1/24/2022 | 8541290000 | TRANSISTOR. THE PRODUCT IS A FIELD TRANSISTOR WITH A MAXIMUM DISPOSIVE POWER OF 150 W AND OPERATING VOLTAGE BETWEEN THE DRAIN-SOURCE UP TO 1200 V. MADE IN A HIP247 CASE. IS NOT A SCRAP OF ELECTRICAL EQUIPMENT. IMPORTED AS | 2 | 2657.22 | China | MOSCOW RUSSIA | PLANAR LLC |
1/21/2022 | 8541290000 | TRANSISTOR. THE PRODUCT IS A FIELD TRANSISTOR WITH MAXIMUM DISPOSIVE POWER UP TO 62.5 W AND OPERATING VOLTAGE BETWEEN DRAIN-SOURCE UP TO 150 V. MADE IN A POWERPAK 1212-8W CASE. IS NOT A SCRAP OF ELECTRICAL EQUIPMENT. IMPORTED INTO | 0.13 | 431.88 | China | MOSCOW RUSSIA | PLANAR LLC |
1/19/2022 | 8541290000 | MOSFET, FOR AUTOMATIC MOUNTING ON THE BOARD, DOES NOT CONTAIN RADIOACTIVE SOURCES, DESIGNED TO WORK AT 16V VOLTAGE | 0.01 | 51.66 | China | MOSCOW RUSSIA | SYNERGIA DISTRIBUTION LLC |
1/19/2022 | 8541290000 | TRANSISTOR. THE PRODUCT IS A FIELD TRANSISTOR WITH A MAXIMUM DISPOSIVE POWER OF 44 W AND A VOLTAGE BETWEEN Drain-SOURCE UP TO 1700 V. MADE IN A TO-268 CASE. IS NOT A SCRAP OF ELECTRICAL EQUIPMENT. IMPORTED AS A COMPONENT FOR | 2.1 | 1379.49 | South Korea | MOSCOW RUSSIA | PLANAR LLC |
1/21/2022 | 8541290000 | TRANSISTOR, SERIES BSC072N04LD . THE PRODUCT IS A FIELD TRANSISTOR WITH A MAXIMUM DISPOSIVE POWER OF 65 W AND A WORKING VOLTAGE BETWEEN THE DRAIN-SOURCE OF UP TO 40 V. MADE IN A TDSON-8-4 CASE. IS NOT A SCRAP OF ELECTRICAL EQUIPMENT. IMPORTED INTO | 0 | 7.44 | Malaysia | MOSCOW RUSSIA | PLANAR LLC |
1/21/2022 | 8541290000 | N-CHANNEL MOSFET TRANSISTORS: TK18A30D,S5X(M WITH DISPOSIVE POWER 45W, DRAIN-SOURCE VOLTAGE 300V, DC DRAIN CURRENT 18A; | 3.84 | 1001.25 | Malaysia | ST PETERSBURG RUSSIA | ALR LLC |
1/28/2022 | 8541290000 | MRW SEMICONDUCTOR DEVICE::N-CHANNEL TRANSISTOR. VOLTAGE DRAIN-SOURCE 30V. CURRENT 179A. POWER DISPOSION 125W. USED IN ELECTRICAL ENGINEERING. IS NOT A SCRAP OF ELECTRICAL EQUIPMENT. ELKLIM | 0.07 | 77.62 | Mexico | Hayes | YUE COMPLEX SERVICE SOLUTIONS JSC |
1/26/2022 | 8541290000 | SEMICONDUCTOR DEVICES: N-CHANNEL MOS TRANSISTOR. MAXIMUM POWER DISSIPATION 96 W. VOLTAGE DRAIN-SOURCE +/-20V. CURRENT 100A. DIMENSIONS 6.1 X 5.35 X 1.1MM. IS NOT A SCRAP OF ELECTRICAL EQUIPMENT. USED IN ELECTRICAL ENGINEERING | 0.01 | 23.54 | Malaysia | Hayes | YUE COMPLEX SERVICE SOLUTIONS JSC |
1/11/2022 | 8541290000 | TRANSISTORS EXCEPT PHOTOTRANSISTORS: PRODUCT CATEGORY: MOSFET CONTINUOUS CURRENT: 24 A RESISTANCE: 77.5 MOHMS GATE-SOURCE VOLTAGE: 20 V DISPOSAL POWER: 144 W. | 0.72 | 326.71 | Thailand | SHENZHEN CHINA | SPARK TT LLC |
1/28/2022 | 8541290000 | SEMICONDUCTOR DEVICES: N-CHANNEL TRANSISTOR. MAXIMUM POWER DISPOSION 110W. VOLTAGE DRAIN-SOURCE 60 V. CURRENT 20A. DIMENSIONS 6.73 X 6.22 X 2.39MM. IS NOT A SCRAP OF ELECTRICAL EQUIPMENT. USED IN ELECTRICAL ENGINEERING | 0.09 | 221.46 | United States of America | Hayes | YUE COMPLEX SERVICE SOLUTIONS JSC |