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Latest Russia Import Data of Textile under HS Code 8541 from China

Get latest Russia Import Data of textile under HS Code 05010000 based on shipping from China. Find detailed Russia imports from China with Unit, Price, Buyer name, Port of Unloading & shipment information. Align your business to Russia Market using an impactful data-driven strategy.

DateHS CodeProduct DetailsNet WeightTotal Value (USD)CountryShipment PlaceBuyer
1/21/20228541100009SEMICONDUCTOR DIODES ARE TWO-ELECTRODE DEVICES WITH ONE PN JUNCTION. ARE NOT LIGHT EMITTING. THEY ARE USED IN THE PRODUCTION OF RADIO EQUIPMENT FOR GENERAL INDUSTRIAL PURPOSE ARE NOT DIODE GROUNDING. MAXIMUM31253.7ChinaMOSCOW  RUSSIAPROMELKOM LLC
1/29/20228541100009SEMICONDUCTOR DEVICES: SCHOTTKY DIODE. MAXIMUM REVERSE REPEATED VOLTAGE 650V, CONSTANT FORWARD CURRENT 30A. DIMENSIONS: 10.41 X 15.62 X 4.69MM. USED IN ELECTRICAL ENGINEERING05.82ChinaHayesYUE COMPLEX SERVICE SOLUTIONS JSC
1/29/20228541290000SEMICONDUCTOR DEVICE: N-CHANNEL MOSFET TRANSISTOR. MAXIMUM POWER DISSIPATION 75 W. DRAIN-SOURCE VOLTAGE 100 V. DIMENSIONS 6.35 X 5.4 X 0.95MM. IS NOT A SCRAP OF ELECTRICAL EQUIPMENT. USED IN ELECTRICAL ENGINEERING0.0425.42ChinaHayesYUE COMPLEX SERVICE SOLUTIONS JSC
1/28/20228541100009SEMICONDUCTOR DEVICE: RECTIFYING DIODE. PEAK REVERSE REPEATED VOLTAGE 600V. MAXIMUM CONTINUOUS FORWARD CURRENT 1A. SIZE 4.75 X 2.95 X 2.2MM. IS NOT A SCRAP OF ELECTRICAL EQUIPMENT. USED IN ELECTRICAL ENGINEERING0.0121.41ChinaHayesYUE COMPLEX SERVICE SOLUTIONS JSC
1/28/20228541290000SEMICONDUCTOR DEVICES: P-CHANNEL MOS TRANSISTOR. MAXIMUM POWER DISSIPATION 4.24 W. DRAIN-SOURCE VOLTAGE -100 V. CONTINUOUS DRAIN CURRENT 4.6A. DIMENSIONS 6.73 X 6.22 X 2.39MM. IS NOT A SCRAP OF ELECTRICAL EQUIPMENT. USED IN ELECTRICAL ENGINEERING0.017.62ChinaHayesYUE COMPLEX SERVICE SOLUTIONS JSC
1/26/20228541290000SEMICONDUCTOR DEVICES: BIPOLAR TRANSISTOR WITH INSULATED GATE. VOLTAGE COLLECTOR-EMMITTER 600V, MAXIMUM CONTINUOUS COLLECTOR CURRENT 30A. MAXIMUM POWER DISPOSION 178W. USED IN ELECTRICAL ENGINEERING0.0112.74ChinaHayesYUE COMPLEX SERVICE SOLUTIONS JSC
1/27/20228541100009DIODE, S10DL SERIES. THE PRODUCT IS A SEMICONDUCTOR DIODE WITH A MAXIMUM REVERSE VOLTAGE OF 200 V. MADE IN A DO-214AB CASE FOR SURFACE MOUNTING. IS NOT A SCRAP OF ELECTRICAL EQUIPMENT. IMPORTED AS0.0113.03ChinaEKATERENBURGPLANAR LLC
1/31/20228541210000BIPOLAR TRANSISTOR BC847CW SEMICONDUCTOR ELEMENT, NPN STRUCTURE, IN SC-70 CASE. MAXIMUM COLLECTOR-EMMITTER VOLTAGE: 45V MAXIMUM COLLECTOR DC CURRENT: 100mA OPERATING FREQUENCY: UP TO 100MHz OPERATING TEMPERATURE: -65:+150C 300000 PCS2.731898.18ChinaSHENZHEN  CHINAIE SiNitsyH Ilya AleksaHdrovich
1/31/20228541210000MOSFET SI2301BDS-T1-E3 SEMICONDUCTOR ELEMENT, NPN STRUCTURE, IN SOT-23-3 CASE. MAXIMUM COLLECTOR-EMMITTER VOLTAGE: 20V MAXIMUM CURRENT: 2.4A OPERATING TEMPERATURE: -55:+150C 2000 PCS0.09203.5ChinaSHENZHEN  CHINAIE SiNitsyH Ilya AleksaHdrovich
1/31/20228541210000FIELD TRANSISTOR 2N7002 N-ch. SEMICONDUCTOR ELEMENT IN SURFACE MOUNTING CASE: SOT-23, USED AS A LOW-POWER KEY TRANSISTOR IN AUTOMOTIVE, INDUSTRIAL AND HOUSEHOLD APPLIANCES. STRUCTURE: N-CHANNEL MAXIMUM VOLTAGE Drain-I0.68135.76ChinaSHENZHEN  CHINAIE SiNitsyH Ilya AleksaHdrovich

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