1/26/2022 | 8542326100 | ELECTRONIC INTEGRATED STORAGE DEVICES ELECTRICALLY ERASEABLE COMPLETELY REPROGRAMMABLE PERMANENT STORAGE DEVICES FLASH-ES PROM BASED ON A MATRIX STRUCTURE, WITH A MEMORY VOLUME OF 16 MBIT FOR USE IN INDUSTRIAL ELECTRIC | 0.38 | 114.75 | Taiwan | EKATERENBURG | VEST OST LLC |
1/26/2022 | 8542326100 | ELECTRONIC INTEGRATED MONOLITHIC SINGLE-CRYSTAL ASSEMBLED, ELECTRICALLY ERASE REPROGRAMMABLE PERMANENT MEMORY DEVICES, FLASH-ES PROM WITH MEMORY MAXIMUM 512 MBIT, NOT WASTE, NOT SCRAP, MEMORY CAPACITY2 | 0.5 | 1203.7 | Taiwan | VANTAA AIRPORT | GAMMA LIMITED LLC |
1/31/2022 | 8542326100 | MONOLITHIC INTEGRAL CIRCUITS: ELECTRICALLY ERASURE REPROGRAMMABLE PERMANENT MEMORY DEVICES FLASH-ES PROM, FOR MOUNTING ON PRINTED BOARDS, WITHOUT THE CONTENT OF ENCRYPTION (CRYPTOGRAPHIC) MEANS, NON-MILITARY USE | 1 | 1770.82 | Taiwan | TAICHUNG PORT OF TAIWAN CHINA | MT SYSTEMS LLC |
1/12/2022 | 8542326100 | FLASH-ELECTRICALLY ERASUABLE REPROGRAMMABLE PERMANENT MEMORY DEVICE, THAT IS A MONOLITHIC DIGITAL INTEGRAL CIRCUIT, ASSEMBLED, WITH OUTPUTS, FOR INDUSTRIAL ELECTRONICS SYSTEMS, COMPUTER EQUIPMENT. MEMORY 32MBIT; NAPR | 0.48 | 2894.38 | Taiwan | HONG KONG | VEST OST LLC |
1/24/2022 | 8542326100 | INTEGRAL CIRCUIT OF ELECTRICALLY ERASSABLE REPROGRAMMABLE PERMANENT MEMORY DEVICE (EEPROM) WITH MEMORY CAPACITY NOT MORE THAN 512 Mbit. | 1.42 | 5164.9 | Taiwan | ST PETERSBURG RUSSIA | GAMMA ENGINEERING LLC |
1/21/2022 | 8542326100 | INTEGRAL CIRCUIT OF ELECTRICALLY ERASSABLE REPROGRAMMABLE PERMANENT MEMORY DEVICE (EEPROM) WITH MEMORY CAPACITY NOT MORE THAN 512 Mbit. | 1.42 | 5164.6 | Taiwan | ST PETERSBURG RUSSIA | GAMMA ENGINEERING LLC |
1/29/2022 | 8542326100 | ELECTRONIC INTEGRAL CIRCUITS - FLASH ELECTRICALLY ERASURE REPROGRAMMABLE PERMANENT STORAGE DEVICES, WITH A MEMORY CAPACITY NOT MORE THAN 512 Mbit | 0.09 | 859.76 | Taiwan | ST PETERSBURG RUSSIA | IMOTEK LLC |
1/29/2022 | 8542326100 | ELECTRONIC INTEGRAL CIRCUITS - FLASH ELECTRICALLY ERASURE REPROGRAMMABLE PERMANENT STORAGE DEVICES, WITH A MEMORY CAPACITY NOT MORE THAN 512 Mbit | 0.1 | 870.98 | Taiwan | ST PETERSBURG RUSSIA | IMOTEK LLC |
1/29/2022 | 8542326100 | ELECTRONIC INTEGRAL CIRCUITS - FLASH ELECTRICALLY ERASURE REPROGRAMMABLE PERMANENT STORAGE DEVICES, WITH A MEMORY CAPACITY NOT MORE THAN 512 Mbit | 0.1 | 901.34 | Taiwan | ST PETERSBURG RUSSIA | IMOTEK LLC |
1/19/2022 | 8542326100 | ELECTRONIC INTEGRAL CIRCUITS, ELECTRICALLY ERASABLE REPROGRAMMABLE PERMANENT MEMORY DEVICES: FLASH MEMORY CHIP WITH 256 Mbit MEMORY CAPACITY FOR SURFACE MOUNTING ON PRINTED BOARDS, FOR WIDE APPLICATIONS IN VARIOUS | 2.56 | 13793.3 | Taiwan | ALFELD GERMANY | EHTIINDASTRI LLC |