1/28/2022 | 8542326900 | MONOLITHIC ELECTRONIC INTEGRATED CIRCUITS: ELECTRICALLY ERASABLE REPROGRAMMABLE PERMANENT MEMORY (FLASH-ES PROM) WITH A MEMORY CAPACITY FROM 512 MBIT, NOT RADIATION RESISTANT, NOT SCRAP OF ELECTRICAL EQUIPMENT | 0.85 | 26779 | Taiwan | ST PETERSBURG RUSSIA | COMPONENT LOGISTIC LLC |
1/10/2022 | 8542326900 | MEMORY CHIP MONOLITHIC INTEGRAL ELECTRICALLY ERASABLE REPROGRAMMABLE, NOT SCRAP ELECTRICAL EQUIPMENT, NAND FLASH, CAPACITY 2 GB (FLASH MEMORY CONFIGURATION: 256M X 8BIT) , VOLTAGE.2 | 3.58 | 4549.76 | Taiwan | NOVOSIBIRSK AIRPORT TOLMACHEVO | VEGA ABSOLUT LLC |
1/26/2022 | 8542326100 | ELECTRONIC INTEGRATED MONOLITHIC SINGLE-CRYSTAL ASSEMBLED, ELECTRICALLY ERASE REPROGRAMMABLE PERMANENT MEMORY DEVICES, FLASH-ES PROM WITH MEMORY MAXIMUM 512 MBIT, NOT WASTE, NOT SCRAP, MEMORY CAPACITY2 | 0.5 | 1203.7 | Taiwan | VANTAA AIRPORT | GAMMA LIMITED LLC |
1/23/2022 | 8542323900 | INTEGRATED, MONOLITHIC, DYNAMIC RANDOM MEMORY DEVICES (DOSES) WITH A MEMORY CAPACITY OF MORE THAN 512 MBIT, WITHOUT A FUNCTION OF ENCRYPTION (CRYPTOGRAPHY), NOT A SCRAP OF ELECTRICAL EQUIPMENT, ACCESSORIES FOR INDUSTRIAL ASSEMBLY ASSEMBLY | 1.15 | 1116.55 | Taiwan | TAIPEI AIRPORT TAIWAN | SAMSUNG ELECTRONICS RUS COMPANY LLC |
1/13/2022 | 8542326100 | INTEGRATED ELECTRONIC CIRCUITS, FLASH-ES PP MEMORY WITH A MEMORY CAPACITY OF NO MORE THAN 512 Mbps, NOT A SCRAP OF ELECTRICAL EQUIPMENT, FOR INSTALLATION AND REPAIR OF HOUSEHOLD RADIO-ELECTRONIC EQUIPMENT | 0 | 5.32 | Taiwan | MOSCOW RUSSIA | STATUS LLC |
1/13/2022 | 8542326100 | ELECTRONIC INTEGRATED MONOLITHIC SINGLE-CRYSTAL ASSEMBLED, ELECTRICALLY ERASE REPROGRAMMABLE PERMANENT MEMORY DEVICES, FLASH-ES PROM WITH MEMORY MAXIMUM 512 MBIT, NOT WASTE, NOT SCRAP, MEMORY CAPACITY | 0.02 | 12.29 | Taiwan | VANTAA AIRPORT | GAMMA LIMITED LLC |
1/14/2022 | 8542323100 | DYNAMIC RANDOM MEMORY DEVICES (DOSES) WITH A MEMORY CAPACITY OF NO MORE THAN 512 MB / IS NOT A SCRAP /: | 0.02 | 67.52 | Taiwan | HONG KONG | REGIONAL SYSTEM PROJECTS LLC |