1/20/2022 | 8542326100 | INTEGRATED ELECTRONIC CIRCUITS, FLASH-ES PP MEMORY WITH A MEMORY CAPACITY OF NO MORE THAN 512 Mbps, NOT A SCRAP OF ELECTRICAL EQUIPMENT, FOR INSTALLATION AND REPAIR OF HOUSEHOLD RADIO-ELECTRONIC EQUIPMENT | 0 | 5.44 | China | MOSCOW RUSSIA | STATUS LLC |
1/15/2022 | 8542323100 | DYNAMIC RANDOM MEMORY DEVICES (DOSES) WITH A MEMORY CAPACITY NOT MORE THAN 512 Mbps FOR PRODUCTION. EL.ENERGY METER / NOT SCRAP, NOT WASTE / NOT DOUBLE, NOT MILITARY. INTENDED / NOT FOR EQUIPMENT WORKING IN EXPLOSIVE ATMOSPHERES / PASSIVE IN | 4.4 | 12691.3 | Thailand | SANTA OLIVA TARRAGONA | DIDZHIKOM LLC |
1/14/2022 | 8542323100 | DYNAMIC RANDOM MEMORY DEVICES (DOSES) WITH A MEMORY CAPACITY OF NO MORE THAN 512 MB / IS NOT A SCRAP /: | 0.02 | 67.52 | Taiwan | HONG KONG | REGIONAL SYSTEM PROJECTS LLC |
1/13/2022 | 8542326100 | ELECTRONIC INTEGRATED MONOLITHIC SINGLE-CRYSTAL ASSEMBLED, ELECTRICALLY ERASABLE REPROGRAMMABLE PERMANENT MEMORY DEVICES, FLASH-ES PROM WITH MEMORY MAXIMUM 512 MB, NOT WASTE, NOT SCRAP, MEMORY CAPACITY 6 MB | 0.17 | 428.46 | Philippines | VANTAA AIRPORT | GAMMA LIMITED LLC |
1/13/2022 | 8542326100 | ELECTRONIC INTEGRATED MONOLITHIC SINGLE-CRYSTAL ASSEMBLED, ELECTRICALLY ERASE REPROGRAMMABLE PERMANENT MEMORY DEVICES, FLASH-ES PROM WITH MEMORY MAXIMUM 512 MBIT, NOT WASTE, NOT SCRAP, MEMORY CAPACITY | 0.02 | 12.29 | Taiwan | VANTAA AIRPORT | GAMMA LIMITED LLC |
1/15/2022 | 8542326100 | FLASH-ES PROM WITH A MEMORY CAPACITY OF NO MORE THAN 512 Mbps, FOR MOUNTING ON A PRINTED BOARD, ARE USED AS ACCESSORIES IN THE CIVIL RADIO ELECTRONIC INDUSTRY. DO NOT BE A SCRAP OF ELECTRICAL EQUIPMENT. DO NOT HAVE ENCRYPTION FUNCTIONS AND | 0.01 | 75.22 | China | MOSCOW RUSSIA | VTF GROUP LLC |
1/15/2022 | 8542326100 | FLASH-ES PROM WITH A MEMORY CAPACITY OF NO MORE THAN 512 Mbps, FOR MOUNTING ON A PRINTED BOARD, ARE USED AS ACCESSORIES IN THE CIVIL RADIO ELECTRONIC INDUSTRY. DO NOT BE A SCRAP OF ELECTRICAL EQUIPMENT. DO NOT HAVE ENCRYPTION FUNCTIONS AND | 0.01 | 78.16 | China | MOSCOW RUSSIA | VTF GROUP LLC |
1/13/2022 | 8542326100 | INTEGRATED ELECTRONIC CIRCUITS, FLASH-ES PP MEMORY WITH A MEMORY CAPACITY OF NO MORE THAN 512 Mbps, NOT A SCRAP OF ELECTRICAL EQUIPMENT, FOR INSTALLATION AND REPAIR OF HOUSEHOLD RADIO-ELECTRONIC EQUIPMENT | 0 | 5.32 | Taiwan | MOSCOW RUSSIA | STATUS LLC |
1/17/2022 | 8542323900 | INTEGRATED ELECTRONIC MICROSCIRCUIT, MONOLITHIC (DYNAMIC RANDOM MEMORY DEVICES (DOSES) WITH A MEMORY CAPACITY OF MORE THAN 512 Mbit), WITHOUT THE FUNCTION OF ENCRYPTION (CRYPTOGRAPHY), NOT SCRAP OF ELECTRICAL EQUIPMENT, CIVIL APPLICATION, FOR INDUSTRIAL USE | 1.85 | 19154.9 | South Korea | MOSCOW RUSSIA | SAMSUNG ELECTRONICS RUS COMPANY LLC |
1/17/2022 | 8542326100 | INTEGRATED ELECTRONIC CIRCUITS, FLASH-ES PP MEMORY WITH A MEMORY CAPACITY OF NO MORE THAN 512 Mbps, NOT A SCRAP OF ELECTRICAL EQUIPMENT, FOR INSTALLATION AND REPAIR OF HOUSEHOLD RADIO-ELECTRONIC EQUIPMENT | 0.09 | 387.27 | Malaysia | MOSCOW RUSSIA | STATUS LLC |