1/13/2022 | 8541410004 | LED INFRARED LL-AR180IRC-2A-TR2. BELONG TO THE LED TYPE (NON-ORGANIC). IS A CHIP COMPONENT WITH TWO TERMINALS. BETWEEN THE CONCLUSIONS THERE IS A PN JUNCTION ON A SILICON CRYSTAL. WHEN CURRENT IS PASSED THROUGH PN JUNCTION IN DIRECT | 23.5 | 9691.56 | China | HONG KONG | ENERGOMERA JSC |
1/27/2022 | 8541410004 | SURFACE-MOUNTED INORGANIC LED, SEMICONDUCTOR DEVICE WITH ELECTRON-HOLE R-P JUNCTION OR METAL-SEMILCONDUCTOR CONTACT | 110.59 | 16304.4 | China | MOSCOW RUSSIA | OOO TD NEON EK |
1/13/2022 | 8541410008 | LEDS - A SEMICONDUCTOR DEVICE WITH AN ELECTRONIC-HOLE JUNCTION OR METAL-SEMILCONDUCTOR CONTACT, CREATING OPTICAL RADIATION WHEN ELECTRIC CURRENT IS PASSED THROUGH IT, USED IN GENERAL-PURPOSE ELECTRONIC DEVICES | 0.47 | 705.1 | China | MOSCOW RUSSIA | MATRIX ELECTRONICS LLC |
1/19/2022 | 8541410004 | LEDS IS A SEMICONDUCTOR DEVICE WITH ELECTRONIC-HOLE JUNCTION OR METAL-SEMICONDUCTOR CONTACT, CREATING OPTICAL RADIATION WHEN ELECTRIC CURRENT IS PASSED THROUGH IT. USED IN GENERAL PURPOSE ELECTRONIC DEVICES. NOT FOR RETAIL | 2.41 | 3065.3 | China | MOSCOW RUSSIA | SIBELKOM LOGISTIC LLC |
1/10/2022 | 8541490000 | PHOTODIOD-RECEIVER OF OPTICAL RADIATION WHICH CONVERTS LIGHT ITS PHOTO-SENSITIVE AREA INTO ELECTRIC CHARGE DUE TO PROCESSES IN PN-JUNCTION. APPLIED EVERYWHERE IN ELECTRICAL APPLIANCES. NOT FOR RETAIL. | 0.43 | 7129.74 | Taiwan | TAIPEI AIRPORT TAIWAN | SIBELKOM LOGISTIC LLC |
1/24/2022 | 8541100009 | SCHOTTKY DIODE STPS1L30A IS A P-N JUNCTION MADE ON A SILICON CRYSTAL IN A PLASTIC CASE WITH TWO NICKEL TERMINALS. DOES NOT HAVE PHOTO SENSITIVITY. SURFACE MOUNTED. | 5.42 | 1285.71 | China | STAVROPOL DISTRICT S NEW BINARADKA | ENERGOMERA JSC |
1/28/2022 | 8541100009 | SEMICONDUCTOR DIODES ARE TWO-ELECTRODE DEVICES WITH ONE PN JUNCTION. ARE NOT LIGHT EMITTING. THEY ARE USED IN THE PRODUCTION OF RADIO EQUIPMENT FOR GENERAL INDUSTRIAL PURPOSE ARE NOT DIODE GROUNDING. MAXIMUM | 6.7 | 7788.46 | China | MOSCOW RUSSIA | PROMELKOM LLC |
1/25/2022 | 8541290000 | BIPOLAR TRANSISTOR (NPN) WITH INSULATED SEMICONDUCTOR GATE. MAXIMUM POWER DISSIPATION 1.35 W. MAXIMUM COLLECTOR-EMMITTER VOLTAGE 45 V. MAXIMUM EMMITTER JUNCTION VOLTAGE 5 V. COLLECTOR CURRENT 1?. TYPE OF SEMICONDUCTOR | 4.2 | 1472.39 | China | COWLUN | ELECTROKOM VPK LLC |
1/11/2022 | 8541410004 | SURFACE-MOUNTED INORGANIC LED, SEMICONDUCTOR DEVICE WITH ELECTRON-HOLE R-P JUNCTION OR METAL-SEMILCONDUCTOR CONTACT | 12.05 | 22310.3 | South Korea | MOSCOW RUSSIA | OOO TD NEON EK |
1/24/2022 | 8541100009 | DIODE VS-10MQ060NTRPBF. 2-ELECTRODE SEMICONDUCTOR DEVICE WITH SINGLE-SIDE CONDUCTIVITY (WELL PASSES CURRENT THROUGH ITSELF IN ONE DIRECTION AND VERY BADLY IN THE OTHER). IS A PN JUNCTION MADE ON A SILICON CRYSTAL. NOT | 0.78 | 345.87 | China | STAVROPOL DISTRICT S NEW BINARADKA | ENERGOMERA JSC |