1/26/2022 | 8541210000 | TRANSISTORS OTHER THAN PHOTOTRANSISTORS WITH A DISPOSIVE POWER LESS THAN 1 W. NOT SCRAP OF ELECTRICAL EQUIPMENT. NOT MILITARY PURPOSE. THERE ARE NO RADIOACTIVE SOURCES. IS A COMPONENT | 1.73 | 263 | China | MOSCOW RUSSIA | UPZ PROMSVYAZ JSC |
1/21/2022 | 8541210000 | TRANSISTORS OTHER THAN PHOTOTRANSISTORS WITH A DISPOSIVE POWER LESS THAN 1 W. NOT SCRAP OF ELECTRICAL EQUIPMENT. NOT MILITARY PURPOSE. THERE ARE NO RADIOACTIVE SOURCES. IS A COMPONENT | 0.13 | 142.5 | China | HONG KONG | UPZ PROMSVYAZ JSC |
1/17/2022 | 8541210000 | MOP TRANSISTOR FOR PCB MOUNTING, DOES NOT CONTAIN RADIATION SOURCES, DOES NOT HAVE ENCRYPTION FUNCTION, IS NOT A PHOTOTRANSISTOR. POWER DISSIPATION LESS THAN 1 W. IT IS USED IN THE MANUFACTURE OF RADIO-ELECTRONIC DEVICES. | 0.08 | 173.4 | China | MOSCOW RUSSIA | RADIOFID SYSTEMS LLC |
1/29/2022 | 8541210000 | SEMICONDUCTOR DEVICE:NPN-CHANNEL TRANSISTOR. USED IN ELECTRICAL ENGINEERING. MAXIMUM DRAIN SOURCE VOLTAGE 8 V, MAXIMUM CONTINUOUS DRAIN CURRENT 3.7 A. SCATTERING POWER 960MW. DIMENSIONS: 3.04 X 1.4 X 1.01MM. | 0.08 | 42.94 | China | Hayes | YUE COMPLEX SERVICE SOLUTIONS JSC |
1/17/2022 | 8541210000 | SEMICONDUCTOR DEVICE: NPN/PNP-CHANNEL TRANSISTOR. POWER DISPERSION 200MW. VOLTAGE DRAIN-SOURCE 160V. CURRENT 200MA. IS NOT A SCRAP OF ELECTRICAL EQUIPMENT. USED IN ELECTRICAL ENGINEERING. | 0.04 | 28.53 | China | Hayes | YUE COMPLEX SERVICE SOLUTIONS JSC |
1/25/2022 | 8541210000 | FIELD TRANSISTOR WITH INDUCED P-CHANNEL WITH MAXIMUM POWER DISCIPTION OF 0.833 W. LIMIT VOLTAGE DRAIN-SOURCE -20 VOLTS. GATE-SOURCE VOLTAGE LIMIT 12 V. MAXIMUM CONTINUOUS DRAIN CURRENT -4.3 A. SEMICONDUCTOR TYPE - SILICON | 4.3 | 4226.53 | China | COWLUN | ELECTROKOM VPK LLC |
1/25/2022 | 8541210000 | FIELD TRANSISTOR WITH AN INDUCED N-CHANNEL WITH MAXIMUM POWER DISPOSION 0.83 W. LIMIT VOLTAGE DRAIN-SOURCE 30 VOLTS. CLIMATE VOLTAGE GATE-SOURCE 20 VOLTS. MAXIMUM CONTINUOUS DRAIN CURRENT 1.9 AMPS. TYPE OF SEMICONDUCTOR - | 1 | 1789.09 | China | COWLUN | ELECTROKOM VPK LLC |
1/27/2022 | 8541210000 | ELECTRONIC COMPONENTS: SILICON BIPOLAR TRANSISTOR WITH A COMMON BASE IS INTENDED FOR THE MANUFACTURE OF POWER SUPPLY AND UNINTERRUPTIBLE POWER SOURCES, AS WELL AS CONSTRUCTION OF MACHINE POWER SUPPLY CIRCUITS, SUPPLY VOLTAGE 160V DC, CURRENT 0 | 0 | 56.45 | China | PSKOV | VMK LLC |
1/24/2022 | 8541210000 | TRANSISTORS OTHER THAN PHOTOTRANSISTORS WITH A DISPOSIVE POWER LESS THAN 1 W. NOT SCRAP OF ELECTRICAL EQUIPMENT. NOT MILITARY PURPOSE. THERE ARE NO RADIOACTIVE SOURCES. IS A COMPONENT | 0.3 | 175.59 | China | HONG KONG | UPZ PROMSVYAZ JSC |
1/13/2022 | 8541210000 | TRANSISTORS, EXCEPT PHOTOTRANSISTORS WITH A DISSIPATION POWER LESS THAN 1 W, NOT A SCRAP OF ELECTRICAL EQUIPMENT, NON-MILITARY PURPOSE, NO RADIOACTIVE SOURCES, DOES NOT HAVE ENCRYPTION AND CRYPTOGRAPHY FUNCTIONS, IS NOT A HIGH-FREQUENCY DEVICE, | 0.97 | 135.5 | China | MOSCOW RUSSIA | UPZ PROMSVYAZ JSC |