1/27/2022 | 8542326100 | ELECTRONIC INTEGRAL MONOLITHIC MICROCIRCUIT - STORAGE DEVICE FLASH EEPROM WITH MEMORY 16 MBIT. (OPERATING TEMPERATURE RANGE: -40...+85 C) (NOT HAZARDOUS WASTE) | 0.43 | 869.68 | Philippines | ST PETERSBURG RUSSIA | VOSTOK JSC |
1/21/2022 | 8542326100 | ELECTRONIC INTEGRAL MONOLITHIC MICROCIRCUIT - FLASH EEPROM (NOR) STORAGE DEVICE WITH MEMORY 32 MBIT. (OPERATING TEMPERATURE RANGE: -40...+85 C) (NOT HAZARDOUS WASTE) | 0 | 85.95 | Taiwan | ST PETERSBURG RUSSIA | ALKON ELECTRONICS LLC |
1/6/2022 | 8542326100 | ELECTRONIC INTEGRAL MONOLITHIC MICROCIRCUIT - CONFIGURATION MEMORY (MEMORY FLASH-EEPROM) WITH A MEMORY CAPACITY OF 1.6 MBIT. (OPERATING TEMPERATURE RANGE: 0...+70 C) (NOT HAZARDOUS WASTE) | 0.04 | 78.79 | Philippines | SINGAPORE AIRPORT | SVARNOY LLC |
1/28/2022 | 8542326100 | ELECTRONIC INTEGRAL MONOLITHIC MICROCIRCUIT - A MEMORY DEVICE (FPVM-CONFIGURATION MEMORY) OF THE FLASH-EEPROM TYPE WITH A MEMORY SIZE OF 8 MBIT. (OPERATING TEMPERATURE RANGE: -40...+85 C) (NOT HAZARDOUS WASTE) | 0.06 | 67.02 | Philippines | MANSFIELD CENTER | PM ELECTRONICS LLC |
1/26/2022 | 8542326100 | ELECTRONIC INTEGRAL MONOLITHIC MICROCIRCUIT - CONFIGURATION MEMORY (MEMORY FLASH-EEPROM) WITH A MEMORY CAPACITY OF 1.6 MBIT. (OPERATING TEMPERATURE RANGE: 0...+70 C) (NOT HAZARDOUS WASTE) | 0.07 | 84.48 | Philippines | SINGAPORE AIRPORT | SVARNOY LLC |
1/26/2022 | 8542326100 | ELECTRONIC INTEGRAL MONOLITHIC MICROCIRCUIT - CONFIGURATION MEMORY (MEMORY FLASH-EEPROM) WITH A MEMORY CAPACITY OF 1.6 MBIT. (OPERATING TEMPERATURE RANGE: 0...+70 C) (NOT HAZARDOUS WASTE) | 0.04 | 53.79 | Philippines | SINGAPORE AIRPORT | SVARNOY LLC |
1/26/2022 | 8542326100 | ELECTRONIC INTEGRAL MONOLITHIC MICROCIRCUIT - CONFIGURATION MEMORY (MEMORY FLASH-EEPROM) WITH A MEMORY CAPACITY OF 1.6 MBIT. (OPERATING TEMPERATURE RANGE: 0...+70 C) (NOT HAZARDOUS WASTE) | 0.02 | 48.51 | Philippines | SINGAPORE AIRPORT | SVARNOY LLC |
1/26/2022 | 8542326100 | ELECTRONIC INTEGRAL MONOLITHIC MICROCIRCUIT - FLASH-EEPROM STORAGE DEVICE WITH MEMORY 32 MBIT. (OPERATING TEMPERATURE RANGE: -40...+85 C) (NOT HAZARDOUS WASTE) | 0.01 | 15.42 | Thailand | MANSFIELD CENTER | PM ELECTRONICS LLC |
1/26/2022 | 8542326100 | ELECTRONIC INTEGRAL MONOLITHIC MICROCIRCUIT - FLASH EEPROM (NOR) STORAGE DEVICE WITH MEMORY 32 MBIT. (OPERATING TEMPERATURE RANGE: -40...+85 C) (NOT HAZARDOUS WASTE) | 0.03 | 1169.78 | France | SINGAPORE AIRPORT | SVARNOY LLC |
1/6/2022 | 8542326100 | ELECTRONIC INTEGRAL MONOLITHIC MICROCIRCUIT - MEMORY DEVICE - FLASH EEPROM (PPVM - CONFIGURATION MEMORY) WITH A MEMORY CAPACITY OF 64 MBIT. (OPERATING TEMPERATURE RANGE: -40...+85 C) (NOT HAZARDOUS WASTE) | 0.32 | 1350.74 | Taiwan | SINGAPORE AIRPORT | SVARNOY LLC |