1/14/2022 | 8504909800 | TRANSISTOR MODULE MADE ON THE BASIS OF BIPOLAR TRANSISTORS WITH INSULATED GATE, POWER 9.6 KVA. | 1.51 | 514.64 | United States of America | SAN GIULIANO MILANESE ITALY | ALFA TECHNOLOGIES LLC |
1/13/2022 | 8541290000 | BIPOLAR TRANSISTOR, NOT PHOTOTRANSISTOR, FOR VOLTAGE 600 VOLTS, POWER DISPOSION 200 WATT, IGBT BRAND, WITH INSULATED GATE, WITH SILICON SEMICONDUCTOR; USED IN THE ELECTRONIC MODULE OF THE POWERDRIVE ROTARY CONTROL SYSTEM, FOR | 0.12 | 83.36 | United States of America | Unknown | REPRESENTATIVE OFFICE OF THE COMPANY SCHLUMBERGER LOGELCO INC PANAMA MOSCOW |
1/25/2022 | 8541290000 | IGBT TRANSISTOR MODULES -IGBT MODULES IGBT- IGBT HALF-BRIDGE IGBT BIPOLAR TRANSISTOR MODULE WITH INSULATED GATE, USED EXCLUSIVELY FOR INTERNAL INSTALLATION. | 360 | 44468.9 | China | ZHUZHOU CHINA | ELKOMTECH LLC |
1/24/2022 | 8541290000 | INSULATED GATE BIPOLAR TRANSISTOR (IGBT) MODULE | 1.8 | 327.22 | Hungary | HONG KONG | NPO ELECTRONIC SYSTEMS LLC |
1/28/2022 | 8541290000 | IGBT MODULE WITH INSULATED GATE BIPOLAR TRANSISTORS, POWER DISPOSION 1800W, ART.FF300R17KE4, CURRENT 440A, 1700V, RESISTANCE 0.75M?. APPLICATIONS: HIGH POWER CONVERTERS, MOTOR DRIVES, UPS, WIND TURBINES. TOTAL | 161 | 43217.4 | Hungary | TAIPEI AIRPORT TAIWAN | GORIZONT LLC |
1/25/2022 | 8541290000 | BIPOLAR TRANSISTOR (NPN) WITH INSULATED SEMICONDUCTOR GATE. MAXIMUM POWER DISSIPATION 1.35 W. MAXIMUM COLLECTOR-EMMITTER VOLTAGE 45 V. MAXIMUM EMMITTER JUNCTION VOLTAGE 5 V. COLLECTOR CURRENT 1?. TYPE OF SEMICONDUCTOR | 4.2 | 1472.39 | China | COWLUN | ELECTROKOM VPK LLC |
1/2/2022 | 8541290000 | A TRANSISTOR (NOT A PHOTOTRANSISTOR) IS AN ELECTRONIC COMPONENT, A BIPOLAR TRANSISTOR WITH INSULATED GATE. USED IN ELECTRONIC BOARDS IN WELDING MACHINES FOR REPAIR AND MAINTENANCE. NOT MILITARY. FUNCTIONS: | 80.45 | 3101.4 | China | VLADIVISTOK RUSSIA | VERTICAL MECHANISM LLC |
1/26/2022 | 8541290000 | SEMICONDUCTOR DEVICES: BIPOLAR TRANSISTOR WITH INSULATED GATE. VOLTAGE COLLECTOR-EMMITTER 600V, MAXIMUM CONTINUOUS COLLECTOR CURRENT 30A. MAXIMUM POWER DISPOSION 178W. USED IN ELECTRICAL ENGINEERING | 0.01 | 12.74 | China | Hayes | YUE COMPLEX SERVICE SOLUTIONS JSC |
1/21/2022 | 8541290000 | ELECTRONIC COMPONENT OF GENERAL PURPOSE FOR PRODUCTION OF ELECTRONIC EQUIPMENT UNITS: BIPOLAR TRANSISTOR WITH INSULATED GATE (IGBT); TYPE OF SEMICONDUCTOR - SILICON, VOLTAGE COLLECTOR-EMMITTER 900 V, SATURATION VOLTAGE | 0.15 | 307.27 | China | HONG KONG | PLANT PSA ELESI LLC |
1/21/2022 | 8541290000 | MODULES OF BIPOLAR TRANSISTORS WITH INSULATED GATE (IGBT) WITH DISPOSIVE POWER OF 1800 W. TYPE OF SEMICONDUCTOR SILICON. COLLECTOR-EMMITTER VOLTAGE 1700V, GATE-EMMITTER VOLTAGE 20V, CONTINUOUS COLLECTOR DC CURRENT 300A. SUITABLE FOR | 36.57 | 7340.57 | Hungary | YEKATERINBURG KOLTSOVO AIRPORT | URAL IMPORTER LIMITED |