1/21/2022 | 8541290000 | MODULES OF BIPOLAR TRANSISTORS WITH INSULATED GATE (IGBT) WITH DISPOSIVE POWER OF 1800 W. TYPE OF SEMICONDUCTOR SILICON. COLLECTOR-EMMITTER VOLTAGE 1700V, GATE-EMMITTER VOLTAGE 20V, CONTINUOUS COLLECTOR DC CURRENT 300A. SUITABLE FOR | 36.57 | 7340.57 | Hungary | YEKATERINBURG KOLTSOVO AIRPORT | URAL IMPORTER LIMITED |
1/9/2022 | 8541100009 | 1N4148WS SMALL SIZE SIGNAL DIODES - UNIVERSAL DIODES - NON-REPEAT MAX REVERSE VOLTAGE - 100 V - PERIODIC PEAK REVERSE VOLTAGE - 75 V - PERIODIC PEAK FORWARD CURRENT - 300 MA - CONTINUOUS FORWARD CURRENT - 150 | 0.26 | 31.58 | China | RYAZAN OBLAST | PK SKIF LLC |
1/28/2022 | 8541290000 | SEMICONDUCTOR DEVICES: P-CHANNEL MOS TRANSISTOR. MAXIMUM POWER DISSIPATION 4.24 W. DRAIN-SOURCE VOLTAGE -100 V. CONTINUOUS DRAIN CURRENT 4.6A. DIMENSIONS 6.73 X 6.22 X 2.39MM. IS NOT A SCRAP OF ELECTRICAL EQUIPMENT. USED IN ELECTRICAL ENGINEERING | 0.01 | 7.62 | China | Hayes | YUE COMPLEX SERVICE SOLUTIONS JSC |
1/26/2022 | 8541290000 | SEMICONDUCTOR DEVICES: BIPOLAR TRANSISTOR WITH INSULATED GATE (IGBT). VOLTAGE COLLECTOR-EMMITTER 650V, CONTINUOUS COLLECTOR CURRENT 80A. SCATTERING POWER 283W. SIZE 20.15 X 15.75 X 5.15MM, ELECTRICAL APPLICATION | 0.01 | 15.31 | China | Hayes | YUE COMPLEX SERVICE SOLUTIONS JSC |
1/28/2022 | 8541100009 | SEMICONDUCTOR DEVICE: RECTIFYING DIODE. PEAK REVERSE REPEATED VOLTAGE 600V. MAXIMUM CONTINUOUS FORWARD CURRENT 1A. SIZE 4.75 X 2.95 X 2.2MM. IS NOT A SCRAP OF ELECTRICAL EQUIPMENT. USED IN ELECTRICAL ENGINEERING | 0.01 | 21.41 | China | Hayes | YUE COMPLEX SERVICE SOLUTIONS JSC |
1/29/2022 | 8541210000 | BIPOLAR TRANSISTORS WITH PRESET BIAS CURRENT, 50 V COLLECTOR-EMMITTER VOLTAGE, 100 MA CONTINUOUS COLLECTOR CURRENT, 250 MW POWER DISSIPATION | 0.01 | 8.03 | China | ST PETERSBURG RUSSIA | NPK KOMPLEKT LLC |
1/28/2022 | 8541100009 | SEMICONDUCTOR DEVICE: SWITCHING DIODE, PEAK REVERSE REPEATED VOLTAGE 600V. MAXIMUM CONTINUOUS FORWARD CURRENT 15A, DIMENSIONS 6.73 X 6.22 X 2.26MM. IS NOT A SCRAP OF ELECTRICAL EQUIPMENT. USED IN ELECTRICAL ENGINEERING | 0.05 | 12.62 | China | Hayes | YUE COMPLEX SERVICE SOLUTIONS JSC |
1/18/2022 | 8541210000 | TRANSISTORS OTHER THAN PHOTOTRANSISTORS WITH LESS THAN 1 W: PRODUCT CATEGORY: BIPOLAR TRANSISTORS INPUT RESISTANCE: 67 MOHMS VDS - DRAIN-SOURCE BREAKDOWN VOLTAGE: 20 V CONTINUOUS COLLECTOR CURRENT: 3.3A | 0.36 | 544.78 | Thailand | SHENZHEN CHINA | SPARK TT LLC |
1/29/2022 | 8541210000 | SEMICONDUCTOR DEVICE:NPN-CHANNEL TRANSISTOR. USED IN ELECTRICAL ENGINEERING. MAXIMUM DRAIN SOURCE VOLTAGE 8 V, MAXIMUM CONTINUOUS DRAIN CURRENT 3.7 A. SCATTERING POWER 960MW. DIMENSIONS: 3.04 X 1.4 X 1.01MM. | 0.08 | 42.94 | China | Hayes | YUE COMPLEX SERVICE SOLUTIONS JSC |
1/31/2022 | 8541290000 | POWERFUL MOSFET TRANSISTORS: P-CHANNEL SERIES HEXFET MODEL IRLML5203TRPBF , WITH MAXIMUM DISPOSION POWER 1.25 W, DRAIN-SOURCE BREAKDOWN VOLTAGE 30V, CONTINUOUS DRAIN CURRENT 3A. TYPE OF SEMICONDUCTOR - SILICON. | 1.08 | 964.28 | Philippines | ST PETERSBURG RUSSIA | ALR LLC |