1/29/2022 | 8541210000 | SEMICONDUCTOR DEVICE:NPN-CHANNEL TRANSISTOR. USED IN ELECTRICAL ENGINEERING. MAXIMUM DRAIN SOURCE VOLTAGE 8 V, MAXIMUM CONTINUOUS DRAIN CURRENT 3.7 A. SCATTERING POWER 960MW. DIMENSIONS: 3.04 X 1.4 X 1.01MM. | 0.08 | 42.94 | China | Hayes | YUE COMPLEX SERVICE SOLUTIONS JSC |
1/17/2022 | 8541210000 | SEMICONDUCTOR DEVICE: NPN/PNP-CHANNEL TRANSISTOR. POWER DISPERSION 200MW. VOLTAGE DRAIN-SOURCE 160V. CURRENT 200MA. IS NOT A SCRAP OF ELECTRICAL EQUIPMENT. USED IN ELECTRICAL ENGINEERING. | 0.04 | 28.53 | China | Hayes | YUE COMPLEX SERVICE SOLUTIONS JSC |
1/25/2022 | 8541210000 | FIELD TRANSISTOR WITH INDUCED P-CHANNEL WITH MAXIMUM POWER DISCIPTION OF 0.833 W. LIMIT VOLTAGE DRAIN-SOURCE -20 VOLTS. GATE-SOURCE VOLTAGE LIMIT 12 V. MAXIMUM CONTINUOUS DRAIN CURRENT -4.3 A. SEMICONDUCTOR TYPE - SILICON | 4.3 | 4226.53 | China | COWLUN | ELECTROKOM VPK LLC |
1/25/2022 | 8541210000 | FIELD TRANSISTOR WITH AN INDUCED N-CHANNEL WITH MAXIMUM POWER DISPOSION 0.83 W. LIMIT VOLTAGE DRAIN-SOURCE 30 VOLTS. CLIMATE VOLTAGE GATE-SOURCE 20 VOLTS. MAXIMUM CONTINUOUS DRAIN CURRENT 1.9 AMPS. TYPE OF SEMICONDUCTOR - | 1 | 1789.09 | China | COWLUN | ELECTROKOM VPK LLC |
1/27/2022 | 8541210000 | ELECTRONIC COMPONENTS: SILICON BIPOLAR TRANSISTOR WITH A COMMON BASE IS INTENDED FOR THE MANUFACTURE OF POWER SUPPLY AND UNINTERRUPTIBLE POWER SOURCES, AS WELL AS CONSTRUCTION OF MACHINE POWER SUPPLY CIRCUITS, SUPPLY VOLTAGE 160V DC, CURRENT 0 | 0 | 56.45 | China | PSKOV | VMK LLC |
1/13/2022 | 8541210000 | BIPOLAR TRANSISTORS (BJT), FOR AUTOMATIC MOUNTING ON THE BOARD, DOES NOT CONTAIN RADIOACTIVE SOURCES, DESIGNED TO WORK AT 5V VOLTAGE | 0.01 | 27.13 | China | MOSCOW RUSSIA | SYNERGIA DISTRIBUTION LLC |
1/13/2022 | 8541210000 | BIPOLAR TRANSISTORS (BJT), FOR AUTOMATIC MOUNTING ON THE BOARD, DOES NOT CONTAIN RADIOACTIVE SOURCES, DESIGNED TO WORK AT 5V VOLTAGE | 0.01 | 5.41 | China | MOSCOW RUSSIA | SYNERGIA DISTRIBUTION LLC |