1/26/2022 | 8542324500 | INTEGRATED MONOLITHIC ANALOGIC RAM MICROCIRCUIT, RAM, ACCORDING TO ITS DEVICE SRAM - STATIC RAM WITH RANDOM ACCESS, USED IN ELECTRONICS IN MODULES FOR CALCULATION OF SET PARAMETERS, NOT APPLIED IN | 0.09 | 46.1 | China | MOSCOW RUSSIA | MATRIX ELECTRONICS LLC |
1/26/2022 | 8542324500 | INTEGRATED MONOLITHIC ANALOGIC RAM MICROCIRCUIT, RAM, ACCORDING TO ITS DEVICE SRAM - STATIC RAM WITH RANDOM ACCESS, USED IN ELECTRONICS IN MODULES FOR CALCULATION OF SET PARAMETERS, NOT APPLIED IN | 0.09 | 49.4 | China | MOSCOW RUSSIA | MATRIX ELECTRONICS LLC |
1/26/2022 | 8542324500 | INTEGRATED MONOLITHIC ANALOGIC RAM MICROCIRCUIT, RAM, ACCORDING TO ITS DEVICE SRAM - STATIC RAM WITH RANDOM ACCESS, USED IN ELECTRONICS IN MODULES FOR CALCULATION OF SET PARAMETERS, NOT APPLIED IN | 0.09 | 47.2 | China | MOSCOW RUSSIA | MATRIX ELECTRONICS LLC |
1/26/2022 | 8542324500 | INTEGRATED MONOLITHIC ANALOGIC RAM MICROCIRCUIT, RAM, ACCORDING TO ITS DEVICE SRAM - STATIC RAM WITH RANDOM ACCESS, USED IN ELECTRONICS IN MODULES FOR CALCULATION OF SET PARAMETERS, NOT APPLIED IN | 0.09 | 55 | China | MOSCOW RUSSIA | MATRIX ELECTRONICS LLC |
1/26/2022 | 8542324500 | INTEGRATED MONOLITHIC ANALOGIC RAM MICROCIRCUIT, RAM, ACCORDING TO ITS DEVICE SRAM - STATIC RAM WITH RANDOM ACCESS, USED IN ELECTRONICS IN MODULES FOR CALCULATION OF SET PARAMETERS, NOT APPLIED IN | 0.09 | 44.15 | China | MOSCOW RUSSIA | MATRIX ELECTRONICS LLC |
1/26/2022 | 8542324500 | INTEGRATED MONOLITHIC ANALOGIC RAM MICROCIRCUIT, RAM, ACCORDING TO ITS DEVICE SRAM - STATIC RAM WITH RANDOM ACCESS, USED IN ELECTRONICS IN MODULES FOR CALCULATION OF SET PARAMETERS, NOT APPLIED IN | 0.09 | 45.08 | China | MOSCOW RUSSIA | MATRIX ELECTRONICS LLC |
1/24/2022 | 8542324500 | ELECTRONIC INTEGRAL MONOLITHIC MICROCIRCUIT, DO NOT CREATE ELECTROMAGNETIC INTERFERENCE: | 0.02 | 489.14 | China | VANTAA AIRPORT | KVAZAR LLC |
1/24/2022 | 8542324500 | ELECTRONIC INTEGRAL MONOLITHIC MICROCIRCUIT, DO NOT CREATE ELECTROMAGNETIC INTERFERENCE: | 0.35 | 669.6 | China | ST PETERSBURG RUSSIA | SPETSVOLTAZH LLC |
1/19/2022 | 8542324500 | ELECTRONIC INTEGRAL MONOLITHIC MICROCIRCUIT - STATIC RANDOM MEMORY (SOZU) WITH MEMORY 16 MB (OPERATING TEMPERATURE RANGE: -40...+85 C) (NOT HAZARDOUS WASTE) | 3.31 | 8615.6 | China | ST PETERSBURG RUSSIA | VOSTOK JSC |
1/12/2022 | 8542324500 | ELECTRONIC INTEGRAL MONOLITHIC MICROCIRCUIT - STATIC RANDOM MEMORY (SOZU) WITH MEMORY 16 MB (OPERATING TEMPERATURE RANGE: -40...+85 C) (NOT HAZARDOUS WASTE) | 30.54 | 76344.9 | China | ST PETERSBURG RUSSIA | VOSTOK JSC |