1/25/2022 | 8541290000 | IGBT TRANSISTOR MODULES -IGBT MODULES IGBT- IGBT HALF-BRIDGE IGBT BIPOLAR TRANSISTOR MODULE WITH INSULATED GATE, USED EXCLUSIVELY FOR INTERNAL INSTALLATION. | 360 | 44468.9 | China | ZHUZHOU CHINA | ELKOMTECH LLC |
1/25/2022 | 8541290000 | BIPOLAR TRANSISTOR (NPN) WITH INSULATED SEMICONDUCTOR GATE. MAXIMUM POWER DISSIPATION 1.35 W. MAXIMUM COLLECTOR-EMMITTER VOLTAGE 45 V. MAXIMUM EMMITTER JUNCTION VOLTAGE 5 V. COLLECTOR CURRENT 1?. TYPE OF SEMICONDUCTOR | 4.2 | 1472.39 | China | COWLUN | ELECTROKOM VPK LLC |
1/2/2022 | 8541290000 | A TRANSISTOR (NOT A PHOTOTRANSISTOR) IS AN ELECTRONIC COMPONENT, A BIPOLAR TRANSISTOR WITH INSULATED GATE. USED IN ELECTRONIC BOARDS IN WELDING MACHINES FOR REPAIR AND MAINTENANCE. NOT MILITARY. FUNCTIONS: | 80.45 | 3101.4 | China | VLADIVISTOK RUSSIA | VERTICAL MECHANISM LLC |
1/26/2022 | 8541290000 | SEMICONDUCTOR DEVICES: BIPOLAR TRANSISTOR WITH INSULATED GATE. VOLTAGE COLLECTOR-EMMITTER 600V, MAXIMUM CONTINUOUS COLLECTOR CURRENT 30A. MAXIMUM POWER DISPOSION 178W. USED IN ELECTRICAL ENGINEERING | 0.01 | 12.74 | China | Hayes | YUE COMPLEX SERVICE SOLUTIONS JSC |
1/21/2022 | 8541290000 | ELECTRONIC COMPONENT OF GENERAL PURPOSE FOR PRODUCTION OF ELECTRONIC EQUIPMENT UNITS: BIPOLAR TRANSISTOR WITH INSULATED GATE (IGBT); TYPE OF SEMICONDUCTOR - SILICON, VOLTAGE COLLECTOR-EMMITTER 900 V, SATURATION VOLTAGE | 0.15 | 307.27 | China | HONG KONG | PLANT PSA ELESI LLC |
1/26/2022 | 8541290000 | SEMICONDUCTOR DEVICES: BIPOLAR TRANSISTOR WITH INSULATED GATE (IGBT). VOLTAGE COLLECTOR-EMMITTER 650V, CONTINUOUS COLLECTOR CURRENT 80A. SCATTERING POWER 283W. SIZE 20.15 X 15.75 X 5.15MM, ELECTRICAL APPLICATION | 0.01 | 15.31 | China | Hayes | YUE COMPLEX SERVICE SOLUTIONS JSC |