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Latest Russia Import Data of Textile under HS Code 8541 from China

Get latest Russia Import Data of textile under HS Code 05010000 based on shipping from China. Find detailed Russia imports from China with Unit, Price, Buyer name, Port of Unloading & shipment information. Align your business to Russia Market using an impactful data-driven strategy.

DateHS CodeProduct DetailsNet WeightTotal Value (USD)CountryShipment PlaceBuyer
1/9/20228541210000TRANSISTORS, POWER DISSIPATION 0.3 W, GENERAL INDUSTRIAL PURPOSE FOR INSTALLATION IN ELECTRICAL ENGINEERING. EQUIPMENT NOT CONTAINING CRYPTOGRAPHIC MODULES, DRAG. METAL AND DRAG. STONES:0.9545.3ChinaMOSCOW  RUSSIATRION STROY LLC
1/22/20228541210000TRANSISTORS, POWER DISSIPATION 0.3 W, GENERAL INDUSTRIAL PURPOSE FOR INSTALLATION IN ELECTRICAL ENGINEERING. EQUIPMENT NOT CONTAINING CRYPTOGRAPHIC MODULES, DRAG. METAL AND DRAG. STONES:0.68173.87ChinaMOSCOW  RUSSIATRION STROY LLC
1/27/20228541210000TRANSISTORS, POWER DISSIPATION 0.3 W, GENERAL INDUSTRIAL PURPOSE FOR INSTALLATION IN ELECTRICAL ENGINEERING. EQUIPMENT NOT CONTAINING CRYPTOGRAPHIC MODULES, DRAG. METAL AND DRAG. STONES:0.772219.05ChinaMOSCOW  RUSSIATRION STROY LLC
1/29/20228541290000SEMICONDUCTOR DEVICE: N-CHANNEL MOSFET TRANSISTOR. MAXIMUM POWER DISSIPATION 75 W. DRAIN-SOURCE VOLTAGE 100 V. DIMENSIONS 6.35 X 5.4 X 0.95MM. IS NOT A SCRAP OF ELECTRICAL EQUIPMENT. USED IN ELECTRICAL ENGINEERING0.0425.42ChinaHayesYUE COMPLEX SERVICE SOLUTIONS JSC
1/28/20228541290000SEMICONDUCTOR DEVICE: N-CHANNEL TRANSISTOR. VOLTAGE DRAIN-SOURCE 20V. SCATTERING POWER 1.6W. IS NOT A SCRAP OF ELECTRICAL EQUIPMENT. USED IN ELECTRICAL ENGINEERING0.014.53ChinaHayesYUE COMPLEX SERVICE SOLUTIONS JSC
1/28/20228541290000SEMICONDUCTOR DEVICES: P-CHANNEL MOS TRANSISTOR. MAXIMUM POWER DISSIPATION 4.24 W. DRAIN-SOURCE VOLTAGE -100 V. CONTINUOUS DRAIN CURRENT 4.6A. DIMENSIONS 6.73 X 6.22 X 2.39MM. IS NOT A SCRAP OF ELECTRICAL EQUIPMENT. USED IN ELECTRICAL ENGINEERING0.017.62ChinaHayesYUE COMPLEX SERVICE SOLUTIONS JSC
1/26/20228541290000SEMICONDUCTOR DEVICES: BIPOLAR TRANSISTOR WITH INSULATED GATE. VOLTAGE COLLECTOR-EMMITTER 600V, MAXIMUM CONTINUOUS COLLECTOR CURRENT 30A. MAXIMUM POWER DISPOSION 178W. USED IN ELECTRICAL ENGINEERING0.0112.74ChinaHayesYUE COMPLEX SERVICE SOLUTIONS JSC
1/26/20228541210000SEMICONDUCTOR DEVICES: PNP-CHANNEL MOSFET TRANSISTOR. VOLTAGE COLLECTOR-EMTTER -45V, CURRENT -500MA. SCATTERING POWER 0.31W. DIMENSIONS: 3 X 1.4 X 1MM. USED IN ELECTRICAL ENGINEERING0.0115.39ChinaHayesYUE COMPLEX SERVICE SOLUTIONS JSC
1/26/20228541290000SEMICONDUCTOR DEVICES N-CHANNEL TRANSISTOR. POWER DISPOSION 190W. VOLTAGE COLLECTOR-EMTTER 600V. CURRENT 33A. IS NOT A SCRAP OF ELECTRICAL EQUIPMENT. USED IN ELECTRICAL ENGINEERING.1.151703.78ChinaHayesYUE COMPLEX SERVICE SOLUTIONS JSC
1/29/20228541210000SEMICONDUCTOR DEVICE:NPN-CHANNEL TRANSISTOR. USED IN ELECTRICAL ENGINEERING. MAXIMUM DRAIN SOURCE VOLTAGE 8 V, MAXIMUM CONTINUOUS DRAIN CURRENT 3.7 A. SCATTERING POWER 960MW. DIMENSIONS: 3.04 X 1.4 X 1.01MM.0.0842.94ChinaHayesYUE COMPLEX SERVICE SOLUTIONS JSC

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