1/24/2022 | 8541290000 | TRANSISTOR. THE PRODUCT IS A FIELD TRANSISTOR WITH A MAXIMUM DISPOSIVE POWER OF 150 W AND OPERATING VOLTAGE BETWEEN THE DRAIN-SOURCE UP TO 1200 V. MADE IN A HIP247 CASE. IS NOT A SCRAP OF ELECTRICAL EQUIPMENT. IMPORTED AS | 2 | 2657.22 | China | MOSCOW RUSSIA | PLANAR LLC |
1/21/2022 | 8541290000 | TRANSISTOR. THE PRODUCT IS A FIELD TRANSISTOR WITH MAXIMUM DISPOSIVE POWER UP TO 62.5 W AND OPERATING VOLTAGE BETWEEN DRAIN-SOURCE UP TO 150 V. MADE IN A POWERPAK 1212-8W CASE. IS NOT A SCRAP OF ELECTRICAL EQUIPMENT. IMPORTED INTO | 0.13 | 431.88 | China | MOSCOW RUSSIA | PLANAR LLC |
1/19/2022 | 8541290000 | MOSFET, FOR AUTOMATIC MOUNTING ON THE BOARD, DOES NOT CONTAIN RADIOACTIVE SOURCES, DESIGNED TO WORK AT 16V VOLTAGE | 0.01 | 51.66 | China | MOSCOW RUSSIA | SYNERGIA DISTRIBUTION LLC |
1/29/2022 | 8541290000 | SEMICONDUCTOR DEVICE: N-CHANNEL MOSFET TRANSISTOR. MAXIMUM POWER DISSIPATION 75 W. DRAIN-SOURCE VOLTAGE 100 V. DIMENSIONS 6.35 X 5.4 X 0.95MM. IS NOT A SCRAP OF ELECTRICAL EQUIPMENT. USED IN ELECTRICAL ENGINEERING | 0.04 | 25.42 | China | Hayes | YUE COMPLEX SERVICE SOLUTIONS JSC |
1/28/2022 | 8541290000 | SEMICONDUCTOR DEVICE: N-CHANNEL TRANSISTOR. VOLTAGE DRAIN-SOURCE 20V. SCATTERING POWER 1.6W. IS NOT A SCRAP OF ELECTRICAL EQUIPMENT. USED IN ELECTRICAL ENGINEERING | 0.01 | 4.53 | China | Hayes | YUE COMPLEX SERVICE SOLUTIONS JSC |
1/28/2022 | 8541290000 | SEMICONDUCTOR DEVICES: P-CHANNEL MOS TRANSISTOR. MAXIMUM POWER DISSIPATION 4.24 W. DRAIN-SOURCE VOLTAGE -100 V. CONTINUOUS DRAIN CURRENT 4.6A. DIMENSIONS 6.73 X 6.22 X 2.39MM. IS NOT A SCRAP OF ELECTRICAL EQUIPMENT. USED IN ELECTRICAL ENGINEERING | 0.01 | 7.62 | China | Hayes | YUE COMPLEX SERVICE SOLUTIONS JSC |
1/27/2022 | 8541290000 | SILICON CARBIDE N-CHANNEL MOSFET TRANSISTORS (MOSFET). THEY ARE CONTROLLED BY THE ELECTRIC FIELD THAT IS CREATED BY THE VOLTAGE APPLIED TO THE GATE RELATIVE TO THE SOURCE. NOT SCRAP OF ELECTRICAL EQUIPMENT. | 0 | 796.12 | China | ST LAURENT BLANGY FRANCE | DKM GROUP LLC |
1/31/2022 | 8541290000 | MOSFET TRANSISTORS: N-CHANNEL - IPN70R600P7SATMA1 SERIES COOLMOS P7 WITH A TOTAL DISPOSION POWER 6.9 W AND DRAIN-SOURCE BREAKDOWN VOLTAGE 700V. TYPE OF SEMICONDUCTOR - SILICON. | 5.78 | 4304.48 | China | ST PETERSBURG RUSSIA | ALR LLC |
1/24/2022 | 8541290000 | TRANSISTOR. THE PRODUCT IS A FIELD TRANSISTOR WITH MAXIMUM DISPOSIVE POWER UP TO 62.5 W AND OPERATING VOLTAGE BETWEEN DRAIN-SOURCE UP TO 150 V. MADE IN A POWERPAK 1212-8W CASE. IS NOT A SCRAP OF ELECTRICAL EQUIPMENT. IMPORTED INTO | 0.13 | 432.06 | China | MOSCOW RUSSIA | PLANAR LLC |
1/30/2022 | 8541290000 | MOSFET TRANSISTORS, NOT SCRAP EQUIPMENT, FIELD OF APPLICATION: TELECOM. EQUIPMENT; POWER DISPOSION:139 W, BREAKDOWN VOLTAGE DRAIN-SOURCE:60 V; | 0 | 202.27 | China | TSUEN WAN HONG KONG | SPHERE OF ELECTRONICS LLC |