1/19/2022 | 8542326100 | MICROCIRCUITS - MEMORY DEVICES ELECTRICALLY ERASABLE FULLY REPROGRAMMABLE PERMANENT STORAGE DEVICES MRAM BASED ON A MATRIX STRUCTURE, WITH A MEMORY CAPACITY OF 1 Mbit FOR USE IN PERSONAL COMPUTERS. | 1.11 | 9743.1 | China | MOSCOW RUSSIA | SIBELKOM LOGISTIC LLC |
1/22/2022 | 8542326100 | ELECTRICALLY ERASABLE PERMANENT ROM INTEGRAL MICROCIRCUIT VOLTAGE 3.6 V OPERATING TEMPERATURE FROM - 40 TO + 85 128 MB | 0.33 | 823.66 | China | MONTREAL CANADA | ALTRABETA LLC |
1/6/2022 | 8542326100 | ELECTRONIC INTEGRAL MONOLITHIC MICROCIRCUIT - A FLASH-EEPROM STORAGE DEVICE WITH A MEMORY CAPACITY OF 128 MBIT. (OPERATING TEMPERATURE RANGE: -40...+85 C) (NOT HAZARDOUS WASTE) | 0.11 | 272.01 | China | SINGAPORE AIRPORT | SVARNOY LLC |
1/11/2022 | 8542326100 | MONOLITHIC INTEGRATED MICROCIRCUIT, THAT IS A DYNAMIC RANDOM RAM MEMORY (DRAM) WITH A MEMORY CAPACITY OF 16 Mbit FOR SURFACE MOUNTING ON A PRINTED BOARD, INTENDED FOR USE IN TELECOMMUNICATION EQUIPMENT | 3.2 | 8199.91 | China | NEU ISENBURG FRANKFURT GERMANY | PROISTOK LLC |
1/26/2022 | 8542326100 | ELECTRONIC INTEGRAL MONOLITHIC MICROCIRCUIT - A FLASH-EEPROM (NOR) MEMORY DEVICE WITH A MEMORY CAPACITY OF 256 MBIT. (OPERATING TEMPERATURE RANGE: -40...+85 C)(NOT HAZARDOUS WASTE) | 0.07 | 365.37 | China | SINGAPORE AIRPORT | SVARNOY LLC |
1/26/2022 | 8542326100 | ELECTRICALLY ERASEABLE PERMANENT MEMORY IN THE FORM OF INTEGRAL MICROCIRCUIT VOLTAGE 5.5 V OPERATING TEMPERATURE FROM - 40 TO + 85 1 MB | 0 | 9.64 | China | MONTREAL CANADA | ALTRABETA LLC |
1/26/2022 | 8542326100 | ELECTRICALLY ERASEABLE PERMANENT MEMORY IN THE FORM OF INTEGRAL MICROCIRCUIT VOLTAGE 3.6 V OPERATING TEMPERATURE FROM - 40 TO + 85 1 MB | 0.02 | 169.85 | China | HONGKONG AIRPORT | ALTRABETA LLC |
1/26/2022 | 8542326100 | ELECTRICALLY ERASEABLE PERMANENT ROM INTEGRAL MICROCIRCUIT VOLTAGE 5.5 V OPERATING TEMPERATURE FROM - 40 TO + 85 512 MB | 1.41 | 2197.42 | China | HONGKONG AIRPORT | ALTRABETA LLC |
1/26/2022 | 8542326100 | ELECTRONIC INTEGRAL MONOLITHIC MICROCIRCUIT - A MEMORY DEVICE (CONFIGURATION MEMORY) OF THE FLASH-EEPROM TYPE WITH A VOLUME OF 4 MBIT. (OPERATING TEMPERATURE RANGE: -40...+85 C) (NOT HAZARDOUS WASTE) | 0.04 | 42.05 | China | SINGAPORE AIRPORT | SVARNOY LLC |
1/26/2022 | 8542326100 | ELECTRONIC INTEGRAL MONOLITHIC MICROCIRCUIT - A FLASH-EEPROM TYPE STORAGE DEVICE WITH A MEMORY CAPACITY OF 512 KBIT. (OPERATING TEMPERATURE RANGE: -40...+85 C) (NOT HAZARDOUS WASTE) | 0.08 | 969.76 | China | SINGAPORE AIRPORT | SVARNOY LLC |