1/24/2022 | 8541100009 | SCHOTTKY DIODE STPS1L30A IS A P-N JUNCTION MADE ON A SILICON CRYSTAL IN A PLASTIC CASE WITH TWO NICKEL TERMINALS. DOES NOT HAVE PHOTO SENSITIVITY. SURFACE MOUNTED. | 5.42 | 1285.71 | China | STAVROPOL DISTRICT S NEW BINARADKA | ENERGOMERA JSC |
1/28/2022 | 8541100009 | SEMICONDUCTOR DIODES ARE TWO-ELECTRODE DEVICES WITH ONE PN JUNCTION. ARE NOT LIGHT EMITTING. THEY ARE USED IN THE PRODUCTION OF RADIO EQUIPMENT FOR GENERAL INDUSTRIAL PURPOSE ARE NOT DIODE GROUNDING. MAXIMUM | 6.7 | 7788.46 | China | MOSCOW RUSSIA | PROMELKOM LLC |
1/24/2022 | 8541100009 | DIODE VS-10MQ060NTRPBF. 2-ELECTRODE SEMICONDUCTOR DEVICE WITH SINGLE-SIDE CONDUCTIVITY (WELL PASSES CURRENT THROUGH ITSELF IN ONE DIRECTION AND VERY BADLY IN THE OTHER). IS A PN JUNCTION MADE ON A SILICON CRYSTAL. NOT | 0.78 | 345.87 | China | STAVROPOL DISTRICT S NEW BINARADKA | ENERGOMERA JSC |
1/18/2022 | 8541100009 | SCHOTTKY DIODE STPS1L30A IS A P-N JUNCTION MADE ON A SILICON CRYSTAL IN A PLASTIC CASE WITH TWO NICKEL TERMINALS. DOES NOT HAVE PHOTO SENSITIVITY. SURFACE MOUNTED. | 10.15 | 2523 | China | STAVROPOL DISTRICT S NEW BINARADKA | ENERGOMERA JSC |
1/18/2022 | 8541100009 | DIODE VS-10MQ060NTRPBF. 2-ELECTRODE SEMICONDUCTOR DEVICE WITH SINGLE-SIDE CONDUCTIVITY (WELL PASSES THE CURRENT THROUGH ITSELF IN ONE DIRECTION AND VERY BADLY IN THE OTHER). IS A PN JUNCTION MADE ON A SILICON CRYSTAL. NOT | 0.78 | 348.23 | China | STAVROPOL DISTRICT S NEW BINARADKA | ENERGOMERA JSC |
1/10/2022 | 8541100009 | SCHOTTKY DIODE BAT54C,235. DIODE ASSEMBLY FROM TWO SCHOTTKY DIODES IN ONE CASE. IT IS TWO P-N JUNCTIONS WITH A COMMON CATHODE, INCLUDED IN A RECTANGULAR PLASTIC CASE, IS NOT PHOTO-SENSITIVE. THERE ARE 3 | 0.56 | 82.4 | China | STAVROPOL DISTRICT S NEW BINARADKA | ENERGOMERA JSC |
1/20/2022 | 8541100009 | DIODE ESDA6V1L. REPRESENTING TWO SILICON DIODES WITH CONNECTED ANODES, ENCOUNTERED IN A PLASTIC CASE WITH THREE OHMIC CONCLUSIONS, THE DIODE IS A P-N JUNCTION MADE ON A SILICON CRYSTAL. SET BY THE METHOD | 0.16 | 122.5 | China | STAVROPOL DISTRICT S NEW BINARADKA | ENERGOMERA JSC |
1/15/2022 | 8541100009 | SEMICONDUCTOR DIODES ARE TWO-ELECTRODE DEVICES WITH ONE PN JUNCTION. ARE NOT LIGHT EMITTING. THEY ARE USED IN THE PRODUCTION OF RADIO EQUIPMENT FOR GENERAL INDUSTRIAL PURPOSE ARE NOT DIODE GROUNDING. MAXIMUM | 0.51 | 601.7 | China | MOSCOW RUSSIA | PROMELKOM LLC |
1/10/2022 | 8541100009 | SCHOTTKY DIODE STPS1L30A IS A P-N JUNCTION MADE ON A SILICON CRYSTAL IN A PLASTIC CASE WITH TWO NICKEL TERMINALS. DOES NOT HAVE PHOTO SENSITIVITY. SURFACE MOUNTED. | 1.35 | 322.23 | China | STAVROPOL DISTRICT S NEW BINARADKA | ENERGOMERA JSC |
1/20/2022 | 8541100009 | DIODE SMAJ30A-TR. IS A PN JUNCTION MADE ON A SILICON PLATE. THE DIODE IS PACKED IN A PLASTIC CASE, FROM THE ENDS OF WHICH THERE ARE CONCLUSIONS FOR INSTALLATION ON THE BOARD. IS NOT PHOTO-SENSITIVE. APPLIED ON THE SIDE OF THE CATHODE | 0.98 | 238.7 | China | STAVROPOL DISTRICT S NEW BINARADKA | ENERGOMERA JSC |