1/24/2022 | 8541290000 | TRANSISTOR. THE PRODUCT IS A FIELD TRANSISTOR WITH A MAXIMUM DISPOSIVE POWER OF 150 W AND OPERATING VOLTAGE BETWEEN THE DRAIN-SOURCE UP TO 1200 V. MADE IN A HIP247 CASE. IS NOT A SCRAP OF ELECTRICAL EQUIPMENT. IMPORTED AS | 2 | 2657.22 | China | MOSCOW RUSSIA | PLANAR LLC |
1/21/2022 | 8541290000 | TRANSISTOR. THE PRODUCT IS A FIELD TRANSISTOR WITH MAXIMUM DISPOSIVE POWER UP TO 62.5 W AND OPERATING VOLTAGE BETWEEN DRAIN-SOURCE UP TO 150 V. MADE IN A POWERPAK 1212-8W CASE. IS NOT A SCRAP OF ELECTRICAL EQUIPMENT. IMPORTED INTO | 0.13 | 431.88 | China | MOSCOW RUSSIA | PLANAR LLC |
1/19/2022 | 8541100009 | RECTIFYING SCHOTTKY DIODE IN THE FORM OF A CHIP, DESIGNED FOR AUTOMATIC MOUNTING ON THE BOARD, DOES NOT CONTAIN RADIOACTIVE EMISSION SOURCES, DESIGNED FOR VOLTAGE 16V | 0.01 | 38.53 | China | MOSCOW RUSSIA | SYNERGIA DISTRIBUTION LLC |
1/19/2022 | 8541100009 | RECTIFYING SCHOTTKY DIODE IN THE FORM OF A CHIP, DESIGNED FOR AUTOMATIC MOUNTING ON THE BOARD, DOES NOT CONTAIN RADIOACTIVE EMISSION SOURCES, DESIGNED FOR VOLTAGE 16V | 0.01 | 13.02 | China | MOSCOW RUSSIA | SYNERGIA DISTRIBUTION LLC |
1/19/2022 | 8541290000 | MOSFET, FOR AUTOMATIC MOUNTING ON THE BOARD, DOES NOT CONTAIN RADIOACTIVE SOURCES, DESIGNED TO WORK AT 16V VOLTAGE | 0.01 | 51.66 | China | MOSCOW RUSSIA | SYNERGIA DISTRIBUTION LLC |
1/19/2022 | 8541100009 | RECTIFYING SCHOTTKY DIODE IN THE FORM OF A CHIP, DESIGNED FOR AUTOMATIC MOUNTING ON THE BOARD, DOES NOT CONTAIN RADIOACTIVE EMISSION SOURCES, DESIGNED FOR VOLTAGE 16V | 0.01 | 11.49 | China | MOSCOW RUSSIA | SYNERGIA DISTRIBUTION LLC |
1/29/2022 | 8541290000 | SEMICONDUCTOR DEVICE: N-CHANNEL MOSFET TRANSISTOR. MAXIMUM POWER DISSIPATION 75 W. DRAIN-SOURCE VOLTAGE 100 V. DIMENSIONS 6.35 X 5.4 X 0.95MM. IS NOT A SCRAP OF ELECTRICAL EQUIPMENT. USED IN ELECTRICAL ENGINEERING | 0.04 | 25.42 | China | Hayes | YUE COMPLEX SERVICE SOLUTIONS JSC |
1/25/2022 | 8541100009 | HIGH-VOLTAGE PULSE DIODES, TYPE - SILICON, FOR CONVERSION OF AC PULSE VOLTAGE INTO DC, IN A PLASTIC CASE WITH FLEXIBLE OUTPUTS, APPLIED IN POWER SOURCES OF MEDICAL X-RAY EQUIPMENT | 10 | 2522.25 | China | YIXING JIANGSU CHINA | BITRONIK LLC |
1/28/2022 | 8541290000 | SEMICONDUCTOR DEVICE: N-CHANNEL TRANSISTOR. VOLTAGE DRAIN-SOURCE 20V. SCATTERING POWER 1.6W. IS NOT A SCRAP OF ELECTRICAL EQUIPMENT. USED IN ELECTRICAL ENGINEERING | 0.01 | 4.53 | China | Hayes | YUE COMPLEX SERVICE SOLUTIONS JSC |
1/28/2022 | 8541290000 | SEMICONDUCTOR DEVICES: P-CHANNEL MOS TRANSISTOR. MAXIMUM POWER DISSIPATION 4.24 W. DRAIN-SOURCE VOLTAGE -100 V. CONTINUOUS DRAIN CURRENT 4.6A. DIMENSIONS 6.73 X 6.22 X 2.39MM. IS NOT A SCRAP OF ELECTRICAL EQUIPMENT. USED IN ELECTRICAL ENGINEERING | 0.01 | 7.62 | China | Hayes | YUE COMPLEX SERVICE SOLUTIONS JSC |