1/26/2022 | 8542324500 | INTEGRATED MONOLITHIC ANALOGIC RAM MICROCIRCUIT, RAM, ACCORDING TO ITS DEVICE SRAM - STATIC RAM WITH RANDOM ACCESS, USED IN ELECTRONICS IN MODULES FOR CALCULATION OF SET PARAMETERS, NOT APPLIED IN | 0.09 | 46.1 | China | MOSCOW RUSSIA | MATRIX ELECTRONICS LLC |
1/26/2022 | 8542324500 | INTEGRATED MONOLITHIC ANALOGIC RAM MICROCIRCUIT, RAM, ACCORDING TO ITS DEVICE SRAM - STATIC RAM WITH RANDOM ACCESS, USED IN ELECTRONICS IN MODULES FOR CALCULATION OF SET PARAMETERS, NOT APPLIED IN | 0.09 | 49.4 | China | MOSCOW RUSSIA | MATRIX ELECTRONICS LLC |
1/26/2022 | 8542324500 | INTEGRATED MONOLITHIC ANALOGIC RAM MICROCIRCUIT, RAM, ACCORDING TO ITS DEVICE SRAM - STATIC RAM WITH RANDOM ACCESS, USED IN ELECTRONICS IN MODULES FOR CALCULATION OF SET PARAMETERS, NOT APPLIED IN | 0.09 | 47.2 | China | MOSCOW RUSSIA | MATRIX ELECTRONICS LLC |
1/26/2022 | 8542324500 | INTEGRATED MONOLITHIC ANALOGIC RAM MICROCIRCUIT, RAM, ACCORDING TO ITS DEVICE SRAM - STATIC RAM WITH RANDOM ACCESS, USED IN ELECTRONICS IN MODULES FOR CALCULATION OF SET PARAMETERS, NOT APPLIED IN | 0.09 | 55 | China | MOSCOW RUSSIA | MATRIX ELECTRONICS LLC |
1/26/2022 | 8542324500 | INTEGRATED MONOLITHIC ANALOGIC RAM MICROCIRCUIT, RAM, ACCORDING TO ITS DEVICE SRAM - STATIC RAM WITH RANDOM ACCESS, USED IN ELECTRONICS IN MODULES FOR CALCULATION OF SET PARAMETERS, NOT APPLIED IN | 0.09 | 44.15 | China | MOSCOW RUSSIA | MATRIX ELECTRONICS LLC |
1/26/2022 | 8542324500 | INTEGRATED MONOLITHIC ANALOGIC RAM MICROCIRCUIT, RAM, ACCORDING TO ITS DEVICE SRAM - STATIC RAM WITH RANDOM ACCESS, USED IN ELECTRONICS IN MODULES FOR CALCULATION OF SET PARAMETERS, NOT APPLIED IN | 0.09 | 45.08 | China | MOSCOW RUSSIA | MATRIX ELECTRONICS LLC |
1/26/2022 | 8542324500 | ELECTRONIC INTEGRAL MONOLITHIC MICROCIRCUIT - STATIC RANDOM MEMORY DEVICES (SOZU) WITH 8 MB MEMORY. (OPERATING TEMPERATURE RANGE: -40...+85 C) (NOT HAZARDOUS WASTE) | 0.39 | 431.7 | Philippines | SINGAPORE AIRPORT | SVARNOY LLC |
1/24/2022 | 8542324500 | ELECTRONIC INTEGRAL MONOLITHIC MICROCIRCUIT, DO NOT CREATE ELECTROMAGNETIC INTERFERENCE: | 0.03 | 95.64 | Taiwan | VANTAA AIRPORT | KVAZAR LLC |
1/25/2022 | 8542324500 | ELECTRONIC INTEGRAL MONOLITHIC MICROCIRCUIT, DO NOT CREATE ELECTROMAGNETIC INTERFERENCE: | 0.59 | 308.66 | Taiwan | NARVA | ELECTRONICS IMPORT EXPORT LLC |
1/21/2022 | 8542324500 | ELECTRONIC INTEGRAL MONOLITHIC MICROCIRCUIT - STATIC RANDOM MEMORY (SOZU) WITH MEMORY 4 MB (OPERATING TEMPERATURE RANGE: -40...+85 C) (NOT HAZARDOUS WASTE) | 0.03 | 49.5 | Taiwan | MANSFIELD CENTER | PM ELECTRONICS LLC |