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Latest Russia Import Data of Textile under HS Code 8541210000 from China

Get latest Russia Import Data of textile under HS Code 05010000 based on shipping from China. Find detailed Russia imports from China with Unit, Price, Buyer name, Port of Unloading & shipment information. Align your business to Russia Market using an impactful data-driven strategy.

DateHS CodeProduct DetailsNet WeightTotal Value (USD)CountryShipment PlaceBuyer
1/26/20228541210000TRANSISTORS OTHER THAN PHOTOTRANSISTORS WITH A DISPOSIVE POWER LESS THAN 1 W. NOT SCRAP OF ELECTRICAL EQUIPMENT. NOT MILITARY PURPOSE. THERE ARE NO RADIOACTIVE SOURCES. IS A COMPONENT1.73263ChinaMOSCOW  RUSSIAUPZ PROMSVYAZ JSC
1/21/20228541210000TRANSISTORS OTHER THAN PHOTOTRANSISTORS WITH A DISPOSIVE POWER LESS THAN 1 W. NOT SCRAP OF ELECTRICAL EQUIPMENT. NOT MILITARY PURPOSE. THERE ARE NO RADIOACTIVE SOURCES. IS A COMPONENT0.13142.5ChinaHONG KONGUPZ PROMSVYAZ JSC
1/17/20228541210000MOP TRANSISTOR FOR PCB MOUNTING, DOES NOT CONTAIN RADIATION SOURCES, DOES NOT HAVE ENCRYPTION FUNCTION, IS NOT A PHOTOTRANSISTOR. POWER DISSIPATION LESS THAN 1 W. IT IS USED IN THE MANUFACTURE OF RADIO-ELECTRONIC DEVICES.0.08173.4ChinaMOSCOW  RUSSIARADIOFID SYSTEMS LLC
1/29/20228541210000SEMICONDUCTOR DEVICE:NPN-CHANNEL TRANSISTOR. USED IN ELECTRICAL ENGINEERING. MAXIMUM DRAIN SOURCE VOLTAGE 8 V, MAXIMUM CONTINUOUS DRAIN CURRENT 3.7 A. SCATTERING POWER 960MW. DIMENSIONS: 3.04 X 1.4 X 1.01MM.0.0842.94ChinaHayesYUE COMPLEX SERVICE SOLUTIONS JSC
1/17/20228541210000SEMICONDUCTOR DEVICE: NPN/PNP-CHANNEL TRANSISTOR. POWER DISPERSION 200MW. VOLTAGE DRAIN-SOURCE 160V. CURRENT 200MA. IS NOT A SCRAP OF ELECTRICAL EQUIPMENT. USED IN ELECTRICAL ENGINEERING.0.0428.53ChinaHayesYUE COMPLEX SERVICE SOLUTIONS JSC
1/25/20228541210000FIELD TRANSISTOR WITH INDUCED P-CHANNEL WITH MAXIMUM POWER DISCIPTION OF 0.833 W. LIMIT VOLTAGE DRAIN-SOURCE -20 VOLTS. GATE-SOURCE VOLTAGE LIMIT 12 V. MAXIMUM CONTINUOUS DRAIN CURRENT -4.3 A. SEMICONDUCTOR TYPE - SILICON4.34226.53ChinaCOWLUNELECTROKOM VPK LLC
1/25/20228541210000FIELD TRANSISTOR WITH AN INDUCED N-CHANNEL WITH MAXIMUM POWER DISPOSION 0.83 W. LIMIT VOLTAGE DRAIN-SOURCE 30 VOLTS. CLIMATE VOLTAGE GATE-SOURCE 20 VOLTS. MAXIMUM CONTINUOUS DRAIN CURRENT 1.9 AMPS. TYPE OF SEMICONDUCTOR -11789.09ChinaCOWLUNELECTROKOM VPK LLC
1/27/20228541210000ELECTRONIC COMPONENTS: SILICON BIPOLAR TRANSISTOR WITH A COMMON BASE IS INTENDED FOR THE MANUFACTURE OF POWER SUPPLY AND UNINTERRUPTIBLE POWER SOURCES, AS WELL AS CONSTRUCTION OF MACHINE POWER SUPPLY CIRCUITS, SUPPLY VOLTAGE 160V DC, CURRENT 0056.45ChinaPSKOVVMK LLC
1/24/20228541210000TRANSISTORS OTHER THAN PHOTOTRANSISTORS WITH A DISPOSIVE POWER LESS THAN 1 W. NOT SCRAP OF ELECTRICAL EQUIPMENT. NOT MILITARY PURPOSE. THERE ARE NO RADIOACTIVE SOURCES. IS A COMPONENT0.3175.59ChinaHONG KONGUPZ PROMSVYAZ JSC
1/13/20228541210000TRANSISTORS, EXCEPT PHOTOTRANSISTORS WITH A DISSIPATION POWER LESS THAN 1 W, NOT A SCRAP OF ELECTRICAL EQUIPMENT, NON-MILITARY PURPOSE, NO RADIOACTIVE SOURCES, DOES NOT HAVE ENCRYPTION AND CRYPTOGRAPHY FUNCTIONS, IS NOT A HIGH-FREQUENCY DEVICE,0.97135.5ChinaMOSCOW  RUSSIAUPZ PROMSVYAZ JSC

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