1/29/2022 | 8541290000 | SEMICONDUCTOR DEVICE: N-CHANNEL MOSFET TRANSISTOR. MAXIMUM POWER DISSIPATION 216 W. VOLTAGE COLLECTOR-EMMITTER 600 V. IS NOT A SCRAP OF ELECTRICAL EQUIPMENT. USED IN ELECTRICAL ENGINEERING | 0.05 | 44.23 | United States of America | Hayes | YUE COMPLEX SERVICE SOLUTIONS JSC |
1/26/2022 | 8541290000 | SEMICONDUCTOR DEVICES: BIPOLAR TRANSISTOR WITH INSULATED GATE. VOLTAGE COLLECTOR-EMMITTER 600V, MAXIMUM CONTINUOUS COLLECTOR CURRENT 30A. MAXIMUM POWER DISPOSION 178W. USED IN ELECTRICAL ENGINEERING | 0.01 | 12.74 | China | Hayes | YUE COMPLEX SERVICE SOLUTIONS JSC |
1/29/2022 | 8541290000 | SEMICONDUCTOR DEVICES BIPOLAR TRANSISTOR. MAXIMUM POWER DISSIPATION 306 W. VOLTAGE COLLECTOR-EMMITTER 600 V. DIMENSIONS 16.13 X 5.21 X 21.1MM. IS NOT A SCRAP OF ELECTRICAL EQUIPMENT. USED IN ELECTRICAL ENGINEERING | 0.02 | 7.68 | China | Hayes | YUE COMPLEX SERVICE SOLUTIONS JSC |
1/25/2022 | 8541290000 | BIPOLAR TRANSISTOR (NPN) WITH INSULATED SEMICONDUCTOR GATE. MAXIMUM POWER DISSIPATION 1.35 W. MAXIMUM COLLECTOR-EMMITTER VOLTAGE 45 V. MAXIMUM EMMITTER JUNCTION VOLTAGE 5 V. COLLECTOR CURRENT 1?. TYPE OF SEMICONDUCTOR | 4.2 | 1472.39 | China | COWLUN | ELECTROKOM VPK LLC |
1/26/2022 | 8541290000 | BIPOLAR TRANSISTOR MAXIMUM POWER DISSIPATION (PD) 290 W, . MAXIMUM ALLOWABLE GATE-SOURCE VOLTAGE (VGS): 2.3 V, MAXIMUM ALLOWABLE DIRECT DRAIN CURRENT (ID): 80 A. COLLECTOR-EMMITTER VOLTAGE 600 V ART: FGH40N60SFDTU - 5000 PCS | 36.5 | 9203.8 | China | SMOLENSHCHINA | NEW ELECTRONIC COMPANY LLC |
1/13/2022 | 8541290000 | SEMICONDUCTOR DEVICE:NPN-CHANNEL TRANSISTOR. MAXIMUM POWER DISSIPATION 1.2 W. VOLTAGE COLLECTOR-EMMITTER 40 V. DIMENSIONS 5 X 4 X 1.5MM. IS NOT A SCRAP OF ELECTRICAL EQUIPMENT. USED IN ELECTRICAL ENGINEERING | 0.01 | 27.57 | Taiwan | Hayes | YUE COMPLEX SERVICE SOLUTIONS JSC |