1/21/2022 | 8541100009 | SEMICONDUCTOR DIODES ARE TWO-ELECTRODE DEVICES WITH ONE PN JUNCTION. ARE NOT LIGHT EMITTING. THEY ARE USED IN THE PRODUCTION OF RADIO EQUIPMENT FOR GENERAL INDUSTRIAL PURPOSE ARE NOT DIODE GROUNDING. MAXIMUM | 3 | 1253.7 | China | MOSCOW RUSSIA | PROMELKOM LLC |
1/28/2022 | 8541100009 | SEMICONDUCTOR DEVICES: TVS DIOD. MAXIMUM LOCKING VOLTAGE 17 V. PEAK PULSE CURRENT 150A. DIMENSIONS 5 X 4 X 1.5MM. USED IN ELECTRICAL ENGINEERING | 0.3 | 669.81 | Philippines | Hayes | YUE COMPLEX SERVICE SOLUTIONS JSC |
1/28/2022 | 8541300009 | SEMICONDUCTOR DEVICE: THYRISTOR MODULE. MAXIMUM REVERSE REPEATED VOLTAGE 1200V. AVERAGE FORWARD CURRENT 60A. SIZE 38.23 X 25.25 X 12.22MM. IS NOT A SCRAP OF ELECTRICAL EQUIPMENT. USED IN ELECTRICAL ENGINEERING | 0.15 | 391.36 | Portugal | Hayes | YUE COMPLEX SERVICE SOLUTIONS JSC |
1/26/2022 | 8541290000 | SEMICONDUCTOR DEVICES: N-CHANNEL MOS TRANSISTOR. MAXIMUM POWER DISSIPATION 96 W. VOLTAGE DRAIN-SOURCE +/-20V. CURRENT 100A. DIMENSIONS 6.1 X 5.35 X 1.1MM. IS NOT A SCRAP OF ELECTRICAL EQUIPMENT. USED IN ELECTRICAL ENGINEERING | 0.01 | 23.54 | Malaysia | Hayes | YUE COMPLEX SERVICE SOLUTIONS JSC |
1/26/2022 | 8541100009 | ADJUSTABLE RESISTIVE DIODE FOR SURFACE MOUNTING - A SEMICONDUCTOR DIODE FOR REGULATION OF RESISTANCE DEPENDING ON THE SUPPLIED DC CURRENT. REVERSE VOLTAGE 600 V, FORWARD VOLTAGE 1 V, MAXIMUM CAPACITY OF THE DIODE 2.2 | 0.24 | 4735.5 | Thailand | PEACHTHREE CITY | DEI SYSTEMS LLC |
1/29/2022 | 8541290000 | SEMICONDUCTOR DEVICE: N-CHANNEL MOSFET TRANSISTOR. MAXIMUM POWER DISSIPATION 216 W. VOLTAGE COLLECTOR-EMMITTER 600 V. IS NOT A SCRAP OF ELECTRICAL EQUIPMENT. USED IN ELECTRICAL ENGINEERING | 0.05 | 44.23 | United States of America | Hayes | YUE COMPLEX SERVICE SOLUTIONS JSC |
1/28/2022 | 8541290000 | SEMICONDUCTOR DEVICES: N-CHANNEL TRANSISTOR. MAXIMUM POWER DISPOSION 110W. VOLTAGE DRAIN-SOURCE 60 V. CURRENT 20A. DIMENSIONS 6.73 X 6.22 X 2.39MM. IS NOT A SCRAP OF ELECTRICAL EQUIPMENT. USED IN ELECTRICAL ENGINEERING | 0.09 | 221.46 | United States of America | Hayes | YUE COMPLEX SERVICE SOLUTIONS JSC |
1/29/2022 | 8541100009 | SEMICONDUCTOR DEVICES: SCHOTTKY DIODE. MAXIMUM REVERSE REPEATED VOLTAGE 650V, CONSTANT FORWARD CURRENT 30A. DIMENSIONS: 10.41 X 15.62 X 4.69MM. USED IN ELECTRICAL ENGINEERING | 0 | 5.82 | China | Hayes | YUE COMPLEX SERVICE SOLUTIONS JSC |
1/29/2022 | 8541290000 | SEMICONDUCTOR DEVICE: N-CHANNEL MOSFET TRANSISTOR. MAXIMUM POWER DISSIPATION 75 W. DRAIN-SOURCE VOLTAGE 100 V. DIMENSIONS 6.35 X 5.4 X 0.95MM. IS NOT A SCRAP OF ELECTRICAL EQUIPMENT. USED IN ELECTRICAL ENGINEERING | 0.04 | 25.42 | China | Hayes | YUE COMPLEX SERVICE SOLUTIONS JSC |
1/28/2022 | 8541100009 | SEMICONDUCTOR DEVICE: RECTIFYING DIODE. PEAK REVERSE REPEATED VOLTAGE 600V. MAXIMUM CONTINUOUS FORWARD CURRENT 1A. SIZE 4.75 X 2.95 X 2.2MM. IS NOT A SCRAP OF ELECTRICAL EQUIPMENT. USED IN ELECTRICAL ENGINEERING | 0.01 | 21.41 | China | Hayes | YUE COMPLEX SERVICE SOLUTIONS JSC |