1/14/2022 | 8542326900 | ELECTRONIC INTEGRAL MONOLITHIC MICROCIRCUIT - MEMORY DEVICE TYPE FLASH EEPROM (NAND) WITH MEMORY 1 GBIT. (OPERATING TEMPERATURE RANGE: -40...+85 C) (NOT HAZARDOUS WASTE) | 0.03 | 28.82 | Taiwan | MANSFIELD CENTER | PM ELECTRONICS LLC |
1/17/2022 | 8542326900 | ELECTRONIC INTEGRAL MONOLITHIC MICROCIRCUIT - A MEMORY DEVICE (CONFIGURATION MEMORY) OF THE FLASH-EEPROM TYPE WITH A VOLUME OF 8 GBIT. (OPERATING TEMPERATURE RANGE: -40...+85 C) (NOT HAZARDOUS WASTE) | 0.17 | 969.56 | Taiwan | LEIPZIG AIRPORT | VOSTOK JSC |
1/31/2022 | 8542326900 | ELECTRONIC INTEGRAL CIRCUIT. THE PRODUCT IS A 2 GB FLASH MEMORY WITH A DATA TRANSMISSION BUS OF 8 BIT AND A READ/WRITE TIME OF 20 NS. MADE IN THE FORM OF A MONOLITHIC INTEGRAL CIRCUIT WITH OPERATING VOLTAGE UP TO 3.6 V IN A SOT C 48 CASE | 2.2 | 5938.5 | Taiwan | MOSCOW RUSSIA | PLANAR LLC |
1/10/2022 | 8542326900 | ELECTRICALLY Erasable ROM ROM INTEGRAL MICROCHEM VOLTAGE 1.45 V OPERATING TEMPERATURE FROM - 40 TO + 95 2 GB | 0.01 | 103.12 | Taiwan | ST PETERSBURG RUSSIA | ALTRABETA LLC |
1/27/2022 | 8542326900 | ELECTRICALLY Erasable ROM ROM 1.26 V OPERATING TEMPERATURE FROM 0 TO +95 8 GB | 0.02 | 125.78 | Taiwan | ST PETERSBURG RUSSIA | ALTRABETA LLC |
1/27/2022 | 8542326900 | ELECTRICALLY ERASEABLE PERMANENT ROM INTEGRAL MICROCIRCUIT VOLTAGE 3.6 V OPERATING TEMPERATURE FROM -40 TO +85 2 GB | 0.1 | 1973.49 | Taiwan | HONGKONG AIRPORT | ALTRABETA LLC |
1/26/2022 | 8542326900 | ELECTRICALLY ERASEABLE PERMANENT ROM INTEGRAL MICROCIRCUIT VOLTAGE 2 V OPERATING TEMPERATURE FROM - 40 TO + 85 1 GB | 0 | 61.87 | Taiwan | HONGKONG AIRPORT | ALTRABETA LLC |
1/26/2022 | 8542326900 | ELECTRICALLY ERASEABLE PERMANENT ROM INTEGRAL MICROCIRCUIT VOLTAGE 1.9 V OPERATING TEMPERATURE FROM - 40 TO + 95 2 GB | 0.06 | 166.63 | Taiwan | HONGKONG AIRPORT | ALTRABETA LLC |
1/31/2022 | 8542326900 | ELECTRICALLY Erasable ROM ROM INTEGRAL MICROCHEM VOLTAGE 1.45 V OPERATING TEMPERATURE FROM - 40 TO + 95 2 GB | 0.01 | 101.72 | Taiwan | ST PETERSBURG RUSSIA | ALTRABETA LLC |