1/26/2022 | 8541210000 | TRANSISTOR. A BIPOLAR FORWARD CONDUCTIVITY TRANSISTOR (PNP) IS A THREE-ELECTRODE SEMICONDUCTOR DEVICE WITH TWO PARALLEL NP JUNCTIONS AT A CLOSE DISTANCE. THE TRANSISTOR CONSISTS OF THREE MAIN AREAS: EMMITTER | 30.9 | 4232.19 | China | DUNGGUAN | ENERGOMERA JSC |
1/28/2022 | 8541210000 | BIPOLAR TRANSISTORS WITH PNP JUNCTION BC857W,115 , WITH A TOTAL POWER DISSIPATION OF 0.25W. TYPE OF SEMICONDUCTOR SILICON. | 2.03 | 359.01 | Malaysia | ST PETERSBURG RUSSIA | ALR LLC |
1/8/2022 | 8541210000 | FIELD FIELD TRANSISTORS WITH CONTROL PN-JUNCTION, POWER DISPOSION 0. 350 W | 0.84 | 2950.93 | China | SHENZHEN CHINA | ELSITON COMPONENT LLC |
1/21/2022 | 8541210000 | UNIVERSAL BIPOLAR TRANSISTORS BC847BLT1G AND BC856B,215 WITH PNP JUNCTION, POWER DISSIPATION 0.225W AND 0.25W, DC VOLTAGE COLLECTOR-EMMITTER CURRENT 45V AND 65V, COLLECTOR CURRENT 100MA, INTENDED FOR APPLICATION IN VARIOUS SWITCHES | 16.52 | 4031.87 | China | ST PETERSBURG RUSSIA | ALR LLC |
1/13/2022 | 8541210000 | UNIVERSAL BIPOLAR TRANSISTORS BC847B,215 , BC847BLT1G AND BC856B,215 WITH PNP JUNCTION, POWER DISSIPATION 0.225W AND 0.25W, DC VOLTAGE. COLLECTOR-EMMITTER CURRENT 45V AND 65V, COLLECTOR CURRENT 100MA, INTENDED FOR APPLICATION IN VARIOUS | 13.25 | 3322.84 | China | ST PETERSBURG RUSSIA | ALR LLC |
1/24/2022 | 8541210000 | TRANSISTOR BC817-40.215. BIPOLAR REVERSE CONDUCTIVITY TRANSISTOR (NPN) IS A THREE-ELECTRODE SEMICONDUCTOR DEVICE WITH TWO PARALLEL NP JUNCTIONS AT A CLOSE DISTANCE. | 0.84 | 233.59 | China | STAVROPOL DISTRICT S NEW BINARADKA | ENERGOMERA JSC |