1/25/2022 | 8542323900 | INTEGRATED MONOLITHIC MICROCIRCUIT, DYNAMIC RANDOM MEMORY DEVICES WITH 2000 Mbit MEMORY FOR INSTALLATION IN ELECTRONIC BOARDS. NOT WASTE, NOT SCRAP OF ELECTRICAL EQUIPMENT, DOES NOT CONTAIN PRECIOUS METALS, NOT FOR HOUSEHOLD USE | 0.2 | 681.82 | Taiwan | SHENZHEN CHINA | ELECATE LLC |
1/20/2022 | 8542323900 | ELECTRONIC INTEGRAL MONOLITHIC MICROCIRCUIT - DYNAMIC RANDOM MEMORY (DOSE) DRAM WITH MEMORY 4 GBIT. (OPERATING TEMPERATURE RANGE: 0...+95 ?) (NOT HAZARDOUS WASTE) | 0.03 | 86.23 | Taiwan | MANSFIELD CENTER | PM ELECTRONICS LLC |
1/17/2022 | 8542323900 | ELECTRONIC INTEGRAL MONOLITHIC MICROCIRCUIT - DYNAMIC RANDOM MEMORY (DOSE) DRAM WITH MEMORY 2 GBIT. (OPERATING TEMPERATURE RANGE: 0...+95 ?) (NOT HAZARDOUS WASTE) | 0.01 | 19.9 | Taiwan | MANSFIELD CENTER | PM ELECTRONICS LLC |
1/18/2022 | 8542323900 | ELECTRONIC INTEGRAL MONOLITHIC MICROCIRCUIT - DYNAMIC RANDOM MEMORY (DOSE) DRAM WITH MEMORY 4 GBIT. (OPERATING TEMPERATURE RANGE: -40...+95 ?) (NOT HAZARDOUS WASTE) | 0.1 | 276.16 | Taiwan | MANSFIELD CENTER | PM ELECTRONICS LLC |
1/18/2022 | 8542323900 | MONOLITHIC INTEGRATED MICROCIRCUITS, NOT FOR MILITARY PURPOSE, NOT ELECTRICAL EQUIPMENT SCRAP: MEMORY CIRCUITS DDR3L DOSE, FOR MOUNTING ON PRINTED BOARDS, WITHOUT THE CONTENT OF ENCRYPTION (CRYPTOGRAPHIC) MEANS. NOT RADIATION RESISTANT. | 1.42 | 7803.59 | Taiwan | TAICHUNG PORT OF TAIWAN CHINA | MT SYSTEMS LLC |
1/18/2022 | 8542323900 | ELECTRONIC INTEGRAL MONOLITHIC MICROCIRCUIT - DYNAMIC RANDOM MEMORY (DOSE) DRAM WITH MEMORY 16 GBIT. (OPERATING TEMPERATURE RANGE: -40...+95 ?) (NOT HAZARDOUS WASTE) | 0.03 | 187.4 | Taiwan | MANSFIELD CENTER | PM ELECTRONICS LLC |
1/24/2022 | 8542323900 | ELECTRONIC INTEGRAL MONOLITHIC MICROCIRCUIT, DO NOT CREATE ELECTROMAGNETIC INTERFERENCE: | 0.06 | 1834.45 | Taiwan | ST PETERSBURG RUSSIA | SPETSVOLTAZH LLC |