1/12/2022 | 8542326100 | INTEGRATED ELECTRONIC CIRCUITS, FLASH-ES PP MEMORY WITH A MEMORY CAPACITY OF NO MORE THAN 512 Mbps, NOT A SCRAP OF ELECTRICAL EQUIPMENT, FOR INSTALLATION AND REPAIR OF HOUSEHOLD RADIO-ELECTRONIC EQUIPMENT | 0 | 3.13 | China | MOSCOW RUSSIA | STATUS LLC |
1/12/2022 | 8542326100 | INTEGRATED ELECTRONIC CIRCUITS, FLASH-ES PP MEMORY WITH A MEMORY CAPACITY OF NO MORE THAN 512 Mbps, NOT A SCRAP OF ELECTRICAL EQUIPMENT, FOR INSTALLATION AND REPAIR OF HOUSEHOLD RADIO-ELECTRONIC EQUIPMENT | 0 | 6.52 | China | MOSCOW RUSSIA | STATUS LLC |
1/12/2022 | 8542326100 | INTEGRATED ELECTRONIC CIRCUITS, FLASH-ES PP MEMORY WITH A MEMORY CAPACITY OF NO MORE THAN 512 Mbps, NOT A SCRAP OF ELECTRICAL EQUIPMENT, FOR INSTALLATION AND REPAIR OF HOUSEHOLD RADIO-ELECTRONIC EQUIPMENT | 0 | 3.19 | China | MOSCOW RUSSIA | STATUS LLC |
1/12/2022 | 8542326100 | INTEGRATED ELECTRONIC CIRCUITS, FLASH-ES PP MEMORY WITH A MEMORY CAPACITY OF NO MORE THAN 512 Mbps, NOT A SCRAP OF ELECTRICAL EQUIPMENT, FOR INSTALLATION AND REPAIR OF HOUSEHOLD RADIO-ELECTRONIC EQUIPMENT | 0 | 5.51 | China | MOSCOW RUSSIA | STATUS LLC |
1/21/2022 | 8542326100 | INTEGRATED ELECTRONIC CIRCUITS, FLASH-ES PP MEMORY WITH A MEMORY CAPACITY OF NO MORE THAN 512 Mbps, NOT A SCRAP OF ELECTRICAL EQUIPMENT, FOR INSTALLATION AND REPAIR OF HOUSEHOLD RADIO-ELECTRONIC EQUIPMENT | 0 | 6.09 | China | MOSCOW RUSSIA | STATUS LLC |
1/19/2022 | 8542319010 | INTEGRATED MONOLITHIC CIRCUITS FOR VOLTAGE 3.6 V, IN WHICH CIRCUIT ELEMENTS (DIODES, TRANSISTORS, RESISTORS, CAPACITORS, INTER-ELEMENT CONNECTIONS) ARE FORMED IN THE MASS AND ON THE SURFACE OF THE SEMICONDUCTOR MATERIAL, ARE NOT SCRAP | 0.14 | 5663.66 | China | MOSCOW CITY | DELAN JSC |
1/19/2022 | 8542319010 | INTEGRATED MONOLITHIC CIRCUITS FOR VOLTAGE 5 V, IN WHICH CIRCUIT ELEMENTS (DIODES, TRANSISTORS, RESISTORS, CAPACITORS, INTER-ELEMENT CONNECTIONS) ARE FORMED IN THE MASS AND ON THE SURFACE OF THE SEMICONDUCTOR MATERIAL, ARE NOT A SCRAP OF ELECTRICAL EQUIPMENT | 0.01 | 12.73 | China | MOSCOW CITY | DELAN JSC |
1/19/2022 | 8542319010 | INTEGRATED MONOLITHIC CIRCUITS FOR VOLTAGE 5 V, IN WHICH CIRCUIT ELEMENTS (DIODES, TRANSISTORS, RESISTORS, CAPACITORS, INTER-ELEMENT CONNECTIONS) ARE FORMED IN THE MASS AND ON THE SURFACE OF THE SEMICONDUCTOR MATERIAL, ARE NOT A SCRAP OF ELECTRICAL EQUIPMENT | 0.01 | 151.44 | China | MOSCOW CITY | DELAN JSC |
1/19/2022 | 8542319010 | INTEGRATED MONOLITHIC CIRCUITS FOR VOLTAGE 5 V, IN WHICH CIRCUIT ELEMENTS (DIODES, TRANSISTORS, RESISTORS, CAPACITORS, INTER-ELEMENT CONNECTIONS) ARE FORMED IN THE MASS AND ON THE SURFACE OF THE SEMICONDUCTOR MATERIAL, ARE NOT A SCRAP OF ELECTRICAL EQUIPMENT | 0.01 | 36.54 | China | MOSCOW CITY | DELAN JSC |
1/24/2022 | 8542326100 | ELECTRONIC INTEGRAL CIRCUITS, FLASH-ES PROM WITH A MEMORY CAPACITY NOT MORE THAN 512 Mbps, DOES NOT CONTAIN CRYPTOGRAPHY (ENCRYPTION) TOOLS, NOT SCRAP EQUIPMENT, FOR INSTALLATION IN ELECTRONIC BOARDS, EMMC FLASH, MEMORY SIZE: | 0.05 | 1106.81 | China | TSUEN WAN HONG KONG | TESTKOMPLEKT LLC |