1/9/2022 | 8542326100 | INTEGRAL CIRCUIT OF ELECTRICALLY ERASSABLE REPROGRAMMABLE PERMANENT MEMORY DEVICE (EEPROM) WITH MEMORY CAPACITY NOT MORE THAN 512 Mbit. | 0.06 | 1724.79 | Thailand | ST PETERSBURG RUSSIA | GAMMA ENGINEERING LLC |
1/9/2022 | 8542326100 | INTEGRAL CIRCUIT OF ELECTRICALLY ERASSABLE REPROGRAMMABLE PERMANENT MEMORY DEVICE (EEPROM) WITH MEMORY CAPACITY NOT MORE THAN 512 Mbit. | 0.03 | 286.97 | Thailand | ST PETERSBURG RUSSIA | GAMMA ENGINEERING LLC |
1/21/2022 | 8542326100 | INTEGRAL CIRCUIT OF ELECTRICALLY ERASSABLE REPROGRAMMABLE PERMANENT MEMORY DEVICE (EEPROM) WITH MEMORY CAPACITY NOT MORE THAN 512 Mbit. | 0.08 | 1021.3 | Thailand | ST PETERSBURG RUSSIA | GAMMA ENGINEERING LLC |
1/11/2022 | 8542326100 | MICROCIRCUITS - MEMORY DEVICES ELECTRICALLY ERASABLE FULLY REPROGRAMMABLE PERMANENT STORAGE DEVICES FLASH-ES PROM BASED ON A MATRIX STRUCTURE, WITH A MEMORY CAPACITY OF 4 GBIT FOR USE IN PERSONAL COMPUTERS. NON-MILITARY AND | 0.6 | 485.05 | Thailand | NOVOSIBIRSK AIRPORT TOLMACHEVO | SIBELKOM LOGISTIC LLC |
1/24/2022 | 8542326100 | INTEGRAL CIRCUIT OF ELECTRICALLY ERASSABLE REPROGRAMMABLE PERMANENT MEMORY DEVICE (EEPROM) WITH MEMORY CAPACITY NOT MORE THAN 512 Mbit. | 0.08 | 1021.6 | Thailand | ST PETERSBURG RUSSIA | GAMMA ENGINEERING LLC |
1/19/2022 | 8542326100 | ELECTRONIC INTEGRATED ELECTRICALLY ERASABLE REPROGRAMMABLE PERMANENT MEMORY DEVICES (FLASH-ES PROM) WITH A MEMORY CAPACITY NOT MORE THAN 512 Mbit. DO NOT CONTAIN ENCRYPTION (CRYPTOGRAPHIC) DEVICES. DESIGNED FOR MOUNTING ON THE PRINT | 0.3 | 2796.39 | Thailand | HONG KONG | VEST OST LLC |
1/14/2022 | 8542326100 | INTEGRAL CIRCUIT OF ELECTRICALLY ERASSABLE REPROGRAMMABLE PERMANENT MEMORY DEVICE (EEPROM) WITH MEMORY CAPACITY NOT MORE THAN 512 Mbit. | 0.08 | 481.48 | Thailand | ST PETERSBURG RUSSIA | GAMMA ENGINEERING LLC |
1/14/2022 | 8542326100 | INTEGRAL CIRCUIT OF ELECTRICALLY ERASSABLE REPROGRAMMABLE PERMANENT MEMORY DEVICE (EEPROM) WITH MEMORY CAPACITY NOT MORE THAN 512 Mbit. | 0.03 | 285.26 | Thailand | ST PETERSBURG RUSSIA | GAMMA ENGINEERING LLC |
1/14/2022 | 8542326100 | INTEGRAL CIRCUIT OF ELECTRICALLY ERASSABLE REPROGRAMMABLE PERMANENT MEMORY DEVICE (EEPROM) WITH MEMORY CAPACITY NOT MORE THAN 512 Mbit. | 0.04 | 799.48 | Thailand | ST PETERSBURG RUSSIA | GAMMA ENGINEERING LLC |
1/25/2022 | 8542326100 | ELECTRONIC INTEGRATED STORAGE DEVICES ELECTRICALLY ERASEABLE COMPLETELY REPROGRAMMABLE PERMANENT STORAGE DEVICES FLASH-ES PROM BASED ON A MATRIX STRUCTURE, WITH A MEMORY CAPACITY OF 4 MBIT FOR USE IN INDUSTRIAL ELECTRIC | 0.47 | 1375.53 | Thailand | HONG KONG | VEST OST LLC |