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Latest Russia Import Data of Textile under HS Code 8541 from China

Get latest Russia Import Data of textile under HS Code 05010000 based on shipping from China. Find detailed Russia imports from China with Unit, Price, Buyer name, Port of Unloading & shipment information. Align your business to Russia Market using an impactful data-driven strategy.

DateHS CodeProduct DetailsNet WeightTotal Value (USD)CountryShipment PlaceBuyer
1/13/20228541410004LED INFRARED LL-AR180IRC-2A-TR2. BELONG TO THE LED TYPE (NON-ORGANIC). IS A CHIP COMPONENT WITH TWO TERMINALS. BETWEEN THE CONCLUSIONS THERE IS A PN JUNCTION ON A SILICON CRYSTAL. WHEN CURRENT IS PASSED THROUGH PN JUNCTION IN DIRECT23.59691.56ChinaHONG KONGENERGOMERA JSC
1/27/20228541410004SURFACE-MOUNTED INORGANIC LED, SEMICONDUCTOR DEVICE WITH ELECTRON-HOLE R-P JUNCTION OR METAL-SEMILCONDUCTOR CONTACT110.5916304.4ChinaMOSCOW  RUSSIAOOO TD NEON EK
1/13/20228541410008LEDS - A SEMICONDUCTOR DEVICE WITH AN ELECTRONIC-HOLE JUNCTION OR METAL-SEMILCONDUCTOR CONTACT, CREATING OPTICAL RADIATION WHEN ELECTRIC CURRENT IS PASSED THROUGH IT, USED IN GENERAL-PURPOSE ELECTRONIC DEVICES0.47705.1ChinaMOSCOW  RUSSIAMATRIX ELECTRONICS LLC
1/19/20228541410004LEDS IS A SEMICONDUCTOR DEVICE WITH ELECTRONIC-HOLE JUNCTION OR METAL-SEMICONDUCTOR CONTACT, CREATING OPTICAL RADIATION WHEN ELECTRIC CURRENT IS PASSED THROUGH IT. USED IN GENERAL PURPOSE ELECTRONIC DEVICES. NOT FOR RETAIL2.413065.3ChinaMOSCOW  RUSSIASIBELKOM LOGISTIC LLC
1/24/20228541100009SCHOTTKY DIODE STPS1L30A IS A P-N JUNCTION MADE ON A SILICON CRYSTAL IN A PLASTIC CASE WITH TWO NICKEL TERMINALS. DOES NOT HAVE PHOTO SENSITIVITY. SURFACE MOUNTED.5.421285.71ChinaSTAVROPOL DISTRICT S NEW BINARADKAENERGOMERA JSC
1/28/20228541100009SEMICONDUCTOR DIODES ARE TWO-ELECTRODE DEVICES WITH ONE PN JUNCTION. ARE NOT LIGHT EMITTING. THEY ARE USED IN THE PRODUCTION OF RADIO EQUIPMENT FOR GENERAL INDUSTRIAL PURPOSE ARE NOT DIODE GROUNDING. MAXIMUM6.77788.46ChinaMOSCOW  RUSSIAPROMELKOM LLC
1/25/20228541290000BIPOLAR TRANSISTOR (NPN) WITH INSULATED SEMICONDUCTOR GATE. MAXIMUM POWER DISSIPATION 1.35 W. MAXIMUM COLLECTOR-EMMITTER VOLTAGE 45 V. MAXIMUM EMMITTER JUNCTION VOLTAGE 5 V. COLLECTOR CURRENT 1?. TYPE OF SEMICONDUCTOR4.21472.39ChinaCOWLUNELECTROKOM VPK LLC
1/24/20228541100009DIODE VS-10MQ060NTRPBF. 2-ELECTRODE SEMICONDUCTOR DEVICE WITH SINGLE-SIDE CONDUCTIVITY (WELL PASSES CURRENT THROUGH ITSELF IN ONE DIRECTION AND VERY BADLY IN THE OTHER). IS A PN JUNCTION MADE ON A SILICON CRYSTAL. NOT0.78345.87ChinaSTAVROPOL DISTRICT S NEW BINARADKAENERGOMERA JSC
1/18/20228541100009SCHOTTKY DIODE STPS1L30A IS A P-N JUNCTION MADE ON A SILICON CRYSTAL IN A PLASTIC CASE WITH TWO NICKEL TERMINALS. DOES NOT HAVE PHOTO SENSITIVITY. SURFACE MOUNTED.10.152523ChinaSTAVROPOL DISTRICT S NEW BINARADKAENERGOMERA JSC
1/18/20228541100009DIODE VS-10MQ060NTRPBF. 2-ELECTRODE SEMICONDUCTOR DEVICE WITH SINGLE-SIDE CONDUCTIVITY (WELL PASSES THE CURRENT THROUGH ITSELF IN ONE DIRECTION AND VERY BADLY IN THE OTHER). IS A PN JUNCTION MADE ON A SILICON CRYSTAL. NOT0.78348.23ChinaSTAVROPOL DISTRICT S NEW BINARADKAENERGOMERA JSC

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