1/29/2022 | 8541290000 | SEMICONDUCTOR DEVICE: N-CHANNEL MOSFET TRANSISTOR. MAXIMUM POWER DISSIPATION 216 W. VOLTAGE COLLECTOR-EMMITTER 600 V. IS NOT A SCRAP OF ELECTRICAL EQUIPMENT. USED IN ELECTRICAL ENGINEERING | 0.05 | 44.23 | United States of America | Hayes | YUE COMPLEX SERVICE SOLUTIONS JSC |
1/26/2022 | 8541290000 | SEMICONDUCTOR DEVICES: BIPOLAR TRANSISTOR WITH INSULATED GATE. VOLTAGE COLLECTOR-EMMITTER 600V, MAXIMUM CONTINUOUS COLLECTOR CURRENT 30A. MAXIMUM POWER DISPOSION 178W. USED IN ELECTRICAL ENGINEERING | 0.01 | 12.74 | China | Hayes | YUE COMPLEX SERVICE SOLUTIONS JSC |
1/31/2022 | 8541210000 | BIPOLAR TRANSISTOR BC847CW SEMICONDUCTOR ELEMENT, NPN STRUCTURE, IN SC-70 CASE. MAXIMUM COLLECTOR-EMMITTER VOLTAGE: 45V MAXIMUM COLLECTOR DC CURRENT: 100mA OPERATING FREQUENCY: UP TO 100MHz OPERATING TEMPERATURE: -65:+150C 300000 PCS | 2.73 | 1898.18 | China | SHENZHEN CHINA | IE SiNitsyH Ilya AleksaHdrovich |
1/31/2022 | 8541210000 | MOSFET SI2301BDS-T1-E3 SEMICONDUCTOR ELEMENT, NPN STRUCTURE, IN SOT-23-3 CASE. MAXIMUM COLLECTOR-EMMITTER VOLTAGE: 20V MAXIMUM CURRENT: 2.4A OPERATING TEMPERATURE: -55:+150C 2000 PCS | 0.09 | 203.5 | China | SHENZHEN CHINA | IE SiNitsyH Ilya AleksaHdrovich |
1/17/2022 | 8541210000 | TRANSISTOR MODEL BFY740B-01 (P) - 20 PCS. THE PRODUCT IS A NPN TYPE BIPOLAR TRANSISTOR. DESIGNED FOR DEVICES WITH LOW CURRENT CONSUMPTION WITH A MAXIMUM POWER DISSIPATION OF 120 MW. VOLTAGE COLLECTOR - EMITTER UP TO 4 VOLTS. NOT | 0.2 | 17679.7 | Germany | LISBON AIRPORT | PLANAR LLC |
1/29/2022 | 8541290000 | SEMICONDUCTOR DEVICES BIPOLAR TRANSISTOR. MAXIMUM POWER DISSIPATION 306 W. VOLTAGE COLLECTOR-EMMITTER 600 V. DIMENSIONS 16.13 X 5.21 X 21.1MM. IS NOT A SCRAP OF ELECTRICAL EQUIPMENT. USED IN ELECTRICAL ENGINEERING | 0.02 | 7.68 | China | Hayes | YUE COMPLEX SERVICE SOLUTIONS JSC |
1/29/2022 | 8541210000 | SEMICONDUCTOR DEVICES: N-CHANNEL TRANSISTOR. MAXIMUM POWER DISPOSION 200 MW. VOLTAGE COLLECTOR-EMTTER 50 V. CURRENT 200 MA. DIMENSIONS 2.2 X 1.35 X 1MM. IS NOT A SCRAP OF ELECTRICAL EQUIPMENT. USED IN ELECTRICAL ENGINEERING | 0.08 | 72 | China | Hayes | YUE COMPLEX SERVICE SOLUTIONS JSC |
1/25/2022 | 8541290000 | BIPOLAR TRANSISTOR (NPN) WITH INSULATED SEMICONDUCTOR GATE. MAXIMUM POWER DISSIPATION 1.35 W. MAXIMUM COLLECTOR-EMMITTER VOLTAGE 45 V. MAXIMUM EMMITTER JUNCTION VOLTAGE 5 V. COLLECTOR CURRENT 1?. TYPE OF SEMICONDUCTOR | 4.2 | 1472.39 | China | COWLUN | ELECTROKOM VPK LLC |
1/26/2022 | 8541290000 | BIPOLAR TRANSISTOR MAXIMUM POWER DISSIPATION (PD) 290 W, . MAXIMUM ALLOWABLE GATE-SOURCE VOLTAGE (VGS): 2.3 V, MAXIMUM ALLOWABLE DIRECT DRAIN CURRENT (ID): 80 A. COLLECTOR-EMMITTER VOLTAGE 600 V ART: FGH40N60SFDTU - 5000 PCS | 36.5 | 9203.8 | China | SMOLENSHCHINA | NEW ELECTRONIC COMPANY LLC |
1/31/2022 | 8541210000 | BIPOLAR TRANSISTOR BCR135W SEMICONDUCTOR ELEMENT, NPN STRUCTURE, IN SOT-323 CASE. MAXIMUM COLLECTOR-EMMITTER VOLTAGE: 50V MAXIMUM COLLECTOR DC CURRENT: 100MA OPERATING FREQUENCY: UP TO 100MHz OPERATING TEMPERATURE: -65:+150C 700 PCS | 0.08 | 102.39 | China | SHENZHEN CHINA | IE SiNitsyH Ilya AleksaHdrovich |