1/9/2022 | 8541100009 | 1N4148WS SMALL SIZE SIGNAL DIODES - UNIVERSAL DIODES - NON-REPEAT MAX REVERSE VOLTAGE - 100 V - PERIODIC PEAK REVERSE VOLTAGE - 75 V - PERIODIC PEAK FORWARD CURRENT - 300 MA - CONTINUOUS FORWARD CURRENT - 150 | 0.26 | 31.58 | China | RYAZAN OBLAST | PK SKIF LLC |
1/28/2022 | 8541290000 | SEMICONDUCTOR DEVICES: P-CHANNEL MOS TRANSISTOR. MAXIMUM POWER DISSIPATION 4.24 W. DRAIN-SOURCE VOLTAGE -100 V. CONTINUOUS DRAIN CURRENT 4.6A. DIMENSIONS 6.73 X 6.22 X 2.39MM. IS NOT A SCRAP OF ELECTRICAL EQUIPMENT. USED IN ELECTRICAL ENGINEERING | 0.01 | 7.62 | China | Hayes | YUE COMPLEX SERVICE SOLUTIONS JSC |
1/26/2022 | 8541290000 | SEMICONDUCTOR DEVICES: BIPOLAR TRANSISTOR WITH INSULATED GATE (IGBT). VOLTAGE COLLECTOR-EMMITTER 650V, CONTINUOUS COLLECTOR CURRENT 80A. SCATTERING POWER 283W. SIZE 20.15 X 15.75 X 5.15MM, ELECTRICAL APPLICATION | 0.01 | 15.31 | China | Hayes | YUE COMPLEX SERVICE SOLUTIONS JSC |
1/28/2022 | 8541100009 | SEMICONDUCTOR DEVICE: RECTIFYING DIODE. PEAK REVERSE REPEATED VOLTAGE 600V. MAXIMUM CONTINUOUS FORWARD CURRENT 1A. SIZE 4.75 X 2.95 X 2.2MM. IS NOT A SCRAP OF ELECTRICAL EQUIPMENT. USED IN ELECTRICAL ENGINEERING | 0.01 | 21.41 | China | Hayes | YUE COMPLEX SERVICE SOLUTIONS JSC |
1/29/2022 | 8541210000 | BIPOLAR TRANSISTORS WITH PRESET BIAS CURRENT, 50 V COLLECTOR-EMMITTER VOLTAGE, 100 MA CONTINUOUS COLLECTOR CURRENT, 250 MW POWER DISSIPATION | 0.01 | 8.03 | China | ST PETERSBURG RUSSIA | NPK KOMPLEKT LLC |
1/28/2022 | 8541100009 | SEMICONDUCTOR DEVICE: SWITCHING DIODE, PEAK REVERSE REPEATED VOLTAGE 600V. MAXIMUM CONTINUOUS FORWARD CURRENT 15A, DIMENSIONS 6.73 X 6.22 X 2.26MM. IS NOT A SCRAP OF ELECTRICAL EQUIPMENT. USED IN ELECTRICAL ENGINEERING | 0.05 | 12.62 | China | Hayes | YUE COMPLEX SERVICE SOLUTIONS JSC |
1/29/2022 | 8541210000 | SEMICONDUCTOR DEVICE:NPN-CHANNEL TRANSISTOR. USED IN ELECTRICAL ENGINEERING. MAXIMUM DRAIN SOURCE VOLTAGE 8 V, MAXIMUM CONTINUOUS DRAIN CURRENT 3.7 A. SCATTERING POWER 960MW. DIMENSIONS: 3.04 X 1.4 X 1.01MM. | 0.08 | 42.94 | China | Hayes | YUE COMPLEX SERVICE SOLUTIONS JSC |
1/25/2022 | 8541210000 | FIELD TRANSISTOR WITH INDUCED P-CHANNEL WITH MAXIMUM POWER DISCIPTION OF 0.833 W. LIMIT VOLTAGE DRAIN-SOURCE -20 VOLTS. GATE-SOURCE VOLTAGE LIMIT 12 V. MAXIMUM CONTINUOUS DRAIN CURRENT -4.3 A. SEMICONDUCTOR TYPE - SILICON | 4.3 | 4226.53 | China | COWLUN | ELECTROKOM VPK LLC |
1/25/2022 | 8541210000 | FIELD TRANSISTOR WITH AN INDUCED N-CHANNEL WITH MAXIMUM POWER DISPOSION 0.83 W. LIMIT VOLTAGE DRAIN-SOURCE 30 VOLTS. CLIMATE VOLTAGE GATE-SOURCE 20 VOLTS. MAXIMUM CONTINUOUS DRAIN CURRENT 1.9 AMPS. TYPE OF SEMICONDUCTOR - | 1 | 1789.09 | China | COWLUN | ELECTROKOM VPK LLC |
1/26/2022 | 8541290000 | SEMICONDUCTOR DEVICES: BIPOLAR TRANSISTOR WITH INSULATED GATE. VOLTAGE COLLECTOR-EMMITTER 600V, MAXIMUM CONTINUOUS COLLECTOR CURRENT 30A. MAXIMUM POWER DISPOSION 178W. USED IN ELECTRICAL ENGINEERING | 0.01 | 12.74 | China | Hayes | YUE COMPLEX SERVICE SOLUTIONS JSC |