1/23/2022 | 8542326900 | INTEGRATED MICROCIRCUIT,MONOLITHIC,DIGITAL,MEMORY,FLASH-ES PROM,MEMORY VOLUME MORE THAN 512 MBIT, WITHOUT ENCRYPTION FUNCTION (CRYPTOGRAPHY), NOT SCRAP OF ELECTRICAL EQUIPMENT,FOR INDUSTRIAL ASSEMBLY OF SAMSUNG EQUIPMENT | 0.2 | 3587.5 | South Korea | MOSCOW RUSSIA | SAMSUNG ELECTRONICS RUS COMPANY LLC |
1/9/2022 | 8542327500 | INTEGRATED MICROCIRCUIT,MONOLITHIC,DIGITAL,MEMORY,ES PROM, WITHOUT ENCRYPTION FUNCTION (CRYPTOGRAPHY),NOT SCRAP OF ELECTRICAL EQUIPMENT,FOR INDUSTRIAL ASSEMBLY OF SAMSUNG EQUIPMENT | 0.63 | 815.7 | Japan | TOKYO | SAMSUNG ELECTRONICS RUS COMPANY LLC |
1/20/2022 | 8542326100 | INTEGRATED, MONOLITHIC MICROCIRCUITS, MEMORY, FLASH-ES PROM, MEMORY VOLUME NOT MORE THAN 512 Mbps, WITHOUT FUNCTIONS OF ENCRYPTION (CRYPTOGRAPHY), NOT SCRAP OF ELECTRICAL EQUIPMENT, FOR INDUSTRIAL ASSEMBLY OF SAMSUNG EQUIPMENT | 2.3 | 1483.47 | China | HONG KONG | SAMSUNG ELECTRONICS RUS COMPANY LLC |
1/23/2022 | 8542326100 | INTEGRATED, MONOLITHIC MICROCIRCUITS, MEMORY, FLASH-ES PROM, MEMORY VOLUME NOT MORE THAN 512 Mbps, WITHOUT FUNCTIONS OF ENCRYPTION (CRYPTOGRAPHY), NOT SCRAP OF ELECTRICAL EQUIPMENT, FOR INDUSTRIAL ASSEMBLY OF SAMSUNG EQUIPMENT | 0.54 | 757.22 | Taiwan | TAIPEI AIRPORT TAIWAN | SAMSUNG ELECTRONICS RUS COMPANY LLC |
1/23/2022 | 8542326100 | INTEGRATED, MONOLITHIC MICROCIRCUITS, MEMORY, FLASH-ES PROM, MEMORY VOLUME NOT MORE THAN 512 Mbps, WITHOUT FUNCTIONS OF ENCRYPTION (CRYPTOGRAPHY), NOT SCRAP OF ELECTRICAL EQUIPMENT, FOR INDUSTRIAL ASSEMBLY OF SAMSUNG EQUIPMENT | 0.54 | 521.62 | Taiwan | TAIPEI AIRPORT TAIWAN | SAMSUNG ELECTRONICS RUS COMPANY LLC |
1/27/2022 | 8542326900 | INTEGRATED CHIP,MONOLITHIC,DIGITAL,MEMORY,FLASH-ES PROM,MEMORY VOLUME MORE THAN 512 MBIT, WITHOUT ENCRYPTION FUNCTION (CRYPTOGRAPHY), NOT SCRAP OF ELECTRICAL EQUIPMENT,FOR INDUSTRIAL ASSEMBLY OF SAMSUNG EQUIPMENT | 1.2 | 17942.9 | South Korea | INCHHON SEOUL | SAMSUNG ELECTRONICS RUS COMPANY LLC |
1/27/2022 | 8542326900 | INTEGRATED CHIP,MONOLITHIC,DIGITAL,MEMORY,FLASH-ES PROM,MEMORY VOLUME MORE THAN 512 MBIT, WITHOUT ENCRYPTION FUNCTION (CRYPTOGRAPHY), NOT SCRAP OF ELECTRICAL EQUIPMENT,FOR INDUSTRIAL ASSEMBLY OF SAMSUNG EQUIPMENT | 4.65 | 75329.6 | South Korea | INCHHON SEOUL | SAMSUNG ELECTRONICS RUS COMPANY LLC |
1/31/2022 | 8542326100 | INTEGRATED MICROCIRCUIT,MONOLITHIC,DIGITAL,MEMORY,FLASH-ES PROM,MEMORY VOLUME NOT MORE THAN 512MBIT, WITHOUT ENCRYPTION FUNCTION (CRYPTOGRAPHY),NOT SCRAP OF ELECTRICAL EQUIPMENT,FOR INDUSTRIAL ASSEMBLY OF SAMSUNG EQUIPMENT | 0.79 | 783.56 | China | HONG KONG | SAMSUNG ELECTRONICS RUS COMPANY LLC |
1/25/2022 | 8542327500 | INTEGRATED MICROCIRCUIT,MONOLITHIC,DIGITAL,MEMORY,ES PROM, WITHOUT ENCRYPTION FUNCTION (CRYPTOGRAPHY),NOT SCRAP OF ELECTRICAL EQUIPMENT,FOR INDUSTRIAL ASSEMBLY OF SAMSUNG EQUIPMENT | 2.84 | 3834.69 | China | SHANGHA CHINA | SAMSUNG ELECTRONICS RUS COMPANY LLC |
1/25/2022 | 8542326100 | INTEGRATED MICROCIRCUIT,MONOLITHIC,DIGITAL,MEMORY,FLASH-ES PROM,MEMORY VOLUME NOT MORE THAN 512MBIT, WITHOUT ENCRYPTION FUNCTION (CRYPTOGRAPHY),NOT SCRAP OF ELECTRICAL EQUIPMENT,FOR INDUSTRIAL ASSEMBLY OF SAMSUNG EQUIPMENT | 0.9 | 367.36 | China | SHANGHA CHINA | SAMSUNG ELECTRONICS RUS COMPANY LLC |