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FInd Latest Russia Import Data of Microcircuit under HS Code 8542323900

Discover latest Russia import data of Microcircuit under HS code 8542323900. Search Russia imports data by Country, Product Name, HS Code Price, buyer, supplier name, Port & shipping information. Ultilize these crucial insights for organizing successful marketing strategy. Scale your Business with our authentic Russia Import Data.

DateHS CodeProduct DetailsNet WeightTotal Value (USD)CountryShipment PlaceBuyer
1/19/20228542323900MONOLITHIC INTEGRATED MICROCIRCUIT - DYNAMIC RANDOM MEMORY DEVICES (DOSES) WITH A MEMORY OF MORE THAN 512 MB, WITHOUT FUNCTION OF ENCRYPTION (CRYPTOGRAPHY), NOT CONTAINING. CIPHROV. (CRYPTOGRAPH.) FUNDS, NOT SCRAP OF ELECTRICAL EQUIPMENT,0.334259.1South KoreaMOSCOW  RUSSIASAMSUNG ELECTRONICS RUS COMPANY LLC
1/24/20228542323900ELECTRONIC INTEGRAL MONOLITHIC MICROCIRCUIT, DO NOT CREATE ELECTROMAGNETIC INTERFERENCE:0.061834.45TaiwanST PETERSBURG  RUSSIASPETSVOLTAZH LLC
1/30/20228542323900ELECTRONIC INTEGRAL MONOLITHIC MICROCIRCUIT, DO NOT CREATE ELECTROMAGNETIC INTERFERENCE:0.09204.71MalaysiaVANTAA AIRPORTKVAZAR LLC
1/30/20228542323900ELECTRONIC INTEGRAL MONOLITHIC MICROCIRCUIT, DO NOT CREATE ELECTROMAGNETIC INTERFERENCE:0.0341.59ThailandVANTAA AIRPORTKVAZAR LLC
1/11/20228542323900MONOLITHIC INTEGRATED MICROCIRCUIT K4T1G164QJ-BIE7000 - DOSE DDR2 SDRAM. DESIGNED FOR ELECTRICITY CONSUMPTION CONTROL EQUIPMENT. TECHNICAL DATA: MEMORY 1 GB, SUPPLY VOLTAGE 1.7 - 1.9 V, OPERATING TEMPERATURE RANGE FROM 0 TO1.382808.29South KoreaKIRCHHEIM BEI MUNCHEN GERMANYSCANTI LLC
1/18/20228542323900ELECTRONIC INTEGRAL MONOLITHIC MICROCIRCUIT - DYNAMIC RANDOM MEMORY (DOSE) DRAM WITH MEMORY 16 GBIT. (OPERATING TEMPERATURE RANGE: -40...+95 ?) (NOT HAZARDOUS WASTE)0.03187.4TaiwanMANSFIELD CENTERPM ELECTRONICS LLC
1/30/20228542323900ELECTRONIC INTEGRAL MONOLITHIC MICROCIRCUIT, DO NOT CREATE ELECTROMAGNETIC INTERFERENCE:0.04127.81United States of AmericaVANTAA AIRPORTKVAZAR LLC
1/11/20228542323900INTEGRATED MONOLITHIC ANALOGUE MICROCIRCUIT OF ELECTRICALLY ERASABLE REPROGRAMMABLE MEMORY USED IN MODULES FOR CALCULATION OF SET PARAMETERS OF CIVIL APPLIANCES. NOT FOR MILITARY PURPOSES. NOT APPLICABLE IN FIRE EQUIPMENT31397.38ChinaSAR HONG KONGMICROSAN LLC
1/12/20228542323900MONOLITHIC INTEGRATED MICROCIRCUIT: DDR3L DYNAMIC MEMORY CHIP, FOR MOUNTING ON PRINTED BOARDS, WITHOUT CONTENT OF ENCRYPTION (CRYPTOGRAPHIC) MEANS, NON-MILITARY PURPOSE, NOT SCRAP OF ELECTRICAL EQUIPMENT, NOT RADIO-RESISTANT7.59102341.4South KoreaST PETERSBURG  RUSSIAMT SYSTEMS LLC
1/31/20228542323900MONOLITHIC INTEGRATED MICROCIRCUIT: DDR3L DYNAMIC MEMORY CHIP, FOR MOUNTING ON PRINTED BOARDS, WITHOUT CONTENT OF ENCRYPTION (CRYPTOGRAPHIC) MEANS, NON-MILITARY PURPOSE, NOT SCRAP OF ELECTRICAL EQUIPMENT, NOT RADIO-RESISTANT0.426543.1South KoreaST PETERSBURG  RUSSIAMT SYSTEMS LLC

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