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Latest Russia Import Data of Textile under HS Code 8541210000 from China

Get latest Russia Import Data of textile under HS Code 05010000 based on shipping from China. Find detailed Russia imports from China with Unit, Price, Buyer name, Port of Unloading & shipment information. Align your business to Russia Market using an impactful data-driven strategy.

DateHS CodeProduct DetailsNet WeightTotal Value (USD)CountryShipment PlaceBuyer
1/31/20228541210000BIPOLAR TRANSISTOR BC847CW SEMICONDUCTOR ELEMENT, NPN STRUCTURE, IN SC-70 CASE. MAXIMUM COLLECTOR-EMMITTER VOLTAGE: 45V MAXIMUM COLLECTOR DC CURRENT: 100mA OPERATING FREQUENCY: UP TO 100MHz OPERATING TEMPERATURE: -65:+150C 300000 PCS2.731898.18ChinaSHENZHEN  CHINAIE SiNitsyH Ilya AleksaHdrovich
1/31/20228541210000MOSFET SI2301BDS-T1-E3 SEMICONDUCTOR ELEMENT, NPN STRUCTURE, IN SOT-23-3 CASE. MAXIMUM COLLECTOR-EMMITTER VOLTAGE: 20V MAXIMUM CURRENT: 2.4A OPERATING TEMPERATURE: -55:+150C 2000 PCS0.09203.5ChinaSHENZHEN  CHINAIE SiNitsyH Ilya AleksaHdrovich
1/31/20228541210000FIELD TRANSISTOR 2N7002 N-ch. SEMICONDUCTOR ELEMENT IN SURFACE MOUNTING CASE: SOT-23, USED AS A LOW-POWER KEY TRANSISTOR IN AUTOMOTIVE, INDUSTRIAL AND HOUSEHOLD APPLIANCES. STRUCTURE: N-CHANNEL MAXIMUM VOLTAGE Drain-I0.68135.76ChinaSHENZHEN  CHINAIE SiNitsyH Ilya AleksaHdrovich
1/29/20228541210000SEMICONDUCTOR DEVICE:NPN-CHANNEL TRANSISTOR. USED IN ELECTRICAL ENGINEERING. MAXIMUM DRAIN SOURCE VOLTAGE 8 V, MAXIMUM CONTINUOUS DRAIN CURRENT 3.7 A. SCATTERING POWER 960MW. DIMENSIONS: 3.04 X 1.4 X 1.01MM.0.0842.94ChinaHayesYUE COMPLEX SERVICE SOLUTIONS JSC
1/29/20228541210000SEMICONDUCTOR DEVICES: N-CHANNEL TRANSISTOR. MAXIMUM POWER DISPOSION 200 MW. VOLTAGE COLLECTOR-EMTTER 50 V. CURRENT 200 MA. DIMENSIONS 2.2 X 1.35 X 1MM. IS NOT A SCRAP OF ELECTRICAL EQUIPMENT. USED IN ELECTRICAL ENGINEERING0.0872ChinaHayesYUE COMPLEX SERVICE SOLUTIONS JSC
1/25/20228541210000FIELD TRANSISTOR WITH INDUCED P-CHANNEL WITH MAXIMUM POWER DISCIPTION OF 0.833 W. LIMIT VOLTAGE DRAIN-SOURCE -20 VOLTS. GATE-SOURCE VOLTAGE LIMIT 12 V. MAXIMUM CONTINUOUS DRAIN CURRENT -4.3 A. SEMICONDUCTOR TYPE - SILICON4.34226.53ChinaCOWLUNELECTROKOM VPK LLC
1/25/20228541210000FIELD TRANSISTOR WITH AN INDUCED N-CHANNEL WITH MAXIMUM POWER DISPOSION 0.83 W. LIMIT VOLTAGE DRAIN-SOURCE 30 VOLTS. CLIMATE VOLTAGE GATE-SOURCE 20 VOLTS. MAXIMUM CONTINUOUS DRAIN CURRENT 1.9 AMPS. TYPE OF SEMICONDUCTOR -11789.09ChinaCOWLUNELECTROKOM VPK LLC
1/31/20228541210000BIPOLAR TRANSISTOR BCR135W SEMICONDUCTOR ELEMENT, NPN STRUCTURE, IN SOT-323 CASE. MAXIMUM COLLECTOR-EMMITTER VOLTAGE: 50V MAXIMUM COLLECTOR DC CURRENT: 100MA OPERATING FREQUENCY: UP TO 100MHz OPERATING TEMPERATURE: -65:+150C 700 PCS0.08102.39ChinaSHENZHEN  CHINAIE SiNitsyH Ilya AleksaHdrovich
1/31/20228541210000TRANSISTOR PMV20ENR SEMICONDUCTOR ELEMENT, NPN STRUCTURE, IN SOT-23-3 CASE. MAXIMUM COLLECTOR-EMMITTER VOLTAGE: 30V MAXIMUM COLLECTOR DC CURRENT: 5.2A OPERATING FREQUENCY: UP TO 100MHz OPERATING TEMPERATURE: -65:+150C 60 PCS017.88ChinaSHENZHEN  CHINAIE SiNitsyH Ilya AleksaHdrovich
1/31/20228541210000BIPOLAR TRANSISTOR BCR135W SEMICONDUCTOR ELEMENT, NPN STRUCTURE, IN SOT-323 CASE. MAXIMUM COLLECTOR-EMMITTER VOLTAGE: 50V MAXIMUM COLLECTOR DC CURRENT: 100MA OPERATING FREQUENCY: UP TO 100MHz OPERATING TEMPERATURE: -65:+150C 200 PCS0.0230.9ChinaSHENZHEN  CHINAIE SiNitsyH Ilya AleksaHdrovich

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