1/19/2022 | 8542326100 | MICROCIRCUITS - MEMORY DEVICES ELECTRICALLY ERASABLE FULLY REPROGRAMMABLE PERMANENT STORAGE DEVICES MRAM BASED ON A MATRIX STRUCTURE, WITH A MEMORY CAPACITY OF 1 Mbit FOR USE IN PERSONAL COMPUTERS. | 1.11 | 9743.1 | China | MOSCOW RUSSIA | SIBELKOM LOGISTIC LLC |
1/27/2022 | 8542326100 | ELECTRONIC INTEGRAL MONOLITHIC MICROCIRCUIT - STORAGE DEVICE FLASH EEPROM WITH MEMORY 16 MBIT. (OPERATING TEMPERATURE RANGE: -40...+85 C) (NOT HAZARDOUS WASTE) | 0.43 | 869.68 | Philippines | ST PETERSBURG RUSSIA | VOSTOK JSC |
1/24/2022 | 8542326100 | ELECTRICALLY ERASSABLE PERMANENT ROM INTEGRAL MICROCIRCUIT VOLTAGE 3.6 V OPERATING TEMPERATURE FROM - 40 TO + 85 2 MB | 0.01 | 11.9 | Taiwan | ST PETERSBURG RUSSIA | ALTRABETA LLC |
1/27/2022 | 8542326100 | ELECTRICALLY ERASEABLE PERMANENT ROM INTEGRAL MICROCIRCUIT VOLTAGE 3.6 V OPERATING TEMPERATURE FROM -40 TO +85 32 MB | 0.04 | 1166.89 | Taiwan | ST PETERSBURG RUSSIA | ALTRABETA LLC |
1/21/2022 | 8542326100 | ELECTRONIC INTEGRAL MONOLITHIC MICROCIRCUIT - FLASH EEPROM (NOR) STORAGE DEVICE WITH MEMORY 32 MBIT. (OPERATING TEMPERATURE RANGE: -40...+85 C) (NOT HAZARDOUS WASTE) | 0 | 85.95 | Taiwan | ST PETERSBURG RUSSIA | ALKON ELECTRONICS LLC |
1/12/2022 | 8542326100 | INTEGRATED MONOLITHIC MICROCIRCUIT, FLASH MEMORY OF 4 Mbit, CONTAINING ACTIVE ELEMENTS, FOR INFORMATION STORAGE IN COMPUTING EQUIPMENT, ART. AT45DB041E-SSHN-B - 98PCS. | 0.1 | 97.25 | Philippines | HONG KONG | YAKOVLEV ELECTRONICS LLC |
1/12/2022 | 8542326100 | INTEGRATED MONOLITHIC MICROCIRCUIT, FLASH MEMORY OF 128 Kbps, CONTAINING ACTIVE ELEMENTS, FOR STORING INFORMATION IN COMPUTING EQUIPMENT, ART. STM32F205RBT6 - 160PCS | 0.3 | 2832.46 | Philippines | HONG KONG | YAKOVLEV ELECTRONICS LLC |
1/12/2022 | 8542326100 | INTEGRATED MONOLITHIC MICROCIRCUIT, FLASH MEMORY OF 1 Mbit, CONTAINING ACTIVE ELEMENTS, FOR INFORMATION STORAGE IN COMPUTING EQUIPMENT, ART. STM32F415RGT6 - 160PCS | 0.4 | 1992.34 | Philippines | HONG KONG | YAKOVLEV ELECTRONICS LLC |
1/6/2022 | 8542326100 | ELECTRONIC INTEGRAL MONOLITHIC MICROCIRCUIT - CONFIGURATION MEMORY (MEMORY FLASH-EEPROM) WITH A MEMORY CAPACITY OF 1.6 MBIT. (OPERATING TEMPERATURE RANGE: 0...+70 C) (NOT HAZARDOUS WASTE) | 0.04 | 78.79 | Philippines | SINGAPORE AIRPORT | SVARNOY LLC |
1/11/2022 | 8542326100 | MICROCIRCUITS - MEMORY DEVICES ELECTRICALLY ERASABLE FULLY REPROGRAMMABLE PERMANENT STORAGE DEVICES FLASH-ES PROM BASED ON A MATRIX STRUCTURE, WITH A MEMORY CAPACITY OF 4 MBIT FOR USE IN PERSONAL COMPUTERS. NON-MILITARY | 0.83 | 940.7 | Philippines | NOVOSIBIRSK AIRPORT TOLMACHEVO | SIBELKOM LOGISTIC LLC |