| 1/28/2022 | 8541100009 | INTERFERENCE SUPPRESSION DIODE IS USED AS SPARE PARTS AND CONSUMABLE MATERIALS DURING ROUTINE MAINTENANCE OF POWER GENERATOR INSTALLATIONS WITH INTERNAL COMBUSTION GAS ENGINE, NON-MILITARY PURPOSE | 0.02 | 22.52 | Czechia | Nuremberg Germany | ENERGOTECHSERVICE LLC |
| 1/28/2022 | 8541290000 | SEMICONDUCTOR DEVICE: N-CHANNEL MOSFET TRANSISTOR. VOLTAGE DRAIN-SOURCE 1000V. SCATTERING POWER 100W. CURRENT 24A. IS NOT A SCRAP OF ELECTRICAL EQUIPMENT. USED IN ELECTRICAL ENGINEERING | 0.01 | 16.67 | United States of America | Hayes | YUE COMPLEX SERVICE SOLUTIONS JSC |
| 1/28/2022 | 8541290000 | SEMICONDUCTOR DEVICE: N-CHANNEL MOSFET TRANSISTOR. POWER DISPOSION 69 W. VOLTAGE DRAIN-SOURCE 100 V. CURRENT 30A. SIZE 5.35 X 6.25 X 1.1MM. IS NOT A SCRAP OF ELECTRICAL EQUIPMENT. USED IN ELECTRICAL ENGINEERING | 0 | 8.43 | Malaysia | Hayes | YUE COMPLEX SERVICE SOLUTIONS JSC |
| 1/28/2022 | 8541210000 | SEMICONDUCTOR DEVICES: NPN-CHANNEL MOS-TRANSISTOR. MAXIMUM POWER DISPOSION 200 MW. VOLTAGE COLLECTOR-EMMITTER 50 V. DRAIN CURRENT 150MA. DIMENSIONS 2 X 1.25 X 0.9MM. IS NOT A SCRAP OF ELECTRICAL EQUIPMENT. USED IN ELECTRICAL ENGINEERING | 0 | 9.42 | Thailand | Hayes | YUE COMPLEX SERVICE SOLUTIONS JSC |
| 1/28/2022 | 8541210000 | SEMICONDUCTOR DEVICES: DIGITAL TRANSISTOR. MAXIMUM POWER DISPOSION 200 MW. VOLTAGE 50 V. DIMENSIONS 2.9 X 1.6 X 1.1MM. IS NOT A SCRAP OF ELECTRICAL EQUIPMENT. USED IN ELECTRICAL ENGINEERING | 0 | 6.19 | Philippines | Hayes | YUE COMPLEX SERVICE SOLUTIONS JSC |
| 1/13/2022 | 8541290000 | SEMICONDUCTOR DEVICE: N-CHANNEL MOSFET TRANSISTOR. POWER DISPOSION 26W. MAXIMUM VOLTAGE 20 V. CURRENT 20A. SERIES OPTIMOS 3. USED IN ELECTRICAL ENGINEERING | 0.01 | 5.18 | Malaysia | Hayes | YUE COMPLEX SERVICE SOLUTIONS JSC |
| 1/13/2022 | 8541290000 | SEMICONDUCTOR DEVICES: PNP-CHANNEL MOS-TRANSISTOR. NOMINAL VOLTAGE -100 V. CURRENT -5A. DIMENSIONS 2.3 X 6.5 X 5.5MM. POWER 1W. IS NOT A SCRAP OF ELECTRICAL EQUIPMENT. USED IN ELECTRICAL ENGINEERING | 0.01 | 3.86 | Japan | Hayes | YUE COMPLEX SERVICE SOLUTIONS JSC |
| 1/13/2022 | 8541290000 | SEMICONDUCTOR DEVICE:NPN-CHANNEL TRANSISTOR. MAXIMUM POWER DISSIPATION 1.2 W. VOLTAGE COLLECTOR-EMMITTER 40 V. DIMENSIONS 5 X 4 X 1.5MM. IS NOT A SCRAP OF ELECTRICAL EQUIPMENT. USED IN ELECTRICAL ENGINEERING | 0.01 | 27.57 | Taiwan | Hayes | YUE COMPLEX SERVICE SOLUTIONS JSC |
| 1/13/2022 | 8541290000 | SEMICONDUCTOR DEVICES: POWER N-CHANNEL MOS TRANSISTOR. USED IN ELECTRICAL ENGINEERING. VOLTAGE DRAIN-SOURCE 600V, CURRENT 72A. POWER DISPOSION 1.04KW. DIMENSIONS: 38.2 X 25.07 X 9.6MM | 0.07 | 41.45 | South Korea | Hayes | YUE COMPLEX SERVICE SOLUTIONS JSC |
| 1/13/2022 | 8541290000 | SEMICONDUCTOR DEVICE: N-CHANNEL MOSFET TRANSISTOR. MAXIMUM DRAIN-SOURCE VOLTAGE 250 V. DRAIN CURRENT 33 A. POWER 37W. DIMENSIONS 15.9 X 4.8 X 19MM. IS NOT A SCRAP OF ELECTRICAL EQUIPMENT. USED IN ELECTRICAL ENGINEERING | 0.01 | 7.77 | China | Hayes | YUE COMPLEX SERVICE SOLUTIONS JSC |