1/19/2022 | 8542326100 | MICROCIRCUITS - MEMORY DEVICES ELECTRICALLY ERASABLE FULLY REPROGRAMMABLE PERMANENT STORAGE DEVICES MRAM BASED ON A MATRIX STRUCTURE, WITH A MEMORY CAPACITY OF 1 Mbit FOR USE IN PERSONAL COMPUTERS. | 1.11 | 9743.1 | China | MOSCOW RUSSIA | SIBELKOM LOGISTIC LLC |
1/24/2022 | 8542326100 | ELECTRONIC INTEGRATED CIRCUITS, REPRESENTING MEMORY DEVICES ELECTRICALLY ERASABLE FULLY REPROGRAMMABLE PERMANENT - FLASH-ES PROM BASED ON A MATRIX STRUCTURE, WITH A MEMORY CAPACITY OF NO MORE THAN 512MBIT, FOR USE IN HOUSEHOLD | 1.47 | 696 | China | EKATERENBURG | VEST OST LLC |
1/11/2022 | 8542326100 | ELECTRONIC INTEGRATED ELECTRICALLY ERASABLE REPROGRAMMABLE PERMANENT MEMORY DEVICES (FLASH-ES PROM) WITH A MEMORY CAPACITY NOT MORE THAN 512 Mbit. DO NOT CONTAIN ENCRYPTION (CRYPTOGRAPHIC) DEVICES. DESIGNED FOR MOUNTING ON THE PRINT | 0.31 | 320.2 | China | EKATERENBURG | VEST OST LLC |
1/26/2022 | 8542326100 | ELECTRONIC INTEGRATED STORAGE DEVICES, FLASH ES PROM (FLASH MEMORY), WITH A MEMORY CAPACITY LESS THAN 512 MBT, ARE DESIGNED FOR USE IN ELECTRICAL ASSEMBLY, GENERAL PURPOSE, IMPORTED FOR USE | 4.55 | 12357.5 | China | HONG KONG | IP VELICHKO LYUDMILA ALEKSANDROVNA |
1/12/2022 | 8542326100 | ELECTRONIC INTEGRATED CIRCUITS, REPRESENTING MEMORY DEVICES ELECTRICALLY ERASABLE FULLY REPROGRAMMABLE PERMANENT - FLASH-ES PROM BASED ON A MATRIX STRUCTURE, WITH A MEMORY CAPACITY OF NO MORE THAN 512MBIT, FOR USE IN HOUSEHOLD | 0.15 | 685.2 | China | HONG KONG | VEST OST LLC |
1/10/2022 | 8542326100 | MICROCIRCUITS - MEMORY DEVICES ELECTRICALLY ERASABLE FULLY REPROGRAMMABLE PERMANENT STORAGE DEVICES FLASH-ES PROM BASED ON A MATRIX STRUCTURE, WITH A MEMORY CAPACITY OF 16 MBIT FOR USE IN PERSONAL COMPUTERS. | 0.07 | 612.35 | China | HONG KONG | SIBELKOM LOGISTIC LLC |
1/26/2022 | 8542326100 | MONOLITHIC INTEGRAL MICROCIRCUIT. STORAGE DEVICES-FLASH MEMORY. IN A MINIATURE CASE FOR SURFACE MOUNTING ON A PRINTED BOARD (SMD). NOT MILITARY USE, NOT NUCLEAR EQUIPMENT, NOT SCRAP OF ELECTRICAL EQUIPMENT; | 0.7 | 1546.7 | China | SHENZHEN CHINA | EYLER LLC |
1/18/2022 | 8542326100 | A FLASH-ES PROM WITH A MEMORY MAXIMUM 512 MB, IS NOT A RADIO ELECTRONIC AND/OR HIGH FREQUENCY DEVICE, NON MILITARY USE, NOT A SCRAP OF ELECTRICAL EQUIPMENT INTENDED FOR INDUSTRIAL ASSEMBLY: SEE APPENDIX | 3.12 | 6423 | China | MOSCOW RUSSIA | DIDZHIKOM LLC |
1/21/2022 | 8542326100 | MONOLITHIC INTEGRAL CIRCUITS: ELECTRICALLY ERASURE REPROGRAMMABLE PERMANENT MEMORY DEVICES FLASH-ES PROM, FOR MOUNTING ON PRINTED BOARDS, WITHOUT THE CONTENT OF ENCRYPTION (CRYPTOGRAPHIC) MEANS, NON-MILITARY USE | 19.45 | 30460.1 | China | SUZHOU | MT SYSTEMS LLC |
1/19/2022 | 8542326100 | FLASH-ELECTRICALLY ERASUABLE REPROGRAMMABLE PERMANENT MEMORY DEVICE, THAT IS A MONOLITHIC DIGITAL INTEGRAL CIRCUIT, ASSEMBLED, WITH OUTPUTS, FOR INDUSTRIAL ELECTRONICS SYSTEMS, COMPUTER EQUIPMENT. MEMORY 32MBIT; NAPR | 0.12 | 948.51 | China | HONG KONG | VEST OST LLC |