1/23/2022 | 8542326100 | ELECTRONIC INTEGRAL SCHEMES, DOES NOT CONTAIN CRYPTOGRAPHY (ENCRYPTION) FUNCTIONS, NOT EQUIPMENT SCRAP, FOR INSTALLATION IN ELECTRONIC BOARDS, EEPROM MEMORY, MEMORY SIZE: 1 Kbit, VOLTAGE: 1.8-5.5 V, WORKING TEMPERATURE: -40-+85 ?; | 0 | 4.43 | China | SAINT PETERBURG RUSSIA | SPHERE OF ELECTRONICS LLC |
1/28/2022 | 8542326100 | INTEGRAL CIRCUIT OF ELECTRICALLY ERASSABLE REPROGRAMMABLE PERMANENT MEMORY DEVICE (EEPROM) WITH MEMORY CAPACITY NOT MORE THAN 512 Mbit. | 0.01 | 8.6 | China | ST PETERSBURG RUSSIA | GAMMA ENGINEERING LLC |
1/28/2022 | 8542326100 | ELECTRONIC INTEGRAL MONOLITHIC MICROCIRCUIT - A MEMORY DEVICE (FPVM-CONFIGURATION MEMORY) OF THE FLASH-EEPROM TYPE WITH A MEMORY SIZE OF 8 MBIT. (OPERATING TEMPERATURE RANGE: -40...+85 C) (NOT HAZARDOUS WASTE) | 0.06 | 67.02 | Philippines | MANSFIELD CENTER | PM ELECTRONICS LLC |
1/17/2022 | 8542326100 | ELECTRONIC INTEGRAL MONOLITHIC MICROCIRCUIT - A FLASH-EEPROM (NOR) MEMORY DEVICE WITH A MEMORY OF 512 MBIT. (OPERATING TEMPERATURE RANGE: -40...+85 C) (NOT HAZARDOUS WASTE) | 0.01 | 49.58 | Malaysia | MANSFIELD CENTER | PHOENIX LLC |
1/21/2022 | 8542326100 | INTEGRAL CIRCUIT OF ELECTRICALLY ERASSABLE REPROGRAMMABLE PERMANENT MEMORY DEVICE (EEPROM) WITH MEMORY CAPACITY NOT MORE THAN 512 Mbit. | 1.42 | 5164.6 | Taiwan | ST PETERSBURG RUSSIA | GAMMA ENGINEERING LLC |
1/21/2022 | 8542326100 | ELECTRONIC INTEGRAL MONOLITHIC MICROCIRCUIT - FLASH EEPROM (NOR) STORAGE DEVICE WITH MEMORY 32 MBIT. (OPERATING TEMPERATURE RANGE: -40...+85 C) (NOT HAZARDOUS WASTE) | 0 | 85.95 | Taiwan | ST PETERSBURG RUSSIA | ALKON ELECTRONICS LLC |
1/26/2022 | 8542326100 | ELECTRONIC INTEGRAL MONOLITHIC MICROCIRCUIT - A FLASH-EEPROM (NOR) MEMORY DEVICE WITH A MEMORY CAPACITY OF 256 MBIT. (OPERATING TEMPERATURE RANGE: -40...+85 C)(NOT HAZARDOUS WASTE) | 0.07 | 365.37 | China | SINGAPORE AIRPORT | SVARNOY LLC |
1/18/2022 | 8542326100 | ELECTRONIC INTEGRAL MONOLITHIC MICROCIRCUIT - FLASH-EEPROM TYPE STORAGE DEVICE WITH MEMORY 128 KBIT. (OPERATING TEMPERATURE RANGE: -40...+85 C) (NOT HAZARDOUS WASTE) | 0.01 | 11.31 | Taiwan | MANSFIELD CENTER | PM ELECTRONICS LLC |
1/14/2022 | 8542326100 | ELECTRONIC INTEGRAL MONOLITHIC MICROCIRCUIT - FLASH EEPROM (NOR) MEMORY DEVICE WITH MEMORY 1 Mbit. (OPERATING TEMPERATURE RANGE: 0...+70 C) (NOT HAZARDOUS WASTE) | 0.18 | 86.33 | Taiwan | ST PETERSBURG RUSSIA | ALKON ELECTRONICS LLC |
1/26/2022 | 8542326100 | ELECTRONIC INTEGRAL MONOLITHIC MICROCIRCUIT - A FLASH-EEPROM TYPE STORAGE DEVICE WITH A MEMORY CAPACITY OF 512 KBIT. (OPERATING TEMPERATURE RANGE: -40...+85 C) (NOT HAZARDOUS WASTE) | 0.08 | 969.76 | China | SINGAPORE AIRPORT | SVARNOY LLC |