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Latest Russia Import Data of Textile under HS Code 8541100009 from China

Get latest Russia Import Data of textile under HS Code 05010000 based on shipping from China. Find detailed Russia imports from China with Unit, Price, Buyer name, Port of Unloading & shipment information. Align your business to Russia Market using an impactful data-driven strategy.

DateHS CodeProduct DetailsNet WeightTotal Value (USD)CountryShipment PlaceBuyer
1/24/20228541100009SCHOTTKY DIODE STPS1L30A IS A P-N JUNCTION MADE ON A SILICON CRYSTAL IN A PLASTIC CASE WITH TWO NICKEL TERMINALS. DOES NOT HAVE PHOTO SENSITIVITY. SURFACE MOUNTED.5.421285.71ChinaSTAVROPOL DISTRICT S NEW BINARADKAENERGOMERA JSC
1/28/20228541100009SEMICONDUCTOR DIODES ARE TWO-ELECTRODE DEVICES WITH ONE PN JUNCTION. ARE NOT LIGHT EMITTING. THEY ARE USED IN THE PRODUCTION OF RADIO EQUIPMENT FOR GENERAL INDUSTRIAL PURPOSE ARE NOT DIODE GROUNDING. MAXIMUM6.77788.46ChinaMOSCOW  RUSSIAPROMELKOM LLC
1/24/20228541100009DIODE VS-10MQ060NTRPBF. 2-ELECTRODE SEMICONDUCTOR DEVICE WITH SINGLE-SIDE CONDUCTIVITY (WELL PASSES CURRENT THROUGH ITSELF IN ONE DIRECTION AND VERY BADLY IN THE OTHER). IS A PN JUNCTION MADE ON A SILICON CRYSTAL. NOT0.78345.87ChinaSTAVROPOL DISTRICT S NEW BINARADKAENERGOMERA JSC
1/18/20228541100009SCHOTTKY DIODE STPS1L30A IS A P-N JUNCTION MADE ON A SILICON CRYSTAL IN A PLASTIC CASE WITH TWO NICKEL TERMINALS. DOES NOT HAVE PHOTO SENSITIVITY. SURFACE MOUNTED.10.152523ChinaSTAVROPOL DISTRICT S NEW BINARADKAENERGOMERA JSC
1/18/20228541100009DIODE VS-10MQ060NTRPBF. 2-ELECTRODE SEMICONDUCTOR DEVICE WITH SINGLE-SIDE CONDUCTIVITY (WELL PASSES THE CURRENT THROUGH ITSELF IN ONE DIRECTION AND VERY BADLY IN THE OTHER). IS A PN JUNCTION MADE ON A SILICON CRYSTAL. NOT0.78348.23ChinaSTAVROPOL DISTRICT S NEW BINARADKAENERGOMERA JSC
1/10/20228541100009SCHOTTKY DIODE BAT54C,235. DIODE ASSEMBLY FROM TWO SCHOTTKY DIODES IN ONE CASE. IT IS TWO P-N JUNCTIONS WITH A COMMON CATHODE, INCLUDED IN A RECTANGULAR PLASTIC CASE, IS NOT PHOTO-SENSITIVE. THERE ARE 30.5682.4ChinaSTAVROPOL DISTRICT S NEW BINARADKAENERGOMERA JSC
1/20/20228541100009DIODE ESDA6V1L. REPRESENTING TWO SILICON DIODES WITH CONNECTED ANODES, ENCOUNTERED IN A PLASTIC CASE WITH THREE OHMIC CONCLUSIONS, THE DIODE IS A P-N JUNCTION MADE ON A SILICON CRYSTAL. SET BY THE METHOD0.16122.5ChinaSTAVROPOL DISTRICT S NEW BINARADKAENERGOMERA JSC
1/15/20228541100009SEMICONDUCTOR DIODES ARE TWO-ELECTRODE DEVICES WITH ONE PN JUNCTION. ARE NOT LIGHT EMITTING. THEY ARE USED IN THE PRODUCTION OF RADIO EQUIPMENT FOR GENERAL INDUSTRIAL PURPOSE ARE NOT DIODE GROUNDING. MAXIMUM0.51601.7ChinaMOSCOW  RUSSIAPROMELKOM LLC
1/10/20228541100009SCHOTTKY DIODE STPS1L30A IS A P-N JUNCTION MADE ON A SILICON CRYSTAL IN A PLASTIC CASE WITH TWO NICKEL TERMINALS. DOES NOT HAVE PHOTO SENSITIVITY. SURFACE MOUNTED.1.35322.23ChinaSTAVROPOL DISTRICT S NEW BINARADKAENERGOMERA JSC
1/20/20228541100009DIODE SMAJ30A-TR. IS A PN JUNCTION MADE ON A SILICON PLATE. THE DIODE IS PACKED IN A PLASTIC CASE, FROM THE ENDS OF WHICH THERE ARE CONCLUSIONS FOR INSTALLATION ON THE BOARD. IS NOT PHOTO-SENSITIVE. APPLIED ON THE SIDE OF THE CATHODE0.98238.7ChinaSTAVROPOL DISTRICT S NEW BINARADKAENERGOMERA JSC

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