| 1/28/2022 | 8542326100 | MONOLITHIC INTEGRAL CIRCUIT. USED AS A COMPONENT OF INDUSTRIAL ELECTRONICS. NOT MILITARY USE, DOES NOT CONTAIN ENCRYPTION, NOT SCRAP ELECTRICAL EQUIPMENT. | 4.34 | 4782.88 | United States of America | MOSCOW RUSSIA | TRADING HOUSE SIMMETRON ELECTRONIC COMPONENTS LLC |
| 1/12/2022 | 8542326100 | FLASH-ELECTRICALLY ERASUABLE REPROGRAMMABLE PERMANENT MEMORY DEVICE, THAT IS A MONOLITHIC DIGITAL INTEGRAL CIRCUIT, ASSEMBLED, WITH OUTPUTS, FOR INDUSTRIAL ELECTRONICS SYSTEMS, COMPUTER EQUIPMENT. MEMORY 64MBIT; NAPR | 0.67 | 4256.48 | Philippines | HONG KONG | VEST OST LLC |
| 1/12/2022 | 8542326100 | FLASH-ELECTRICALLY ERASUABLE REPROGRAMMABLE PERMANENT MEMORY DEVICE, THAT IS A MONOLITHIC DIGITAL INTEGRAL CIRCUIT, ASSEMBLED, WITH OUTPUTS, FOR INDUSTRIAL ELECTRONICS SYSTEMS, COMPUTER EQUIPMENT. MEMORY 32MBIT; NAPR | 0.48 | 2894.38 | Taiwan | HONG KONG | VEST OST LLC |
| 1/12/2022 | 8542326100 | FLASH-ELECTRICALLY ERASUABLE REPROGRAMMABLE PERMANENT MEMORY DEVICE, THAT IS A MONOLITHIC DIGITAL INTEGRAL CIRCUIT, ASSEMBLED, WITH OUTPUTS, FOR INDUSTRIAL ELECTRONICS SYSTEMS, COMPUTER EQUIPMENT. MEMORY 4MBIT; DIRECTLY | 0.03 | 49.55 | Japan | HONG KONG | VEST OST LLC |
| 1/20/2022 | 8542326100 | INTEGRATED, MONOLITHIC MICROCIRCUITS, MEMORY, FLASH-ES PROM, MEMORY VOLUME NOT MORE THAN 512 Mbps, WITHOUT FUNCTIONS OF ENCRYPTION (CRYPTOGRAPHY), NOT SCRAP OF ELECTRICAL EQUIPMENT, FOR INDUSTRIAL ASSEMBLY OF SAMSUNG EQUIPMENT | 2.3 | 1483.47 | China | HONG KONG | SAMSUNG ELECTRONICS RUS COMPANY LLC |
| 1/18/2022 | 8542326100 | A FLASH-ES PROM WITH A MEMORY MAXIMUM 512 MB, IS NOT A RADIO ELECTRONIC AND/OR HIGH FREQUENCY DEVICE, NON MILITARY USE, NOT A SCRAP OF ELECTRICAL EQUIPMENT INTENDED FOR INDUSTRIAL ASSEMBLY: SEE APPENDIX | 3.12 | 6423 | China | MOSCOW RUSSIA | DIDZHIKOM LLC |
| 1/18/2022 | 8542326100 | MONOLITHIC INTEGRAL CIRCUIT. USED AS A COMPONENT OF INDUSTRIAL ELECTRONICS. NOT MILITARY USE, DOES NOT CONTAIN ENCRYPTION, NOT SCRAP ELECTRICAL EQUIPMENT. | 17.1 | 18867 | United States of America | MOSCOW RUSSIA | TRADING HOUSE SIMMETRON ELECTRONIC COMPONENTS LLC |
| 1/23/2022 | 8542326100 | INTEGRATED, MONOLITHIC MICROCIRCUITS, MEMORY, FLASH-ES PROM, MEMORY VOLUME NOT MORE THAN 512 Mbps, WITHOUT FUNCTIONS OF ENCRYPTION (CRYPTOGRAPHY), NOT SCRAP OF ELECTRICAL EQUIPMENT, FOR INDUSTRIAL ASSEMBLY OF SAMSUNG EQUIPMENT | 0.54 | 757.22 | Taiwan | TAIPEI AIRPORT TAIWAN | SAMSUNG ELECTRONICS RUS COMPANY LLC |
| 1/23/2022 | 8542326100 | INTEGRATED, MONOLITHIC MICROCIRCUITS, MEMORY, FLASH-ES PROM, MEMORY VOLUME NOT MORE THAN 512 Mbps, WITHOUT FUNCTIONS OF ENCRYPTION (CRYPTOGRAPHY), NOT SCRAP OF ELECTRICAL EQUIPMENT, FOR INDUSTRIAL ASSEMBLY OF SAMSUNG EQUIPMENT | 0.54 | 521.62 | Taiwan | TAIPEI AIRPORT TAIWAN | SAMSUNG ELECTRONICS RUS COMPANY LLC |
| 1/31/2022 | 8542326100 | INTEGRATED MICROCIRCUIT,MONOLITHIC,DIGITAL,MEMORY,FLASH-ES PROM,MEMORY VOLUME NOT MORE THAN 512MBIT, WITHOUT ENCRYPTION FUNCTION (CRYPTOGRAPHY),NOT SCRAP OF ELECTRICAL EQUIPMENT,FOR INDUSTRIAL ASSEMBLY OF SAMSUNG EQUIPMENT | 0.79 | 783.56 | China | HONG KONG | SAMSUNG ELECTRONICS RUS COMPANY LLC |