| 1/21/2022 | 8541290000 | MODULES OF BIPOLAR TRANSISTORS WITH INSULATED GATE (IGBT) WITH DISPOSIVE POWER OF 1800 W. TYPE OF SEMICONDUCTOR SILICON. COLLECTOR-EMMITTER VOLTAGE 1700V, GATE-EMMITTER VOLTAGE 20V, CONTINUOUS COLLECTOR DC CURRENT 300A. SUITABLE FOR | 36.57 | 7340.57 | Hungary | YEKATERINBURG KOLTSOVO AIRPORT | URAL IMPORTER LIMITED |
| 1/28/2022 | 8541290000 | SEMICONDUCTOR DEVICES: P-CHANNEL MOS TRANSISTOR. MAXIMUM POWER DISSIPATION 4.24 W. DRAIN-SOURCE VOLTAGE -100 V. CONTINUOUS DRAIN CURRENT 4.6A. DIMENSIONS 6.73 X 6.22 X 2.39MM. IS NOT A SCRAP OF ELECTRICAL EQUIPMENT. USED IN ELECTRICAL ENGINEERING | 0.01 | 7.62 | China | Hayes | YUE COMPLEX SERVICE SOLUTIONS JSC |
| 1/26/2022 | 8541290000 | SEMICONDUCTOR DEVICES: BIPOLAR TRANSISTOR WITH INSULATED GATE (IGBT). VOLTAGE COLLECTOR-EMMITTER 650V, CONTINUOUS COLLECTOR CURRENT 80A. SCATTERING POWER 283W. SIZE 20.15 X 15.75 X 5.15MM, ELECTRICAL APPLICATION | 0.01 | 15.31 | China | Hayes | YUE COMPLEX SERVICE SOLUTIONS JSC |
| 1/31/2022 | 8541290000 | POWERFUL MOSFET TRANSISTORS: P-CHANNEL SERIES HEXFET MODEL IRLML5203TRPBF , WITH MAXIMUM DISPOSION POWER 1.25 W, DRAIN-SOURCE BREAKDOWN VOLTAGE 30V, CONTINUOUS DRAIN CURRENT 3A. TYPE OF SEMICONDUCTOR - SILICON. | 1.08 | 964.28 | Philippines | ST PETERSBURG RUSSIA | ALR LLC |
| 1/11/2022 | 8541290000 | TRANSISTORS EXCEPT PHOTOTRANSISTORS: PRODUCT CATEGORY: MOSFET CONTINUOUS CURRENT: 24 A RESISTANCE: 77.5 MOHMS GATE-SOURCE VOLTAGE: 20 V DISPOSAL POWER: 144 W. | 0.72 | 326.71 | Thailand | SHENZHEN CHINA | SPARK TT LLC |
| 1/26/2022 | 8541290000 | SEMICONDUCTOR DEVICES: BIPOLAR TRANSISTOR WITH INSULATED GATE. VOLTAGE COLLECTOR-EMMITTER 600V, MAXIMUM CONTINUOUS COLLECTOR CURRENT 30A. MAXIMUM POWER DISPOSION 178W. USED IN ELECTRICAL ENGINEERING | 0.01 | 12.74 | China | Hayes | YUE COMPLEX SERVICE SOLUTIONS JSC |