1/26/2022 | 8541210000 | TRANSISTORS OTHER THAN PHOTOTRANSISTORS WITH A DISPOSIVE POWER LESS THAN 1 W. NOT SCRAP OF ELECTRICAL EQUIPMENT. NOT MILITARY PURPOSE. THERE ARE NO RADIOACTIVE SOURCES. IS A COMPONENT | 1.73 | 263 | China | MOSCOW RUSSIA | UPZ PROMSVYAZ JSC |
1/21/2022 | 8541210000 | TRANSISTOR. THE PRODUCT IS A FIELD TRANSISTOR WITH A MAXIMUM DISPOSIVE POWER OF 360 MW AND A WORKING VOLTAGE BETWEEN THE DRAIN-SOURCE UP TO 5 V. IS MADE IN A SOT-343 CASE. IT IS NOT A SCRAP OF ELECTRICAL EQUIPMENT. IMPORTED AS | 0.15 | 528.34 | India | MOSCOW RUSSIA | PLANAR LLC |
1/21/2022 | 8541210000 | THE TRANSISTOR. PRODUCT IS A FIELD TRANSISTOR WITH A MAXIMUM DISPOSIVE POWER OF 360 MW AND A WORKING VOLTAGE BETWEEN DRAIN-SOURCE UP TO 5 V. MADE IN A SOT-343 CASE. IMPORTED AS A COMPONENT | 0.08 | 106.73 | India | MOSCOW RUSSIA | PLANAR LLC |
1/21/2022 | 8541210000 | TRANSISTOR. PRODUCT IS A FIELD TRANSISTOR WITH MAXIMUM POWER DISPOSION OF 500 MW AND OPERATING VOLTAGE BETWEEN DRAIN-SOURCE UP TO 5 V. MADE IN SOT-343 CASE. IMPORTED AS A COMPONENT | 0.08 | 110.97 | India | MOSCOW RUSSIA | PLANAR LLC |
1/21/2022 | 8541210000 | TRANSISTORS OTHER THAN PHOTOTRANSISTORS WITH A DISPOSIVE POWER LESS THAN 1 W. NOT SCRAP OF ELECTRICAL EQUIPMENT. NOT MILITARY PURPOSE. THERE ARE NO RADIOACTIVE SOURCES. IS A COMPONENT | 0.13 | 142.5 | China | HONG KONG | UPZ PROMSVYAZ JSC |
1/17/2022 | 8541210000 | MOP TRANSISTOR FOR PCB MOUNTING, DOES NOT CONTAIN RADIATION SOURCES, DOES NOT HAVE ENCRYPTION FUNCTION, IS NOT A PHOTOTRANSISTOR. POWER DISSIPATION LESS THAN 1 W. IT IS USED IN THE MANUFACTURE OF RADIO-ELECTRONIC DEVICES. | 0.08 | 173.4 | China | MOSCOW RUSSIA | RADIOFID SYSTEMS LLC |
1/26/2022 | 8541210000 | ELECTRONIC COMPONENTS: SILICON BIPOLAR TRANSISTOR WITH A COMMON BASE IS INTENDED FOR THE MANUFACTURE OF POWER SUPPLY AND UNINTERRUPTIBLE POWER SOURCES, AS WELL AS CONSTRUCTION OF MACHINE POWER SUPPLY CIRCUITS, SUPPLY VOLTAGE 30V DC, CURRENT 1, | 0.28 | 262.96 | Thailand | PSKOV | VMK LLC |
1/27/2022 | 8541210000 | ELECTRONIC COMPONENTS: SILICON BIPOLAR TRANSISTOR, WITH A COMMON BASE, IS INTENDED FOR THE MANUFACTURE OF POWER SUPPLY AND UNINTERRUPTIBLE POWER SOURCES, AS WELL AS CONSTRUCTION OF POWER SUPPLY CIRCUITS FOR MACHINES, COMMONLY DESCRIPTION: BIPOLAR TRANSISTOR | 0.07 | 38.94 | Taiwan | PSKOV | PROMELECTROD LLC |
1/29/2022 | 8541210000 | SEMICONDUCTOR DEVICE:NPN-CHANNEL TRANSISTOR. USED IN ELECTRICAL ENGINEERING. MAXIMUM DRAIN SOURCE VOLTAGE 8 V, MAXIMUM CONTINUOUS DRAIN CURRENT 3.7 A. SCATTERING POWER 960MW. DIMENSIONS: 3.04 X 1.4 X 1.01MM. | 0.08 | 42.94 | China | Hayes | YUE COMPLEX SERVICE SOLUTIONS JSC |
1/17/2022 | 8541210000 | SEMICONDUCTOR DEVICE: NPN/PNP-CHANNEL TRANSISTOR. POWER DISPERSION 200MW. VOLTAGE DRAIN-SOURCE 160V. CURRENT 200MA. IS NOT A SCRAP OF ELECTRICAL EQUIPMENT. USED IN ELECTRICAL ENGINEERING. | 0.04 | 28.53 | China | Hayes | YUE COMPLEX SERVICE SOLUTIONS JSC |