1/23/2022 | 8542323900 | INTEGRATED, MONOLITHIC, DYNAMIC RANDOM MEMORY DEVICES (DOSES) WITH A MEMORY CAPACITY OF MORE THAN 512 MBIT, WITHOUT A FUNCTION OF ENCRYPTION (CRYPTOGRAPHY), NOT A SCRAP OF ELECTRICAL EQUIPMENT, ACCESSORIES FOR INDUSTRIAL ASSEMBLY ASSEMBLY | 1.15 | 1116.55 | Taiwan | TAIPEI AIRPORT TAIWAN | SAMSUNG ELECTRONICS RUS COMPANY LLC |
1/30/2022 | 8542323900 | ELECTRONIC INTEGRATED, DYNAMIC RANDOM MEMORY DEVICES (DOSES) WITH A MEMORY CAPACITY OF MORE THAN 512 MBIT CONTAINS CRYPTOGRAPHY (ENCRYPTION) FUNCTIONS, NOT SCRAP EQUIPMENT, DRAM MEMORY, MEMORY SIZE: 2 GBIT, VOLTAGE: 1.7-9 | 0.02 | 622.29 | United States of America | TSUEN WAN HONG KONG | SPHERE OF ELECTRONICS LLC |
1/17/2022 | 8542323900 | INTEGRATED ELECTRONIC MICROSCIRCUIT, MONOLITHIC (DYNAMIC RANDOM MEMORY DEVICES (DOSES) WITH A MEMORY CAPACITY OF MORE THAN 512 Mbit), WITHOUT THE FUNCTION OF ENCRYPTION (CRYPTOGRAPHY), NOT SCRAP OF ELECTRICAL EQUIPMENT, CIVIL APPLICATION, FOR INDUSTRIAL USE | 1.85 | 19154.9 | South Korea | MOSCOW RUSSIA | SAMSUNG ELECTRONICS RUS COMPANY LLC |