1/21/2022 | 8541210000 | TRANSISTOR. THE PRODUCT IS A FIELD TRANSISTOR WITH A MAXIMUM DISPOSIVE POWER OF 360 MW AND A WORKING VOLTAGE BETWEEN THE DRAIN-SOURCE UP TO 5 V. IS MADE IN A SOT-343 CASE. IT IS NOT A SCRAP OF ELECTRICAL EQUIPMENT. IMPORTED AS | 0.15 | 528.34 | India | MOSCOW RUSSIA | PLANAR LLC |
1/21/2022 | 8541210000 | THE TRANSISTOR. PRODUCT IS A FIELD TRANSISTOR WITH A MAXIMUM DISPOSIVE POWER OF 360 MW AND A WORKING VOLTAGE BETWEEN DRAIN-SOURCE UP TO 5 V. MADE IN A SOT-343 CASE. IMPORTED AS A COMPONENT | 0.08 | 106.73 | India | MOSCOW RUSSIA | PLANAR LLC |
1/21/2022 | 8541210000 | TRANSISTOR. PRODUCT IS A FIELD TRANSISTOR WITH MAXIMUM POWER DISPOSION OF 500 MW AND OPERATING VOLTAGE BETWEEN DRAIN-SOURCE UP TO 5 V. MADE IN SOT-343 CASE. IMPORTED AS A COMPONENT | 0.08 | 110.97 | India | MOSCOW RUSSIA | PLANAR LLC |
1/26/2022 | 8541210000 | ELECTRONIC COMPONENTS: SILICON BIPOLAR TRANSISTOR WITH A COMMON BASE IS INTENDED FOR THE MANUFACTURE OF POWER SUPPLY AND UNINTERRUPTIBLE POWER SOURCES, AS WELL AS CONSTRUCTION OF MACHINE POWER SUPPLY CIRCUITS, SUPPLY VOLTAGE 30V DC, CURRENT 1, | 0.28 | 262.96 | Thailand | PSKOV | VMK LLC |
1/18/2022 | 8541210000 | TRANSISTORS OTHER THAN PHOTOTRANSISTORS WITH LESS THAN 1 W: PRODUCT CATEGORY: BIPOLAR TRANSISTORS INPUT RESISTANCE: 67 MOHMS VDS - DRAIN-SOURCE BREAKDOWN VOLTAGE: 20 V CONTINUOUS COLLECTOR CURRENT: 3.3A | 0.36 | 544.78 | Thailand | SHENZHEN CHINA | SPARK TT LLC |
1/29/2022 | 8541210000 | SEMICONDUCTOR DEVICE:NPN-CHANNEL TRANSISTOR. USED IN ELECTRICAL ENGINEERING. MAXIMUM DRAIN SOURCE VOLTAGE 8 V, MAXIMUM CONTINUOUS DRAIN CURRENT 3.7 A. SCATTERING POWER 960MW. DIMENSIONS: 3.04 X 1.4 X 1.01MM. | 0.08 | 42.94 | China | Hayes | YUE COMPLEX SERVICE SOLUTIONS JSC |
1/17/2022 | 8541210000 | SEMICONDUCTOR DEVICE: NPN/PNP-CHANNEL TRANSISTOR. POWER DISPERSION 200MW. VOLTAGE DRAIN-SOURCE 160V. CURRENT 200MA. IS NOT A SCRAP OF ELECTRICAL EQUIPMENT. USED IN ELECTRICAL ENGINEERING. | 0.04 | 28.53 | China | Hayes | YUE COMPLEX SERVICE SOLUTIONS JSC |
1/25/2022 | 8541210000 | FIELD TRANSISTOR WITH INDUCED P-CHANNEL WITH MAXIMUM POWER DISCIPTION OF 0.833 W. LIMIT VOLTAGE DRAIN-SOURCE -20 VOLTS. GATE-SOURCE VOLTAGE LIMIT 12 V. MAXIMUM CONTINUOUS DRAIN CURRENT -4.3 A. SEMICONDUCTOR TYPE - SILICON | 4.3 | 4226.53 | China | COWLUN | ELECTROKOM VPK LLC |
1/25/2022 | 8541210000 | FIELD TRANSISTOR WITH AN INDUCED N-CHANNEL WITH MAXIMUM POWER DISPOSION 0.83 W. LIMIT VOLTAGE DRAIN-SOURCE 30 VOLTS. CLIMATE VOLTAGE GATE-SOURCE 20 VOLTS. MAXIMUM CONTINUOUS DRAIN CURRENT 1.9 AMPS. TYPE OF SEMICONDUCTOR - | 1 | 1789.09 | China | COWLUN | ELECTROKOM VPK LLC |
1/27/2022 | 8541210000 | ELECTRONIC COMPONENTS: SILICON BIPOLAR TRANSISTOR WITH A COMMON BASE IS INTENDED FOR THE MANUFACTURE OF POWER SUPPLY AND UNINTERRUPTIBLE POWER SOURCES, AS WELL AS CONSTRUCTION OF MACHINE POWER SUPPLY CIRCUITS, SUPPLY VOLTAGE 160V DC, CURRENT 0 | 0 | 56.45 | China | PSKOV | VMK LLC |