1/21/2022 | 8542326900 | MONOLITHIC INTEGRAL CIRCUIT. THE PRODUCT IS A FLASH MEMORY WITH A VOLUME OF 16 GB AND A FREQUENCY OF UP TO 200 MHz. MADE IN THE FORM OF A MONOLITHIC INTEGRAL CIRCUIT WITH OPERATING VOLTAGE UP TO 3.6 V IN A 153-PIN TFBGA CASE. | 0.15 | 1490.1 | China | MOSCOW RUSSIA | PLANAR LLC |
1/31/2022 | 8542326900 | ELECTRONIC INTEGRAL CIRCUIT. THE PRODUCT IS A 2 GB FLASH MEMORY WITH A DATA TRANSMISSION BUS OF 8 BIT AND A READ/WRITE TIME OF 20 NS. MADE IN THE FORM OF A MONOLITHIC INTEGRAL CIRCUIT WITH OPERATING VOLTAGE UP TO 3.6 V IN A SOT C 48 CASE | 2.2 | 5938.5 | Taiwan | MOSCOW RUSSIA | PLANAR LLC |
1/21/2022 | 8542326900 | MONOLITHIC INTEGRAL CIRCUIT. THE PRODUCT IS A FLASH MEMORY WITH A VOLUME OF 32 GB AND A FREQUENCY OF UP TO 52 MHz. MADE IN THE FORM OF A MONOLITHIC INTEGRAL CIRCUIT WITH OPERATING VOLTAGE UP TO 3.6 V IN A TBGA CASE WITH 100 CONTACTS. | 0.01 | 210.39 | Singapore | MOSCOW RUSSIA | PLANAR LLC |
1/12/2022 | 8542326900 | ELECTRONIC INTEGRAL MONOLITHIC MICROCIRCUIT - A FLASH-EEPROM (NOR) MEMORY DEVICE WITH A MEMORY OF 2 GBIT. (OPERATING TEMPERATURE RANGE: -40...+85 C) (NOT HAZARDOUS WASTE) | 0.01 | 87.66 | Thailand | ST PETERSBURG RUSSIA | VOSTOK JSC |
1/10/2022 | 8542326900 | ELECTRICALLY Erasable ROM ROM INTEGRAL MICROCHEM VOLTAGE 1.45 V OPERATING TEMPERATURE FROM - 40 TO + 95 2 GB | 0.01 | 103.12 | Taiwan | ST PETERSBURG RUSSIA | ALTRABETA LLC |
1/27/2022 | 8542326900 | ELECTRICALLY Erasable ROM ROM 1.26 V OPERATING TEMPERATURE FROM 0 TO +95 8 GB | 0.02 | 125.78 | Taiwan | ST PETERSBURG RUSSIA | ALTRABETA LLC |
1/31/2022 | 8542326900 | ELECTRICALLY Erasable ROM ROM INTEGRAL MICROCHEM VOLTAGE 1.45 V OPERATING TEMPERATURE FROM - 40 TO + 95 2 GB | 0.01 | 101.72 | Taiwan | ST PETERSBURG RUSSIA | ALTRABETA LLC |
1/26/2022 | 8542326900 | ELECTRONIC INTEGRAL MONOLITHIC MICROCIRCUIT - MEMORY DEVICE TYPE FLASH EEPROM (NAND) WITH MEMORY 8 GBIT. (OPERATING TEMPERATURE RANGE: -40...+105 ?) (NOT HAZARDOUS WASTE) | 0.01 | 83.31 | Thailand | MANSFIELD CENTER | PM ELECTRONICS LLC |
1/26/2022 | 8542326900 | ELECTRONIC ITERAL SCHEME. THE PRODUCT IS A 4 GB FLASH MEMORY AND A DATA ACCESS TIME UP TO 25 ╡s. MADE IN THE FORM OF A MONOLITHIC INTEGRAL CIRCUIT WITH OPERATING VOLTAGE UP TO 3.6 V IN A TSOP CASE WITH 48 CONTACTS. IS NOT A SCRAP | 0.74 | 714.38 | Thailand | EKATERENBURG | PLANAR LLC |
1/24/2022 | 8542326900 | ELECTRONIC INTEGRAL MONOLITHIC MICROCIRCUIT - STORAGE DEVICE OF FLASH-ESPZU TYPE (EMMC FLASH DRIVE) WITH MEMORY 4 GBIT. (OPERATING TEMPERATURE RANGE: -40...+85 C) (NOT HAZARDOUS WASTE) | 0.06 | 128.15 | South Korea | MANSFIELD CENTER | PM ELECTRONICS LLC |