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FInd Latest Russia Import Data of Insulated gate bipolar transistor under HS Code 8541290000

Discover latest Russia import data of Insulated gate bipolar transistor under HS code 8541290000. Search Russia imports data by Country, Product Name, HS Code Price, buyer, supplier name, Port & shipping information. Ultilize these crucial insights for organizing successful marketing strategy. Scale your Business with our authentic Russia Import Data.

DateHS CodeProduct DetailsNet WeightTotal Value (USD)CountryShipment PlaceBuyer
1/21/20228541290000ELECTRONIC COMPONENT OF GENERAL PURPOSE FOR PRODUCTION OF ELECTRONIC EQUIPMENT UNITS: BIPOLAR TRANSISTOR WITH INSULATED GATE (IGBT); TYPE OF SEMICONDUCTOR - SILICON, VOLTAGE COLLECTOR-EMMITTER 900 V, SATURATION VOLTAGE0.15307.27ChinaHONG KONGPLANT PSA ELESI LLC
1/21/20228541290000MODULES OF BIPOLAR TRANSISTORS WITH INSULATED GATE (IGBT) WITH DISPOSIVE POWER OF 1800 W. TYPE OF SEMICONDUCTOR SILICON. COLLECTOR-EMMITTER VOLTAGE 1700V, GATE-EMMITTER VOLTAGE 20V, CONTINUOUS COLLECTOR DC CURRENT 300A. SUITABLE FOR36.577340.57HungaryYEKATERINBURG KOLTSOVO AIRPORTURAL IMPORTER LIMITED
1/25/20228541290000BIPOLAR TRANSISTOR (NPN) WITH INSULATED SEMICONDUCTOR GATE. MAXIMUM POWER DISSIPATION 1.35 W. MAXIMUM COLLECTOR-EMMITTER VOLTAGE 45 V. MAXIMUM EMMITTER JUNCTION VOLTAGE 5 V. COLLECTOR CURRENT 1?. TYPE OF SEMICONDUCTOR4.21472.39ChinaCOWLUNELECTROKOM VPK LLC
1/26/20228541290000SEMICONDUCTOR DEVICES: BIPOLAR TRANSISTOR WITH INSULATED GATE (IGBT). VOLTAGE COLLECTOR-EMMITTER 650V, CONTINUOUS COLLECTOR CURRENT 80A. SCATTERING POWER 283W. SIZE 20.15 X 15.75 X 5.15MM, ELECTRICAL APPLICATION0.0115.31ChinaHayesYUE COMPLEX SERVICE SOLUTIONS JSC
1/20/20228541290000INSULATED GATE BIPOLAR TRANSISTOR MODULES FOR GENERAL INDUSTRIAL APPLICATION FOR FREQUENCY CONVERTERS AND POWER SUPPLY DISTRIBUTION IN UNITS OF RADIO-ELECTRONIC PRODUCTS, NOT SCRAP OF ELECTRICAL EQUIPMENT, NON-MILITARY PURPOSE: BIPOLAR TRANSI1274.44JapanHONG KONGPROISTOK LLC
1/2/20228541290000A TRANSISTOR (NOT A PHOTOTRANSISTOR) IS AN ELECTRONIC COMPONENT, A BIPOLAR TRANSISTOR WITH INSULATED GATE. USED IN ELECTRONIC BOARDS IN WELDING MACHINES FOR REPAIR AND MAINTENANCE. NOT MILITARY. FUNCTIONS:80.453101.4ChinaVLADIVISTOK RUSSIAVERTICAL MECHANISM LLC
1/20/20228541290000INSULATED GATE BIPOLAR TRANSISTOR MODULES FOR GENERAL INDUSTRIAL APPLICATION FOR FREQUENCY CONVERTERS AND POWER SUPPLY DISTRIBUTION IN UNITS OF RADIO-ELECTRONIC PRODUCTS, NOT SCRAP OF ELECTRICAL EQUIPMENT, NON-MILITARY PURPOSE: BIPOLAR TRANSI2.11583.08GermanyHONG KONGPROISTOK LLC
1/25/20228541290000IGBT TRANSISTOR MODULES -IGBT MODULES IGBT- IGBT HALF-BRIDGE IGBT BIPOLAR TRANSISTOR MODULE WITH INSULATED GATE, USED EXCLUSIVELY FOR INTERNAL INSTALLATION.36044468.9ChinaZHUZHOU CHINAELKOMTECH LLC
1/20/20228541290000INSULATED GATE BIPOLAR TRANSISTOR MODULES FOR GENERAL INDUSTRIAL APPLICATION FOR FREQUENCY CONVERTERS AND POWER SUPPLY DISTRIBUTION IN RADIO-ELECTRONIC PRODUCT UNITS, NOT SCRAP OF ELECTRICAL EQUIPMENT, NON-MILITARY PURPOSE: 3-PHASE IGB BRIDGE33.84940.39JapanHONG KONGPROISTOK LLC
1/13/20228541290000BIPOLAR TRANSISTOR, NOT PHOTOTRANSISTOR, FOR VOLTAGE 600 VOLTS, POWER DISPOSION 200 WATT, IGBT BRAND, WITH INSULATED GATE, WITH SILICON SEMICONDUCTOR; USED IN THE ELECTRONIC MODULE OF THE POWERDRIVE ROTARY CONTROL SYSTEM, FOR0.1283.36United States of AmericaUnknownREPRESENTATIVE OFFICE OF THE COMPANY SCHLUMBERGER LOGELCO INC PANAMA MOSCOW

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