1/28/2022 | 8542326100 | INTEGRAL CIRCUIT OF ELECTRICALLY ERASSABLE REPROGRAMMABLE PERMANENT MEMORY DEVICE (EEPROM) WITH MEMORY CAPACITY NOT MORE THAN 512 Mbit. | 0.01 | 8.6 | China | ST PETERSBURG RUSSIA | GAMMA ENGINEERING LLC |
1/25/2022 | 8542327500 | ELECTRONIC INTEGRATED ELECTRICALLY ERASABLE REPROGRAMMABLE PERMANENT STORAGE DEVICES (ES PROM) EEPROM WITH A MEMORY CAPACITY OF 64 KBIT - DESIGNED FOR USE IN SYSTEMS OF INDUSTRIAL ELECTRONICS OF CIVIL PURPOSE. NOT | 1.49 | 1690.38 | China | HONG KONG | VEST OST LLC |
1/28/2022 | 8542326100 | INTEGRAL CIRCUIT OF ELECTRICALLY ERASSABLE REPROGRAMMABLE PERMANENT MEMORY DEVICE (EEPROM) WITH MEMORY CAPACITY NOT MORE THAN 512 Mbit. | 1.25 | 4410 | China | ST PETERSBURG RUSSIA | PIKMIKRO LLC |
1/28/2022 | 8542326100 | INTEGRAL CIRCUIT OF ELECTRICALLY ERASSABLE REPROGRAMMABLE PERMANENT MEMORY DEVICE (EEPROM) WITH MEMORY CAPACITY NOT MORE THAN 512 Mbit. | 0.01 | 6.3 | China | ST PETERSBURG RUSSIA | GAMMA ENGINEERING LLC |
1/28/2022 | 8542326100 | INTEGRAL CIRCUIT OF ELECTRICALLY ERASSABLE REPROGRAMMABLE PERMANENT MEMORY DEVICE (EEPROM) WITH MEMORY CAPACITY NOT MORE THAN 512 Mbit. | 0.05 | 27 | China | ST PETERSBURG RUSSIA | GAMMA ENGINEERING LLC |
1/20/2022 | 8542327500 | ELECTRONIC INTEGRAL MONOLITHIC MICROCIRCUIT - STORAGE DEVICE TYPE ES PROM (EEPROM) WITH MEMORY 128 KBIT. (OPERATING TEMPERATURE RANGE: -40...+85 C) (NOT HAZARDOUS WASTE) | 0 | 3.48 | Thailand | MANSFIELD CENTER | PM ELECTRONICS LLC |
1/14/2022 | 8542327500 | INTEGRATED MICROCIRCUIT,MONOLITHIC,DIGITAL,MEMORY,EEPROM, WITHOUT ENCRYPTION FUNCTION (CRYPTOGRAPHY),NOT SCRAP OF ELECTRICAL EQUIPMENT,FOR INDUSTRIAL ASSEMBLY OF SAMSUNG EQUIPMENT | 5.69 | 7665.87 | China | SHANGHA CHINA | SAMSUNG ELECTRONICS RUS COMPANY LLC |
1/12/2022 | 8542329000 | INTEGRAL MICROCIRCUIT, DIGITAL, MONOLITHIC, ELECTRICALLY ERASABLE REPROGRAMMABLE PERMANENT MEMORY (EEPROM), FLASH MEMORY WITH SERIAL DATA TRANSMISSION INTERFACE, HIGH-SPEED, IN MINIATURE PLASTIC CASE | 0.06 | 291.42 | China | YUEN LONG HONG KONG | TITAN MICRO LLC |
1/12/2022 | 8542327500 | ELECTRONIC INTEGRAL CIRCUITS - ELECTRICALLY ERASABLE FULLY REPROGRAMMABLE PERMANENT MEMORY DEVICES (ES PROM) EEPROM WITH RAM RAM 512 KBIT (MEMORY CHIP), ASSEMBLED IN A CASE WITH OUTPUTS, FOR PLA MOUNTING | 0.07 | 296.68 | China | HONG KONG | VEST OST LLC |
1/14/2022 | 8542326100 | ELECTRONIC INTEGRAL MONOLITHIC MICROCIRCUIT - MEMORY DEVICE FLASH EEPROM (NOR) WITH MEMORY 4 MBIT. (OPERATING TEMPERATURE RANGE: -40...+85 C) (NOT HAZARDOUS WASTE) | 0.03 | 56.67 | Philippines | MANSFIELD CENTER | PM ELECTRONICS LLC |