1/20/2022 | 8542326100 | INTEGRATED, MONOLITHIC MICROCIRCUITS, MEMORY, FLASH-ES PROM, MEMORY VOLUME NOT MORE THAN 512 Mbps, WITHOUT FUNCTIONS OF ENCRYPTION (CRYPTOGRAPHY), NOT SCRAP OF ELECTRICAL EQUIPMENT, FOR INDUSTRIAL ASSEMBLY OF SAMSUNG EQUIPMENT | 2.3 | 1483.47 | China | HONG KONG | SAMSUNG ELECTRONICS RUS COMPANY LLC |
1/31/2022 | 8542326100 | INTEGRATED MICROCIRCUIT,MONOLITHIC,DIGITAL,MEMORY,FLASH-ES PROM,MEMORY VOLUME NOT MORE THAN 512MBIT, WITHOUT ENCRYPTION FUNCTION (CRYPTOGRAPHY),NOT SCRAP OF ELECTRICAL EQUIPMENT,FOR INDUSTRIAL ASSEMBLY OF SAMSUNG EQUIPMENT | 0.79 | 783.56 | China | HONG KONG | SAMSUNG ELECTRONICS RUS COMPANY LLC |
1/25/2022 | 8542327500 | INTEGRATED MICROCIRCUIT,MONOLITHIC,DIGITAL,MEMORY,ES PROM, WITHOUT ENCRYPTION FUNCTION (CRYPTOGRAPHY),NOT SCRAP OF ELECTRICAL EQUIPMENT,FOR INDUSTRIAL ASSEMBLY OF SAMSUNG EQUIPMENT | 2.84 | 3834.69 | China | SHANGHA CHINA | SAMSUNG ELECTRONICS RUS COMPANY LLC |
1/25/2022 | 8542326100 | INTEGRATED MICROCIRCUIT,MONOLITHIC,DIGITAL,MEMORY,FLASH-ES PROM,MEMORY VOLUME NOT MORE THAN 512MBIT, WITHOUT ENCRYPTION FUNCTION (CRYPTOGRAPHY),NOT SCRAP OF ELECTRICAL EQUIPMENT,FOR INDUSTRIAL ASSEMBLY OF SAMSUNG EQUIPMENT | 0.9 | 367.36 | China | SHANGHA CHINA | SAMSUNG ELECTRONICS RUS COMPANY LLC |
1/14/2022 | 8542326100 | INTEGRATED MICROCIRCUIT,MONOLITHIC,DIGITAL,MEMORY,FLASH-ES PROM WITHOUT ENCRYPTION FUNCTION (CRYPTOGRAPHY), NOT SCRAP OF ELECTRICAL EQUIPMENT,FOR INDUSTRIAL ASSEMBLY OF SAMSUNG EQUIPMENT | 1.8 | 752.08 | China | SHANGHA CHINA | SAMSUNG ELECTRONICS RUS COMPANY LLC |
1/19/2022 | 8542326100 | INTEGRATED MICROCIRCUIT,MONOLITHIC,DIGITAL,MEMORY,FLASH-ES PROM,MEMORY VOLUME 4 Mbit, WITHOUT ENCRYPTION FUNCTION (CRYPTOGRAPHY), NOT SCRAP OF ELECTRICAL EQUIPMENT,FOR INDUSTRIAL ASSEMBLY OF SAMSUNG EQUIPMENT | 13.62 | 14706.5 | China | SHANGHA CHINA | SAMSUNG ELECTRONICS RUS COMPANY LLC |