1/31/2022 | 8541210000 | BIPOLAR TRANSISTOR BC847CW SEMICONDUCTOR ELEMENT, NPN STRUCTURE, IN SC-70 CASE. MAXIMUM COLLECTOR-EMMITTER VOLTAGE: 45V MAXIMUM COLLECTOR DC CURRENT: 100mA OPERATING FREQUENCY: UP TO 100MHz OPERATING TEMPERATURE: -65:+150C 300000 PCS | 2.73 | 1898.18 | China | SHENZHEN CHINA | IE SiNitsyH Ilya AleksaHdrovich |
1/31/2022 | 8541210000 | MOSFET SI2301BDS-T1-E3 SEMICONDUCTOR ELEMENT, NPN STRUCTURE, IN SOT-23-3 CASE. MAXIMUM COLLECTOR-EMMITTER VOLTAGE: 20V MAXIMUM CURRENT: 2.4A OPERATING TEMPERATURE: -55:+150C 2000 PCS | 0.09 | 203.5 | China | SHENZHEN CHINA | IE SiNitsyH Ilya AleksaHdrovich |
1/17/2022 | 8541210000 | TRANSISTOR MODEL BFY740B-01 (P) - 20 PCS. THE PRODUCT IS A NPN TYPE BIPOLAR TRANSISTOR. DESIGNED FOR DEVICES WITH LOW CURRENT CONSUMPTION WITH A MAXIMUM POWER DISSIPATION OF 120 MW. VOLTAGE COLLECTOR - EMITTER UP TO 4 VOLTS. NOT | 0.2 | 17679.7 | Germany | LISBON AIRPORT | PLANAR LLC |
1/29/2022 | 8541210000 | SEMICONDUCTOR DEVICES: N-CHANNEL TRANSISTOR. MAXIMUM POWER DISPOSION 200 MW. VOLTAGE COLLECTOR-EMTTER 50 V. CURRENT 200 MA. DIMENSIONS 2.2 X 1.35 X 1MM. IS NOT A SCRAP OF ELECTRICAL EQUIPMENT. USED IN ELECTRICAL ENGINEERING | 0.08 | 72 | China | Hayes | YUE COMPLEX SERVICE SOLUTIONS JSC |
1/31/2022 | 8541210000 | BIPOLAR TRANSISTOR BCR135W SEMICONDUCTOR ELEMENT, NPN STRUCTURE, IN SOT-323 CASE. MAXIMUM COLLECTOR-EMMITTER VOLTAGE: 50V MAXIMUM COLLECTOR DC CURRENT: 100MA OPERATING FREQUENCY: UP TO 100MHz OPERATING TEMPERATURE: -65:+150C 700 PCS | 0.08 | 102.39 | China | SHENZHEN CHINA | IE SiNitsyH Ilya AleksaHdrovich |
1/31/2022 | 8541210000 | TRANSISTOR PMV20ENR SEMICONDUCTOR ELEMENT, NPN STRUCTURE, IN SOT-23-3 CASE. MAXIMUM COLLECTOR-EMMITTER VOLTAGE: 30V MAXIMUM COLLECTOR DC CURRENT: 5.2A OPERATING FREQUENCY: UP TO 100MHz OPERATING TEMPERATURE: -65:+150C 60 PCS | 0 | 17.88 | China | SHENZHEN CHINA | IE SiNitsyH Ilya AleksaHdrovich |
1/31/2022 | 8541210000 | BIPOLAR TRANSISTOR BCR135W SEMICONDUCTOR ELEMENT, NPN STRUCTURE, IN SOT-323 CASE. MAXIMUM COLLECTOR-EMMITTER VOLTAGE: 50V MAXIMUM COLLECTOR DC CURRENT: 100MA OPERATING FREQUENCY: UP TO 100MHz OPERATING TEMPERATURE: -65:+150C 200 PCS | 0.02 | 30.9 | China | SHENZHEN CHINA | IE SiNitsyH Ilya AleksaHdrovich |
1/28/2022 | 8541210000 | SEMICONDUCTOR DEVICES: NPN-CHANNEL MOS-TRANSISTOR. MAXIMUM POWER DISPOSION 200 MW. VOLTAGE COLLECTOR-EMMITTER 50 V. DRAIN CURRENT 150MA. DIMENSIONS 2 X 1.25 X 0.9MM. IS NOT A SCRAP OF ELECTRICAL EQUIPMENT. USED IN ELECTRICAL ENGINEERING | 0 | 9.42 | Thailand | Hayes | YUE COMPLEX SERVICE SOLUTIONS JSC |
1/25/2022 | 8541210000 | TRANSISTOR. PRODUCT IS A NPN-TYPE BIPOLAR TRANSISTOR WITH MAXIMUM DISPOSION POWER 0.5 W AND OPERATING VOLTAGE BETWEEN COLLECTOR-EMMITTER UP TO 50 V. MADE IN A TO-18 CASE WITH CONTACTS FOR THROUGH-THROUGH MOUNTING. | 0.01 | 62.04 | Philippines | MOSCOW RUSSIA | PLANAR LLC |