| 1/29/2022 | 8541490000 | SEMICONDUCTOR LIGHT-SENSITIVE DEVICES: PHOTODIODE. REVERSE VOLTAGE 50 V. POWER DISPOSION 100MW. USED IN ELECTRICAL ENGINEERING | 0.1 | 245.28 | Malaysia | Hayes | YUE COMPLEX SERVICE SOLUTIONS JSC |
| 1/26/2022 | 8541290000 | SEMICONDUCTOR DEVICES: N-CHANNEL MOS TRANSISTOR. MAXIMUM POWER DISSIPATION 96 W. VOLTAGE DRAIN-SOURCE +/-20V. CURRENT 100A. DIMENSIONS 6.1 X 5.35 X 1.1MM. IS NOT A SCRAP OF ELECTRICAL EQUIPMENT. USED IN ELECTRICAL ENGINEERING | 0.01 | 23.54 | Malaysia | Hayes | YUE COMPLEX SERVICE SOLUTIONS JSC |
| 1/23/2022 | 8541210000 | SEMICONDUCTOR DEVICE: P-CHANNEL MOSFET TRANSISTOR. USED IN ELECTRICAL ENGINEERING. VOLTAGE -250V, CURRENT -0.14A. SCATTERING POWER 0.5W. DIMENSIONS: 3 X 1.6 X 1.1MM | 0.01 | 21.03 | Malaysia | Hayes | YUE COMPLEX SERVICE SOLUTIONS JSC |
| 1/13/2022 | 8541290000 | SEMICONDUCTOR DEVICE: N-CHANNEL MOSFET TRANSISTOR. POWER DISPOSION 26W. MAXIMUM VOLTAGE 20 V. CURRENT 20A. SERIES OPTIMOS 3. USED IN ELECTRICAL ENGINEERING | 0.01 | 5.18 | Malaysia | Hayes | YUE COMPLEX SERVICE SOLUTIONS JSC |
| 1/28/2022 | 8541290000 | SEMICONDUCTOR DEVICE: N-CHANNEL MOSFET TRANSISTOR. POWER DISPOSION 69 W. VOLTAGE DRAIN-SOURCE 100 V. CURRENT 30A. SIZE 5.35 X 6.25 X 1.1MM. IS NOT A SCRAP OF ELECTRICAL EQUIPMENT. USED IN ELECTRICAL ENGINEERING | 0 | 8.43 | Malaysia | Hayes | YUE COMPLEX SERVICE SOLUTIONS JSC |