1/14/2022 | 8542327500 | ELECTRONIC INTEGRAL MONOLITHIC MICROCIRCUIT - MEMORY DEVICE TYPE EEPROM (EEPROM) WITH A MEMORY SIZE OF 2 KBIT. (OPERATING TEMPERATURE RANGE: -40...+85 C) (NOT HAZARDOUS WASTE) | 0 | 4.08 | Thailand | MANSFIELD CENTER | PM ELECTRONICS LLC |
1/22/2022 | 8542327500 | INTEGRAL MONOLITHIC MICROSCHEMICS, EEPROM MEMORY ES PROM WITH A VOLUME OF 8 Mbit, NOT RADIATION RESISTANT, DO NOT HAVE THE FUNCTION OF ENCRYPTION (CRYPTOGRAPHY), APPLIED FOR SURFACE MOUNTING ON PRINTED BOARDS IN THE MANUFACTURE OF ELECTRONIC EQUIPMENT, | 1.25 | 5737.16 | Taiwan | HONG KONG | PROISTOK LLC |
1/27/2022 | 8542327500 | EEPROM MEMORY CHIP VOLUME 8 KBIT, SERIAL INTERFACE, SUPPLY VOLTAGE 1.7-5.5V | 4.2 | 189.48 | Philippines | MOSCOW RUSSIA | EPS RUS LLC |
1/24/2022 | 8542327500 | CHIP AT24C64D-SSHM-T. IS AN INTEGRATED MONOLITHIC DIGITAL MICROCIRCUIT OF ELECTRICALLY ERASABLE AND PROGRAMMABLE PERMANENT MEMORY (EEPROM). MEMORY 64 Kbps | 0.98 | 492 | China | STAVROPOL DISTRICT S NEW BINARADKA | ENERGOMERA JSC |
1/17/2022 | 8542327500 | ELECTRONIC INTEGRAL MONOLITHIC MICROCIRCUIT - MEMORY DEVICE TYPE EEPROM (EEPROM) WITH A MEMORY SIZE OF 1 KBIT. (OPERATING TEMPERATURE RANGE: -40...+85 C) (NOT HAZARDOUS WASTE) | 0.01 | 10.17 | Philippines | MANSFIELD CENTER | PM ELECTRONICS LLC |
1/24/2022 | 8542327500 | ELECTRONIC INTEGRAL MONOLITHIC MICROCIRCUIT - MEMORY DEVICE TYPE EEPROM (EEPROM) WITH MEMORY 128 KBIT. (OPERATING TEMPERATURE RANGE: -40...+85 C) (NOT HAZARDOUS WASTE) | 0.01 | 18.08 | Philippines | MANSFIELD CENTER | PM ELECTRONICS LLC |
1/22/2022 | 8542327500 | INTEGRAL MONOLITHIC MICROCIRCUIT, EEPROM MEMORY ES PROM WITH A VOLUME OF 2 Mbit, NOT RADIATION RESISTANT, DO NOT HAVE THE FUNCTION OF ENCRYPTION (CRYPTOGRAPHY), APPLIED FOR SURFACE MOUNTING ON PRINTED BOARDS IN THE MANUFACTURE OF ELECTRONIC EQUIPMENT, | 0.2 | 1690.84 | Taiwan | HONG KONG | PROISTOK LLC |
1/17/2022 | 8542327500 | ELECTRONIC INTEGRAL MONOLITHIC MICROCIRCUIT - MEMORY DEVICE TYPE EEPROM (EEPROM) WITH A MEMORY SIZE OF 512 KBIT. (OPERATING TEMPERATURE RANGE: -40...+125 C) (NOT HAZARDOUS WASTE) | 0.07 | 89.88 | China | MANSFIELD CENTER | PM ELECTRONICS LLC |
1/19/2022 | 8542327500 | ELECTRONIC INTEGRATED CIRCUITS - ELECTRICALLY ERASABLE FULLY REPROGRAMMABLE PERMANENT MEMORY DEVICES (ES PROM) EEPROM WITH RAM RAM 128 KBIT (MEMORY CHIP), ASSEMBLED IN A CASE WITH OUTPUTS, FOR PLA MOUNTING | 0.07 | 103.23 | France | HONG KONG | VEST OST LLC |
1/18/2022 | 8542327500 | ELECTRONIC INTEGRAL MONOLITHIC MICROCIRCUIT - MEMORY DEVICE TYPE EEPROM (EEPROM) WITH MEMORY 4 KBIT. (OPERATING TEMPERATURE RANGE: -40...+85 C) (NOT HAZARDOUS WASTE) | 0 | 3.75 | China | MANSFIELD CENTER | PM ELECTRONICS LLC |