| 1/12/2022 | 8542326100 | FLASH-ELECTRICALLY ERASUABLE REPROGRAMMABLE PERMANENT MEMORY DEVICE, THAT IS A MONOLITHIC DIGITAL INTEGRAL CIRCUIT, ASSEMBLED, WITH OUTPUTS, FOR INDUSTRIAL ELECTRONICS SYSTEMS, COMPUTER EQUIPMENT. MEMORY 32MBIT; NAPR | 0.48 | 2894.38 | Taiwan | HONG KONG | VEST OST LLC |
| 1/23/2022 | 8542326100 | INTEGRATED, MONOLITHIC MICROCIRCUITS, MEMORY, FLASH-ES PROM, MEMORY VOLUME NOT MORE THAN 512 Mbps, WITHOUT FUNCTIONS OF ENCRYPTION (CRYPTOGRAPHY), NOT SCRAP OF ELECTRICAL EQUIPMENT, FOR INDUSTRIAL ASSEMBLY OF SAMSUNG EQUIPMENT | 0.54 | 757.22 | Taiwan | TAIPEI AIRPORT TAIWAN | SAMSUNG ELECTRONICS RUS COMPANY LLC |
| 1/23/2022 | 8542326100 | INTEGRATED, MONOLITHIC MICROCIRCUITS, MEMORY, FLASH-ES PROM, MEMORY VOLUME NOT MORE THAN 512 Mbps, WITHOUT FUNCTIONS OF ENCRYPTION (CRYPTOGRAPHY), NOT SCRAP OF ELECTRICAL EQUIPMENT, FOR INDUSTRIAL ASSEMBLY OF SAMSUNG EQUIPMENT | 0.54 | 521.62 | Taiwan | TAIPEI AIRPORT TAIWAN | SAMSUNG ELECTRONICS RUS COMPANY LLC |