEVICES ELECTRICALLY ERASABLE FULLY REPROGRAMMABLE PERMANENT STORAGE DEVICES MRAM BASED ON A MATRIX STRUCTURE, WITH A MEMORY CAPACITY OF 1 Mbit FOR USE IN PERSONAL COMPUTERS. | 1.11 | 9743.1 | China | MOSCOW RUSSIA | SIBELKOM LOGISTIC LLC |
1/29/2022 | 8542326100 | Flash Es PPZ with memory capacity no more than 512 mibite: electrically erasable rewritable constant flash device in the form of an integral chip, memory capacity 0.064Mbits, voltage 2.7-3.5B art: MB85RS64PNF-G-JNERE1 - 3000 pcs | 1.5 | 1522.1 | Japan | MOSCOW RUSSIA | DIDZHIKOM LLC |
1/9/2022 | 8542326100 | INTEGRAL CIRCUIT OF ELECTRICALLY ERASSABLE REPROGRAMMABLE PERMANENT MEMORY DEVICE (EEPROM) WITH MEMORY CAPACITY NOT MORE THAN 512 Mbit. | 0.06 | 1724.79 | Thailand | ST PETERSBURG RUSSIA | GAMMA ENGINEERING LLC |
1/9/2022 | 8542326100 | INTEGRAL CIRCUIT OF ELECTRICALLY ERASSABLE REPROGRAMMABLE PERMANENT MEMORY DEVICE (EEPROM) WITH MEMORY CAPACITY NOT MORE THAN 512 Mbit. | 0.03 | 286.97 | Thailand | ST PETERSBURG RUSSIA | GAMMA ENGINEERING LLC |
1/21/2022 | 8542326100 | INTEGRAL CIRCUIT OF ELECTRICALLY ERASSABLE REPROGRAMMABLE PERMANENT MEMORY DEVICE (EEPROM) WITH MEMORY CAPACITY NOT MORE THAN 512 Mbit. | 0.08 | 1021.3 | Thailand | ST PETERSBURG RUSSIA | GAMMA ENGINEERING LLC |
1/12/2022 | 8542326100 | FLASH-ELECTRICALLY ERASUABLE REPROGRAMMABLE PERMANENT MEMORY DEVICE, THAT IS A MONOLITHIC DIGITAL INTEGRAL CIRCUIT, ASSEMBLED, WITH OUTPUTS, FOR INDUSTRIAL ELECTRONICS SYSTEMS, COMPUTER EQUIPMENT. MEMORY 64MBIT; NAPR | 0.67 | 4256.48 | Philippines | HONG KONG | VEST OST LLC |
1/11/2022 | 8542326100 | MICROCIRCUITS - MEMORY DEVICES ELECTRICALLY ERASABLE FULLY REPROGRAMMABLE PERMANENT STORAGE DEVICES FLASH-ES PROM BASED ON A MATRIX STRUCTURE, WITH A MEMORY CAPACITY OF 4 MBIT FOR USE IN PERSONAL COMPUTERS. NON-MILITARY | 0.83 | 940.7 | Philippines | NOVOSIBIRSK AIRPORT TOLMACHEVO | SIBELKOM LOGISTIC LLC |
1/11/2022 | 8542326100 | MICROCIRCUITS - MEMORY DEVICES ELECTRICALLY ERASABLE FULLY REPROGRAMMABLE PERMANENT STORAGE DEVICES FLASH-ES PROM BASED ON A MATRIX STRUCTURE, WITH A MEMORY CAPACITY OF 4 GBIT FOR USE IN PERSONAL COMPUTERS. NON-MILITARY AND | 0.6 | 485.05 | Thailand | NOVOSIBIRSK AIRPORT TOLMACHEVO | SIBELKOM LOGISTIC LLC |
1/26/2022 | 8542326100 | ELECTRONIC INTEGRATED STORAGE DEVICES ELECTRICALLY ERASEABLE COMPLETELY REPROGRAMMABLE PERMANENT STORAGE DEVICES FLASH-ES PROM BASED ON A MATRIX STRUCTURE, WITH A MEMORY VOLUME OF 16 MBIT FOR USE IN INDUSTRIAL ELECTRIC | 0.38 | 114.75 | Taiwan | EKATERENBURG | VEST OST LLC |
1/26/2022 | 8542326100 | ELECTRONIC INTEGRATED MONOLITHIC SINGLE-CRYSTAL ASSEMBLED, ELECTRICALLY ERASE REPROGRAMMABLE PERMANENT MEMORY DEVICES, FLASH-ES PROM WITH MEMORY MAXIMUM 512 MBIT, NOT WASTE, NOT SCRAP, MEMORY CAPACITY2 | 0.5 | 1203.7 | Taiwan | VANTAA AIRPORT | GAMMA LIMITED LLC |